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Renesas 71V416S10PHGI
- Part No.:
- 71V416S10PHGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
71V416S10PHGI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:305
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Product details
Overview
71V416S10PHGI from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory control in embedded controllers and data acquisition systems.
For engineers reviewing the 71V416S10PHGI datasheet, 71V416S10PHGI pinout, 71V416S10PHGI application, or 71V416S10PHGI equivalent, key selection criteria include its TSOP Type II package, 10 ns read cycle time, JEDEC-compliant center power/ground pinout, and support for high-speed word/byte-level reads and writes without refresh.
Technical Context
The 71V416S10PHGI uses fully static asynchronous circuitry-no clocks or refresh required-and integrates independent high- and low-byte write buffers with dedicated BHE and BLE inputs. Its address decoding supports full 18-bit addressing (A0–A17) for 256K-word access, and all timing parameters-including tAA (10 ns), tRC (10 ns), and tOE (5 ns)-are guaranteed over the industrial temperature range.
Operation relies on three independent control paths: CS-driven selection, OE-gated output enable, and WE-synchronized write latching. Byte enables allow partial writes without disturbing adjacent bytes, while the JEDEC-standard SOJ/TSOP pinout minimizes simultaneous switching noise via center-placed VDD/VSS pins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) |
| Access Time (tAA) | 10 ns - guarantees data valid within 10 ns of stable address and CS/OE assertion |
| Read Cycle Time (tRC) | 10 ns - enables maximum 100 MHz burst read throughput |
| Supply Voltage | 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of ±10% variation |
| I/O Interface | LVTTL-compatible - ensures direct interfacing with 3.3 V microcontrollers and FPGAs without level shifters |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded and automotive under-hood applications |
| Power Dissipation (Active) | 200 mA ICC (max) at fMAX - enables predictable thermal design in dense PCB layouts |
| Standby Current (ISB1) | 20 mA (max) - supports low-power sleep modes in battery-backed or energy-sensitive systems |
Pinout & Package
71V416S10PHGI is packaged in a 44-pin, 400-mil TSOP Type II (PHG44) with JEDEC-standard center power/ground pinout to reduce ground bounce and supply noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| CS | Chip Select | Active-low global enable; device enters standby (high-Z I/O, low ISB) when deasserted |
| OE | Output Enable | Active-low control for output drivers; allows shared bus operation with other devices |
| WE | Write Enable | Active-low write strobe; latches data on I/O0–I/O15 during CS/BHE/BLE assertion |
| BHE, BLE | Byte Enable | Independent high- and low-byte write controls; enables 8-bit partial writes without read-modify-write |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path for lower byte; driven only when BLE = L and CS = L |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path for upper byte; driven only when BHE = L and CS = L |
| VDD | Power Supply | 3.3 V core and I/O supply; two pins (pins 12 and 33) placed centrally per JEDEC for low-impedance decoupling |
| VSS | Ground | Ground reference; two pins (pins 11 and 34) symmetrically placed with VDD to minimize loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by minimizing power/ground loop inductance in high-speed bus environments |
| Separate Byte Enables (BHE/BLE) | Enables true 8-bit write granularity-critical for legacy 8-bit peripherals and mixed-width system buses |
| 5 ns Output Enable Propagation (tOE) | Supports tight timing margins in real-time control loops where memory latency directly impacts response time |
| 10 ns Address Access (tAA) | Meets timing requirements of 100 MHz CPU buses without wait states in synchronous interface configurations |
| Single 3.3 V Supply Operation | Eliminates need for dual-voltage regulators, simplifying power architecture in space-constrained designs |
| Industrial Temperature Range (–40°C to +85°C) | Validated for deployment in factory automation PLCs, motor drives, and outdoor communications equipment |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Data FIFO |
|---|---|
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer providing zero-wait-state access for deterministic scan-cycle execution. Use Value: 10 ns tAA ensures sub-microsecond memory access, enabling <100 µs PLC scan cycles even with large tag databases. | Use Scenario: Temporary storage of raw pixel data between image sensor capture and FPGA-based compression in portable ultrasound units. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer supporting burst transfers at up to 100 MB/s. Use Value: Bidirectional LVTTL I/O and byte enables allow seamless handshake-free integration with image sensor parallel outputs and FPGA DMA controllers. |
| Avionics Display Controller Cache | Test Equipment Pattern Generator |
