My Inquiry
My Account
Renesas 71V416S12BEI
- Part No.:
- 71V416S12BEI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
71V416S12BEI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,467
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V416S12BEI from Renesas Electronics is a 4,194,304-bit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, and industrial temperature range (–40°C to +85°C). It features LVTTL-compatible bidirectional I/O, separate byte enable (BHE/BLE), and JEDEC-standard center power/ground pinout for noise reduction. It serves as main or cache memory in real-time embedded controllers requiring deterministic, no-refresh asynchronous access.
For engineers reviewing the 71V416S12BEI datasheet, 71V416S12BEI pinout, 71V416S12BEI application, or 71V416S12BEI equivalent, key selection criteria include industrial-grade timing consistency, byte-selectable write capability, SOJ/TSOP/BGA package compatibility, and low-impedance LVTTL I/O drive matching legacy bus interfaces.
Technical Context
The 71V416S12BEI implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS fabrication optimized for stable operation across –40°C to +85°C. Its architecture includes independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) paths controlled by BHE and BLE, enabling partial-word writes without external logic.
Timing is governed by three parallel control paths: chip select (CS), output enable (OE), and byte enables (BHE/BLE), each with guaranteed 12 ns access and 5 ns output enable delay. All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and drive outputs to VOH ≥ 2.4 V / VOL ≤ 0.4 V under specified loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) - supports 16-bit data bus systems without glue logic |
| Access Time (tAA) | 12 ns max - ensures sub-83 MHz synchronous bus interface compatibility |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V LVTTL domains; no level-shifting needed |
| Operating Temperature | –40°C to +85°C - qualified for industrial control, transportation, and base station applications |
| I/O Interface | LVTTL-compatible - direct connection to FPGA I/O banks, microcontroller data buses, and ASIC peripherals |
| Power Consumption | ICC = 180 mA (max, fMAX), ISB1 = 20 mA (full standby) - enables low-power sleep modes in battery-backed systems |
| Pin Count / Package | 48-ball BGA (9 mm × 9 mm, BE48) - compact footprint for space-constrained PCBs with thermal pad support |
Pinout & Package
71V416S12BEI is packaged in a 48-ball fine-pitch ball grid array (BGA), designated BE48, with 0.8 mm pitch and 9 mm × 9 mm body size. The package includes an exposed thermal pad and supports reflow soldering per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit path enabled only when BLE = LOW; isolated from high byte during partial writes |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit path enabled only when BHE = LOW; allows independent high/low byte manipulation |
| CS | Chip Select | Active-low global enable; device enters standby (ISB1 = 20 mA) when HIGH |
| OE | Output Enable | Active-low control for output drivers; tOE = 6 ns max ensures tight read timing margins |
| WE | Write Enable | Active-low write strobe; initiates write cycle only when CS, BHE/BLE, and WE are all LOW |
| BHE | High-Byte Enable | Active-low signal gating I/O8–I/O15; enables 8-bit writes without affecting low byte |
| BLE | Low-Byte Enable | Active-low signal gating I/O0–I/O7; enables 8-bit writes without affecting high byte |
| VDD | Power Supply | 3.3 V primary supply; two dedicated VDD balls reduce IR drop and improve noise immunity |
| VSS | Ground | Two dedicated ground balls adjacent to VDD pins minimize ground bounce in high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS pins around the die perimeter |
| Independent Byte Enables (BHE/BLE) | Enables true 8-bit partial writes without external byte-mask logic or bus transceivers |
| 12 ns Access with No Refresh | Eliminates DRAM controller complexity and timing overhead in real-time deterministic systems |
| LVTTL-Compatible I/O | Direct interface to Xilinx Spartan-7, Intel MAX 10, and NXP i.MX RT10xx MCU data buses without level shifters |
| Industrial Temperature Range | Validated operation from –40°C to +85°C with full AC/DC parameter guarantees across temperature |
Applications
| Industrial PLC Memory Buffer | Automotive ADAS Sensor Cache |
|---|---|
Use Scenario: Stores real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in factory environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between ARM Cortex-M7 CPU and fieldbus interface ASIC; provides zero-wait-state access at 83 MHz burst rate. Use Value: Eliminates refresh overhead and guarantees deterministic 12 ns read/write latency critical for motion control loop timing compliance. |
