Renesas 71V416S12BEG8

Overview

71V416S12BEG8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and is used in embedded controllers, network interface buffers, and real-time data acquisition systems.

For engineers reviewing the 71V416S12BEG8 datasheet, 71V416S12BEG8 pinout, 71V416S12BEG8 application, or 71V416S12BEG8 equivalent, key selection criteria include 12 ns read cycle time, 48-ball BGA (9 mm × 9 mm) package compatibility, industrial temperature range support (–40°C to +85°C), and low-power standby current of 60 mA (max) under dynamic conditions.

Technical Context

The 71V416S12BEG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture (BHE/BLE) enables independent high- and low-byte access without external logic, while the OE-controlled output buffer delivers 5 ns output enable delay.

Address decoding is handled by integrated row/column decoders driving a 4,194,304-bit memory array. All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), and outputs drive ±4 mA/±8 mA loads at VOH ≥ 2.4 V and VOL ≤ 0.4 V under min VDD.

Key Specifications

Pinout & Package

71V416S12BEG8 is packaged in a 48-ball fine-pitch BGA (BEG48), 9 mm × 9 mm body, 0.8 mm ball pitch, RoHS-compliant green variant. Pin 28 is NC or optionally connected to VSS per design flexibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with CY62167EV30LL-45ZSXIT and AS6C4008-12TIN, the 71V416S12BEG8 uniquely combines 12 ns performance with a compact 48-ball BGA and industrial temperature qualification-enabling higher-density routing and extended environmental reliability where space and thermal margin are constrained.

Availability

71V416S12BEG8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, and avionics applications requiring stable component supply across extended product lifecycles.

Supply support for 71V416S12BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416S12BEG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and industrial-grade reliability are mandatory.

FAQ

What is the operating temperature range for the 71V416S12BEG8?

The 71V416S12BEG8 is rated for industrial operation from –40°C to +85°C. This specification is verified per Renesas' qualification testing and applies to all AC and DC parameters in the datasheet under recommended supply voltage (3.0 V to 3.6 V) and load conditions. The 71V416S12BEG8 maintains full 12 ns access time and functional integrity across this full range without derating.

Does the 71V416S12BEG8 require a refresh circuit?

No, the 71V416S12BEG8 is a fully static RAM and requires no refresh circuitry or external clock. Its asynchronous design uses only CS, WE, OE, and address transitions to control read/write operations. This eliminates refresh overhead in microcontroller or FPGA-based systems and guarantees data retention as long as VDD remains within specification and CS is held high during standby.

What package type does the 71V416S12BEG8 use?

The 71V416S12BEG8 uses a 48-ball fine-pitch BGA package (BEG48) with 9 mm × 9 mm body size and 0.8 mm ball pitch. Pin 28 is designated NC but may be connected to VSS per layout requirements. This package supports high-density PCB routing and meets JEDEC MO-270AB mechanical standards.

Can the 71V416S12BEG8 operate with 2.5 V or 5 V supplies?

No, the 71V416S12BEG8 is specified exclusively for 3.3 V operation (VDD = 3.0 V to 3.6 V). Operation outside this range violates absolute maximum ratings and may cause functional failure or accelerated wear-out. It is not 5 V tolerant, and applying 2.5 V will result in undefined behavior, including failure to meet 12 ns timing or incorrect I/O voltage levels.

How does byte enable functionality work on the 71V416S12BEG8?

The 71V416S12BEG8 uses separate active-low BHE (pins A14/A15) and BLE (pins A12/A13) inputs to control high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) access independently. When only BHE is asserted, only the upper byte is written or read; when only BLE is asserted, only the lower byte is accessed. Both must be low for full 16-bit word operation. This eliminates external gating logic in 8-bit peripheral interfaces.