Use Scenario: Caching display list instructions and glyph bitmaps in ruggedized cockpit displays requiring EMI resilience and thermal stability. IC Role / Device Role / Timing Role: Non-refreshing static RAM serving as deterministic instruction/data cache for real-time graphics rendering engines. Use Value: JEDEC center VDD/VSS pinout suppresses ground bounce during rapid pixel updates, preventing display artifacts in safety-critical UIs. | Use Scenario: Holding stimulus patterns and expected response vectors in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-reliability, fast-access memory storing multi-megabit test sequences with precise timing alignment. Use Value: 10 ns tRC and tAA guarantee nanosecond-accurate pattern delivery synchronized to ATE clock domains without pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXIT | 16 Mbit (1M × 16), 10 ns, 3.3 V, TSOP-44 - higher density but larger footprint and higher ICC (250 mA) | Used where longer pattern storage or deeper FIFO depth is required; not drop-in due to different pinout and address width | Select when >4 Mbit capacity is needed and board layout accommodates larger die size and thermal load |
| AS6C4008-10TIN | 4 Mbit (256K × 16), 10 ns, 3.3 V, TSOP-44 - identical density/timing but lower ISB1 (5 µA vs. 20 mA) and no BHE/BLE pins | Suitable for simpler systems without byte-level write control; lacks industrial temp grade (only commercial 0°C to +70°C) | Choose for cost-sensitive commercial applications where full industrial qualification and byte enables are unnecessary |
Compared with CY62167EV30LL-10ZSXIT and AS6C4008-10TIN, the 71V416S10PHGI uniquely balances industrial temperature rating, JEDEC-compliant noise-reduction pinout, and dedicated byte enables-making it optimal for deterministic real-time systems where reliability, EMI robustness, and partial-write capability are non-negotiable.
Availability
71V416S10PHGI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics display controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V416S10PHGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V416S10PHGI belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered specifically for deterministic, low-latency memory buffering in real-time industrial and communications systems where asynchronous operation and noise immunity are critical.
FAQ
What is the maximum operating frequency supported by the 71V416S10PHGI?
The 71V416S10PHGI does not use a clock signal-it is an asynchronous SRAM. Its maximum effective throughput is determined by its 10 ns read cycle time (tRC), enabling up to 100 million operations per second in burst mode. Timing is governed by address setup/hold and control signal propagation delays-not a system clock.
Does the 71V416S10PHGI require external refresh circuitry?
No, the 71V416S10PHGI is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and CS remains asserted, making it ideal for systems with strict determinism requirements.
Can the 71V416S10PHGI be used with 5 V logic interfaces?
No-the 71V416S10PHGI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic will exceed voltage ratings and risk damage; level translation is mandatory for mixed-voltage systems.
What is the function of the NC pins on the 71V416S10PHGI TSOP package?
The 71V416S10PHGI TSOP package has one NC pin (pin 23, labeled "NC(1)" in the datasheet). It is not internally connected and must remain unconnected-no pull-up, pull-down, or routing is permitted. This pin exists for mechanical compatibility and package symmetry, not functional use.
How does the 71V416S10PHGI handle simultaneous access conflicts between byte and word operations?
There are no internal conflicts-the 71V416S10PHGI resolves byte vs. word access entirely through external control: asserting both BHE and BLE low enables full 16-bit word access, while asserting only one enables corresponding 8-bit access. The memory array responds atomically to the enabled byte lanes, with no arbitration logic or internal contention.
71V416S10PHGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
71V416S10PHGI FAQ
1.How can I place an order for 71V416S10PHGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416S10PHGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416S10PHGI reliable?
The price and inventory of 71V416S10PHGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S10PHGI is usually 5 days.
3.What payment methods are accepted for 71V416S10PHGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S10PHGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416S10PHGI?
71V416S10PHGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416S10PHGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416S10PHGI?
For technical support, including 71V416S10PHGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S10PHGI requirements.
6.How does Aetrix verify that 71V416S10PHGI is sourced from the original manufacturer or authorized distributors?
All 71V416S10PHGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S10PHGI meets industry standards.
7.What is the process for return or replacement of 71V416S10PHGI?
All 71V416S10PHGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S10PHGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416S10PHGI part is unused and in its original packaging.
Return procedure for 71V416S10PHGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416S10PHGI Tags
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