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Renesas 71V416S12BEG
- Part No.:
- 71V416S12BEG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416S12BEG.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,643
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Product details
Overview
71V416S12BEG from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is packaged in a 48-ball BGA (BEG48, 9 mm × 9 mm).
For engineers reviewing the 71V416S12BEG datasheet, 71V416S12BEG pinout, 71V416S12BEG application, or 71V416S12BEG equivalent, key selection criteria include its 12 ns tAA/tRC timing, dual-byte enable architecture, low-Z output enable response (tOE = 6 ns), and compatibility with high-density embedded memory interfaces requiring deterministic asynchronous access.
Technical Context
The 71V416S12BEG implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for stable operation across voltage (3.0–3.6 V) and temperature (0°C to +70°C). Its address decoding, sense amplifiers, and write drivers are integrated into a single die with separate high- and low-byte I/O paths.
It features three independent control paths: chip-select (CS)-driven, output-enable (OE)-driven, and byte-enable (BHE/BLE)-driven timing, enabling flexible bus interface configurations including partial-word writes and fast output disable (tOHZ = 6 ns, tCHZ = 6 ns). All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and drive LVTTL loads directly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16), supporting 16-bit parallel data bus interfacing |
| Access Time (tAA) | 12 ns maximum - guarantees valid data at I/O pins within 12 ns of stable address and CS assertion |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V system rails without level-shifting |
| I/O Interface | LVTTL-compatible - directly interfaces with 3.3 V microcontrollers, FPGAs, and ASICs without external buffers |
| Byte Enable Pins | BHE and BLE support independent 8-bit writes - enables efficient partial-word updates without read-modify-write cycles |
| Output Disable Time | tOHZ = 6 ns - ensures rapid bus release for multi-master or shared-memory arbitration |
| Standby Current | ISB = 60 mA max (dynamic), ISB1 = 20 mA max (static) - enables low-power idle states in battery-sensitive systems |
Pinout & Package
71V416S12BEG is housed in a 48-ball fine-pitch BGA package (BEG48, 9 mm × 9 mm, 0.8 mm pitch) with ball grid layout matching JEDEC MO-245AC. Pin functions follow standardized memory interface conventions, with dedicated address, data, and control balls arranged to minimize signal skew and crosstalk.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal latching - requires stable address during CS low |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path enabled only when BLE = L; high-impedance when disabled |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path enabled only when BHE = L; isolated from low byte during partial writes |
| CS | Chip Select | Primary device enable - all internal operations gated by CS; deassertion places outputs in high-Z |
| OE | Output Enable | Controls output drivers independently of CS - allows fast read gating without toggling CS |
| WE | Write Enable | Active-low write strobe - initiates write cycle when CS and BHE/BLE are asserted concurrently |
| BHE / BLE | Byte Enable Inputs | Independent 8-bit write controls - enables true byte-selective writes without external logic |
| VDD | Power Supply | Single 3.3 V supply input - multiple VDD balls distributed across package for low-impedance power delivery |
| VSS | Ground | Multiple ground balls placed adjacent to VDD and I/O for minimized loop inductance and noise suppression |
| NC | No Connect | Ball 28 is NC or optionally tied to VSS per design - not electrically connected to die |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS across the BGA array |
| Equal Access & Cycle Times | tAA = tRC = 12 ns - simplifies timing budgeting in synchronous and asynchronous bus designs |
| Fast Output Enable Response | tOE = 6 ns - supports high-throughput burst reads in real-time control applications |
| Low-Power Standby Mode | ISB1 = 20 mA max (static) - maintains data retention while minimizing quiescent current |
| Byte-Wide Write Capability | Dual BHE/BLE pins allow independent 8-bit writes - eliminates need for external byte-mask logic |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Storing real-time I/O status and control registers in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly with ARM Cortex-M7 MCU's external memory bus. Use Value: 12 ns tAA ensures register updates complete within tight 100 µs scan windows; byte enables reduce bus contention during partial configuration writes. | Use Scenario: Holding uncompressed grayscale image frames (1024×768 @ 16 bpp) during preprocessing in portable ultrasound units. IC Role / Device Role / Timing Role: High-bandwidth frame buffer accessed by FPGA-based image pipeline with burst-capable read/write control. Use Value: 48-ball BGA footprint minimizes PCB area vs. SOJ/TSOP; tOHZ = 6 ns enables rapid bus handoff between acquisition and processing engines. |
| Avionics Data Logger | Test Equipment Pattern Memory |
