Renesas 71V416S12BE

Overview

71V416S12BE from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and is used in embedded controllers, networking buffers, and industrial PLC memory subsystems.

For engineers reviewing the 71V416S12BE datasheet, 71V416S12BE pinout, 71V416S12BE application, or 71V416S12BE equivalent, key selection criteria include 12 ns read cycle timing, 48-ball CABGA (9 mm × 9 mm) package compatibility, byte-enable functionality, and commercial temperature range (0°C to +70°C) operation.

Technical Context

The 71V416S12BE implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS process technology. Its dual-byte enable (BHE/BLE) and output enable (OE) pins enable selective 8-bit or 16-bit data transfers with tBE = 5 ns and tOE = 6 ns.

It features JEDEC-compliant center-power/ground pinout for noise reduction, bidirectional LVTTL-compatible I/Os, and three package options-though the BE suffix confirms this variant is the 48-ball CABGA (BE48). The device supports CS-controlled, OE-controlled, and byte-enable-controlled write cycles per AC timing diagrams.

Key Specifications

Pinout & Package

71V416S12BE is packaged in a 48-ball fine-pitch CABGA (BE48), 9 mm × 9 mm, with 0.8 mm ball pitch. Pin mapping follows the BE48 mechanical layout defined in Renesas documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Compared with CY62167EV30LL-45ZSXI and IS61LV25616AL-12MLI, the 71V416S12BE offers superior noise immunity via center-power/ground layout and native CABGA packaging for better thermal performance-making it optimal for dense, high-reliability industrial layouts where signal integrity and thermal management are critical.

Availability

71V416S12BE is available at Aetrix Electronics and suitable for industrial PLC data buffering, networking packet buffering, and medical imaging frame store applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for 71V416S12BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The 71V416S12BE belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and LVTTL compatibility are essential.

FAQ

What is the operating voltage range for the 71V416S12BE?

The 71V416S12BE operates from 3.0 V to 3.6 V, with 3.3 V as the nominal supply. This single-supply requirement simplifies power design and ensures compatibility with LVTTL logic families. DC electrical characteristics-including VOH, VOL, and leakage currents-are fully specified across this range under commercial temperature conditions (0°C to +70°C). The 71V416S12BE does not support 5 V or mixed-voltage operation.

Does the 71V416S12BE require refresh circuitry or clock signals?

No, the 71V416S12BE is a fully static asynchronous SRAM and requires neither refresh cycles nor clock inputs. Its internal circuitry maintains data indefinitely as long as VDD is applied and CS remains deasserted during standby. This eliminates timing overhead and makes the 71V416S12BE ideal for deterministic real-time systems such as industrial controllers and test equipment where predictability is critical.

What package type does the 71V416S12BE use, and what are its mechanical dimensions?

The 71V416S12BE uses a 48-ball CABGA package (BE48) with 0.8 mm ball pitch and overall dimensions of 9 mm × 9 mm. It is distinct from the SOJ and TSOP variants in the same family. The BE48 footprint provides improved thermal dissipation and reduced trace inductance compared to leaded packages, and its pinout is documented in Renesas' BE48 mechanical drawing referenced in the 71V416S12BE datasheet.

How does byte enable functionality work on the 71V416S12BE?

The 71V416S12BE implements independent high-byte (BHE) and low-byte (BLE) enables, both active-low. When only BHE is asserted, I/O8–I/O15 are driven or latched; when only BLE is asserted, I/O0–I/O7 are active. Both asserted enables full 16-bit operation. This allows true 8-bit sub-word access without external gating logic-directly supporting legacy 8-bit bus protocols and partial-word updates in the 71V416S12BE's memory array.

Is the 71V416S12BE pin-compatible with other speed grades in the 71V416 family?

Yes, all 71V416S and 71V416L variants-including 71V416S10BE, 71V416S12BE, and 71V416S15BE-share identical BE48 pinouts and ball assignments. Speed grade differences (10/12/15 ns) affect only internal timing parameters and do not alter electrical interface behavior or physical connectivity. This allows drop-in replacement during prototyping or yield optimization without PCB revision, provided thermal and signal integrity margins accommodate the selected speed grade's current profile.