Renesas 71V416S10BEG8

Overview

71V416S10BEG8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is packaged in a 48-ball CABGA (9 mm × 9 mm, BEG48).

For engineers reviewing the 71V416S10BEG8 datasheet, 71V416S10BEG8 pinout, 71V416S10BEG8 application, or 71V416S10BEG8 equivalent, key selection criteria include its 10 ns tAA/tRC timing, BHE/BLE byte enable control, low-Z output enable response (tOLZ = 0 ns), and compatibility with high-speed microprocessor and FPGA memory interfaces requiring deterministic asynchronous access.

Technical Context

The 71V416S10BEG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual-byte enable (BHE/BLE) for independent high- and low-byte access. Its address decoding supports 18-bit addressing (A0–A17) to select one of 256K words.

It features separate chip select (CS), output enable (OE), and write enable (WE) controls with overlapping timing support for CS-, WE-, or byte-enable-controlled write cycles. All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and operate at 3.3 V ±10%.

Key Specifications

Pinout & Package

71V416S10BEG8 is housed in a 48-ball fine-pitch CABGA package (BEG48), 9 mm × 9 mm, 0.8 mm ball pitch, with balls arranged in an 8×6 array plus two corner NC positions. Pin 28 may be left unconnected or tied to VSS per design flexibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62167EV30LL-10ZSXI and IS61LV25616AL-10TLI, the 71V416S10BEG8 uniquely combines CABGA miniaturization, JEDEC-compliant low-noise pinout, and true byte-enable control - making it optimal for space-constrained, high-integrity memory interfaces where layout efficiency and signal integrity are critical.

Availability

71V416S10BEG8 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, FPGA configuration caches, medical imaging frame stores, and automotive ADAS preprocessing buffers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for 71V416S10BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with over 40 years of memory design heritage.

The 71V416S series targets high-speed, low-latency memory needs in resource-constrained embedded systems where deterministic asynchronous access, small footprint, and LVTTL compatibility are essential - especially in legacy bus architectures and FPGA co-processor subsystems.

FAQ

What is the maximum operating frequency supported by the 71V416S10BEG8?

The 71V416S10BEG8 does not use a clock, so it has no "operating frequency" in the synchronous sense. Its 10 ns access and cycle times support effective bus rates up to 100 MHz in asynchronous interfaces. For example, with tRC = 10 ns, consecutive random reads can occur every 10 ns, yielding a theoretical peak throughput of 100 million 16-bit words per second. The 71V416S10BEG8 achieves this without clocks, refresh, or wait states.

Does the 71V416S10BEG8 require external pull-up resistors on its control pins?

No, the 71V416S10BEG8 does not require external pull-ups on CS, OE, WE, BHE, or BLE. Its inputs are TTL-compatible with defined VIH (≥2.0 V) and VIL (≤0.8 V) thresholds and have negligible input leakage (|ILI| ≤ 5 µA). Pull-ups are only needed if system-level noise immunity or default-high idle states are required - not for basic functionality. The 71V416S10BEG8 operates correctly with clean, actively driven control signals.

Can the 71V416S10BEG8 be used in industrial temperature applications?

No - the 71V416S10BEG8 is specified only for the commercial temperature range (0°C to +70°C). For industrial operation (–40°C to +85°C), Renesas offers the 71V416S10BEGI8 variant. The 71V416S10BEG8's datasheet explicitly lists "C" grade in ordering information and confirms commercial-only qualification. Using the 71V416S10BEG8 outside 0°C–70°C voids parametric guarantees and may result in timing violations or data retention failure.

What is the purpose of the NC pins on the 71V416S10BEG8 BGA package?

The 71V416S10BEG8 has eight NC (No Connect) pins: A1, A2, B1, B2, C1, G1, H1, and H2. These pins are internally unconnected and must remain unconnected on the PCB - neither tied high nor low. They exist for mechanical symmetry, future die revision compatibility, or test structure isolation. Connecting them risks latch-up or undefined behavior. The 71V416S10BEG8 datasheet mandates leaving all NC pins floating per reliability and functional requirements.

How does the 71V416S10BEG8 handle simultaneous read and write operations?

The 71V416S10BEG8 does not support true simultaneous read/write - it is a single-port SRAM. However, its fast OE deassertion (tOHZ = 7 ns) and WE-controlled write timing allow tightly interleaved access. For example, a read can complete, OE goes high, then WE goes low for a write within ~15 ns. This pseudo-concurrent behavior is sufficient for many buffering applications. True dual-port operation requires a different device; the 71V416S10BEG8 relies on external arbitration for shared bus access.