Renesas 71V416S10PHG8

Overview

71V416S10PHG8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is used in embedded controllers, networking buffers, and real-time data acquisition systems requiring deterministic, clockless memory access.

For engineers reviewing the 71V416S10PHG8 datasheet, 71V416S10PHG8 pinout, 71V416S10PHG8 application, or 71V416S10PHG8 equivalent, key selection criteria include its 10 ns tAA/tACS timing, dual byte enable (BHE/BLE), 44-pin TSOP Type II package, and low-impedance output drive capability under 3.3 V LVTTL logic levels.

Technical Context

The 71V416S10PHG8 employs fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic memory access. Its architecture integrates separate high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) write buffers with independent BHE and BLE controls, enabling partial-word writes without bus contention.

Timing is governed by three independent control paths: chip-select–driven (tACS), output-enable–driven (tOE), and byte-enable–driven (tBE), all guaranteed at ≤10 ns for the S10 speed grade. The device features bidirectional LVTTL-compatible I/Os with VOH ≥2.4 V (IOH = −4 mA) and VOL ≤0.4 V (IOL = 8 mA) under minimum VDD.

Key Specifications

Pinout & Package

71V416S10PHG8 is supplied in a 44-pin, 400-mil plastic TSOP Type II package (PHG44) with JEDEC-standard center-power/ground pinout to minimize simultaneous switching noise. Pin 1 is located at the top-left corner of the top view, with pins numbered counter-clockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Compared with CY62167EV30LL-10ZSXIT and AS6C4008-10TIN, the 71V416S10PHG8 uniquely combines commercial-temp 10 ns performance, JEDEC-compliant 44-pin TSOP II footprint, and native BHE/BLE support-enabling drop-in replacement in legacy Renesas SH/RZ designs without layout or firmware changes.

Availability

71V416S10PHG8 is available at Aetrix Electronics and suitable for industrial HMI, network packet buffering, FPGA co-processor caching, real-time data acquisition, and embedded controller memory expansion requiring stable component supply across multi-year production cycles.

Supply support for 71V416S10PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The 71V416S10PHG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered for deterministic, low-latency memory access in resource-constrained embedded systems where asynchronous operation and LVTTL compatibility are critical.

FAQ

What is the maximum operating frequency supported by the 71V416S10PHG8?

The 71V416S10PHG8 does not operate on a clock signal-it is an asynchronous SRAM. Its maximum effective throughput is determined by its 10 ns read cycle time (tRC), enabling up to 100 million 16-bit words per second in continuous burst mode. This translates to 200 MB/s bandwidth when interfaced with a 16-bit bus running at optimal timing margins.

Does the 71V416S10PHG8 require refresh circuitry or external clocks?

No. The 71V416S10PHG8 is a fully static RAM using CMOS latch-based memory cells. It requires no refresh cycles, clocks, or periodic access to retain data-making it ideal for battery-backed applications and systems with irregular memory access patterns such as diagnostic loggers and safety-critical controllers.

Can the 71V416S10PHG8 be used with 5 V logic systems?

No. The 71V416S10PHG8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic will exceed voltage ratings and cause permanent damage. Level translation (e.g., TXB0108 or 74LVC4245) is mandatory for interfacing with 5 V microcontrollers.

What is the function of the NC pins on the 71V416S10PHG8 TSOP package?

The 71V416S10PHG8 TSOP package has no NC (No Connect) pins. All 44 pins are assigned functions per the official Renesas pinout diagram: pins 1–22 and 23–44 are fully utilized for address, control, data, power, and ground. Any reference to NC in BGA variants (e.g., BE48) does not apply to the PHG44 TSOP variant.

How does the 71V416S10PHG8 handle partial-word writes without corrupting adjacent data?

The 71V416S10PHG8 uses dedicated BHE (high-byte enable) and BLE (low-byte enable) inputs to gate write operations to I/O8–I/O15 or I/O0–I/O7 independently. When only BHE is asserted low (and BLE high), only the upper byte is written; conversely, only BLE low writes the lower byte. This hardware-level byte masking prevents unintended modification of unselected bytes during partial writes.