Use Scenario: Capturing sensor telemetry at 1 MS/s in DO-254-compliant flight data recorders with extended temperature tolerance. IC Role / Device Role / Timing Role: Non-refreshing memory node in radiation-tolerant memory subsystem using triple-module redundancy. Use Value: Fully static operation eliminates refresh overhead; commercial-grade 71V416S12BEG meets -40°C to +85°C industrial variant requirements via qualification testing. | Use Scenario: Storing digital stimulus/response vectors in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-speed pattern memory accessed by high-frequency pattern generator ASIC with precise setup/hold timing. Use Value: tAS = 0 ns and tDH = 0 ns simplify timing closure; LVTTL I/O eliminates level translation between ASIC and memory. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16, 45 ns access, 3.3 V, TSOP-48 - slower but higher density and wider availability | Suitable for non-real-time buffering where latency < 45 ns is acceptable | Select when board space permits larger TSOP and timing margin > 33 ns is available |
| AS6C4008-12TIN | 256K × 16, 12 ns access, 3.3 V, TSOP-44 - same speed/density but different package and JEDEC pinout | Requires PCB redesign due to SOJ/TSOP footprint and non-center-power layout | Choose only if legacy TSOP routing exists and BGA rework is not feasible |
Compared with CY62167EV30LL-45ZSXIT and AS6C4008-12TIN, the 71V416S12BEG delivers identical 12 ns timing in a compact BGA with superior noise immunity via center-power pinout-critical for mixed-signal avionics and medical systems where signal integrity outweighs package familiarity.
Availability
71V416S12BEG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, and ATE pattern memories requiring stable component supply, long-lifecycle support, and RoHS-compliant green packaging.
Supply support for 71V416S12BEG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT71V416 family-including 71V416S12BEG-is designed for high-reliability, high-speed parallel memory interfacing in resource-constrained embedded systems where deterministic timing and low-power standby are essential.
FAQ
What is the operating temperature range for the 71V416S12BEG?
The 71V416S12BEG is rated for commercial temperature operation from 0°C to +70°C. While the broader IDT71V416 family includes industrial-grade variants (e.g., 71V416S12BEGI), this specific orderable part number-71V416S12BEG-carries the 'C' temperature grade per Renesas' ordering information table. It is not qualified for –40°C to +85°C operation unless explicitly marked with an 'I' suffix.
Does the 71V416S12BEG require external refresh circuitry?
No, the 71V416S12BEG is a fully static RAM and requires no refresh cycles or clocks. Its asynchronous architecture retains data indefinitely as long as VDD is maintained within 3.0–3.6 V and ambient temperature remains within 0°C to +70°C. This eliminates refresh-related timing constraints and controller overhead in microcontroller or FPGA-based systems.
Can the 71V416S12BEG be used with 5 V logic interfaces?
No, the 71V416S12BEG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V-making it incompatible with standard 5 V TTL or CMOS logic levels. Interfacing with 5 V systems requires level-shifting circuitry; direct connection risks damage or unreliable operation.
What is the function of the NC ball on the 71V416S12BEG BGA package?
Ball 28 on the 71V416S12BEG (BEG48) package is designated NC (No Connect) and may be left unconnected or tied to VSS per board-level design requirements. Renesas documentation confirms it is not electrically bonded to the die, and connecting it to ground does not affect functionality but may aid in thermal or mechanical stability.
How does the byte enable architecture of the 71V416S12BEG improve system efficiency?
The 71V416S12BEG's independent BHE and BLE pins enable true 8-bit write operations without read-modify-write sequences. When only the low byte (I/O0–I/O7) must be updated, asserting BLE = L and BHE = H writes exclusively to those bits-preserving high-byte contents and reducing bus traffic, power consumption, and CPU overhead in protocol stack or configuration register handling.
71V416S12BEG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416S12BEG FAQ
1.How can I place an order for 71V416S12BEG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416S12BEG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416S12BEG reliable?
The price and inventory of 71V416S12BEG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S12BEG is usually 5 days.
3.What payment methods are accepted for 71V416S12BEG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S12BEG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416S12BEG?
71V416S12BEG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416S12BEG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416S12BEG?
For technical support, including 71V416S12BEG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S12BEG requirements.
6.How does Aetrix verify that 71V416S12BEG is sourced from the original manufacturer or authorized distributors?
All 71V416S12BEG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S12BEG meets industry standards.
7.What is the process for return or replacement of 71V416S12BEG?
All 71V416S12BEG units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S12BEG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416S12BEG part is unused and in its original packaging.
Return procedure for 71V416S12BEG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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