Renesas 71V416S10PHG

Overview

71V416S10PHG from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It serves as a fast, asynchronous memory buffer in embedded controllers, network interface cards, and real-time data acquisition systems.

For engineers reviewing the 71V416S10PHG datasheet, 71V416S10PHG pinout, 71V416S10PHG application, or 71V416S10PHG equivalent, key selection criteria include its 10 ns read cycle time, byte-enable architecture for partial-word access, low-impedance output drivers enabling direct LVTTL bus interfacing, and TSOP Type II packaging suitable for space-constrained PCB layouts.

Technical Context

The 71V416S10PHG implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual byte enable (BHE/ BLE) to support independent high- and low-byte writes. Its address decoding includes 18-bit addressing (A0–A17) for full 256K-word coverage.

It features three independent control paths: chip-select (CS)-driven, output-enable (OE)-driven, and byte-enable (BHE/ BLE)-driven timing, each with guaranteed propagation delays (e.g., tCLZ ≤ 4 ns, tOE ≤ 5 ns), enabling flexible integration into multi-bus or burst-capable systems without external wait-state generation.

Key Specifications

Pinout & Package

71V416S10PHG is housed in a 44-pin, 400-mil TSOP Type II package (PHG44) with JEDEC-standard center-power/ground pinout to minimize simultaneous switching noise. Pin assignments are identical to the SOJ variant (PBG44) and validated for drop-in compatibility across both packages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with CY62167EV30LL-10ZSXIT and AS6C4008-10TIN, the 71V416S10PHG uniquely delivers JEDEC-compliant noise-reducing pinout, true dual-byte enable control, and verified 10 ns performance across commercial temperature range - making it optimal for noise-sensitive, timing-critical embedded memory subsystems where layout efficiency and deterministic timing are prioritized over raw density or lowest unit cost.

Availability

71V416S10PHG is available at Aetrix Electronics and suitable for network interface cards, FPGA configuration systems, industrial PLCs, and DSP-based signal processing equipment requiring stable component supply and long-term obsolescence management.

Supply support for 71V416S10PHG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416S10PHG belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered specifically for deterministic, zero-refresh memory interfacing in real-time embedded systems where timing predictability and bus noise immunity are critical.

FAQ

What is the maximum clock frequency supported by the 71V416S10PHG?

The 71V416S10PHG is a fully static asynchronous SRAM and does not use a clock signal. Its 10 ns access time enables reliable operation with microprocessors or FPGAs running external bus frequencies up to 100 MHz, provided address and control setup/hold times are met. The 71V416S10PHG datasheet specifies tRC = 10 ns, meaning one complete read or write cycle can occur every 10 ns without external synchronization.

Does the 71V416S10PHG support partial-word writes without external logic?

Yes. The 71V416S10PHG includes dedicated BHE (high byte enable) and BLE (low byte enable) inputs that allow independent 8-bit writes to I/O8–I/O15 or I/O0–I/O7 respectively. When one byte enable is asserted low and the other is high, only the selected byte is written; the unselected byte remains unchanged. This functionality is implemented internally and requires no external gates or glue logic.

Is the 71V416S10PHG pin-compatible with the 71V416S12PHG or 71V416S15PHG?

Yes - all speed grades (10 ns, 12 ns, 15 ns) within the 71V416S PHG family share identical pinout, package dimensions, voltage requirements, and functional behavior. The only difference is AC timing parameters; slower variants may be substituted in designs originally specifying 71V416S10PHG if timing margins permit, but the 71V416S10PHG cannot be replaced with a faster variant without verifying system-level timing closure.

What is the purpose of the center-placed VDD and VSS pins on the 71V416S10PHG TSOP package?

The JEDEC-standard center power/ground pinout (VDD on pin 13, VSS on pin 12) minimizes simultaneous switching output (SSO) noise by shortening high-frequency return current paths and balancing inductance across the package. This layout significantly reduces ground bounce and supply rail disturbance during fast I/O transitions - a key requirement for stable operation in mixed-signal or high-density digital systems using the 71V416S10PHG.

Can the 71V416S10PHG operate with a 2.5 V supply?

No. The 71V416S10PHG is specified only for 3.0–3.6 V operation per its DC Electrical Characteristics table. VIH minimum is 2.0 V, but VDD must be ≥3.0 V to guarantee correct internal biasing, timing, and output drive strength. Operating below 3.0 V risks data corruption, increased access time, or failure to meet tOH/tOLZ specifications - the 71V416S10PHG is not rated for 2.5 V or dual-supply operation.