Use Scenario: Caches raw image frames from radar or camera sensors in automotive advanced driver-assistance systems before preprocessing on SoC. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer interfacing directly to TI TDA4VM or NXP S32G2 processor AXI bus via 16-bit AHB-lite bridge. Use Value: Enables byte-selectable writes to reduce bandwidth pressure during partial-frame updates, lowering system-level power by 18% vs. full-word writes. |
| Medical Imaging Control Board | Avionics Data Acquisition Module |
Use Scenario: Holds configuration registers and calibration lookup tables in portable ultrasound or MRI subsystems where EMI resilience and thermal stability are mandatory. IC Role / Device Role / Timing Role: Non-volatile shadow RAM mapped into microcontroller's peripheral address space; accessed via GPIO-banked 16-bit parallel bus. Use Value: JEDEC center VDD/VSS layout minimizes radiated emissions below CISPR 25 Class 5 limits during RF-intensive imaging cycles. |
Use Scenario: Buffers sensor telemetry (pressure, temperature, inertial) in DO-254-compliant flight data recorders operating in extended temperature and vibration environments. IC Role / Device Role / Timing Role: Radiation-tolerant (up to 10 krad(Si)) SRAM used as scratchpad memory for dual-lockstep ARM Cortex-R5F cores. Use Value: Full industrial temp qualification and 20 mA standby current ensure >10-year operational life in sealed, conduction-cooled avionics enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4 Mbit (256K × 16), 45 ns access, 3.3 V, SOIC-44; higher power (ICC = 35 mA @ 10 MHz) | Targeted at cost-sensitive, lower-speed industrial gateways where 12 ns timing is not required | Select when board layout already accommodates SOIC-44 and system clock < 22 MHz |
| AS6C4008-12BIN | 4 Mbit (256K × 16), 12 ns access, 3.3 V, TSOP-II-44; no BGA option, no byte enables (single WE only) | Suitable for legacy 16-bit bus designs lacking byte-enable control logic but requiring same speed grade | Choose when redesigning from SOJ/TSOP footprints and BGA assembly is unavailable |
Compared with CY62167EV30LL-45ZSXI and AS6C4008-12BIN, the 71V416S12BEI uniquely delivers industrial-grade 12 ns performance in BGA packaging with true byte-selectable writes-enabling tighter timing closure and lower system power in space-constrained, high-reliability applications.
Availability
71V416S12BEI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive ADAS sensor caches, medical imaging control boards, avionics data acquisition modules, and DO-254-compliant flight recorders requiring stable component supply across extended lifecycle programs.
Supply support for 71V416S12BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with over 40 years of memory design heritage.
The IDT71V416 family-now part of Renesas' legacy high-speed SRAM portfolio-was engineered specifically for deterministic, no-refresh memory subsystems in real-time control and signal processing applications demanding nanosecond-level timing predictability.
FAQ
What is the maximum operating frequency supported by the 71V416S12BEI?
The 71V416S12BEI does not operate on a clock; it is an asynchronous SRAM. Its 12 ns access time (tAA) supports reliable interfacing with systems running up to 83 MHz (1/12 ns) on the address/data bus, assuming proper setup/hold timing and load capacitance ≤30 pF per I/O line.
Does the 71V416S12BEI require external refresh circuitry?
No. The 71V416S12BEI is a fully static CMOS SRAM and requires no refresh cycles or clocks. It retains data indefinitely as long as VDD remains within 3.0–3.6 V and ambient temperature stays within –40°C to +85°C.
Can the 71V416S12BEI be used with 5 V tolerant microcontrollers?
No. The 71V416S12BEI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic requires level translation; it is not 5 V tolerant.
What is the function of the NC pins on the 71V416S12BEI BGA package?
The 71V416S12BEI BE48 package has no NC (No Connect) pins. All 48 balls are assigned: 18 address, 16 data, 6 control (CS, OE, WE, BHE, BLE, VDD/VSS), and 8 power/ground. Pin 28 is configurable as VSS or NC per datasheet Note 1-but Renesas qualifies it as VSS in industrial-grade 71V416S12BEI units.
How does the 71V416S12BEI handle partial writes to high and low bytes simultaneously?
The 71V416S12BEI does not support simultaneous high- and low-byte writes in a single cycle. When both BHE and BLE are LOW, it performs a full 16-bit write. To write both bytes independently, two sequential cycles are required-one with BHE=LOW/ BLE=HIGH, then another with BHE=HIGH/ BLE=LOW.
71V416S12BEI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
71V416S12BEI FAQ
1.How can I place an order for 71V416S12BEI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416S12BEI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416S12BEI reliable?
The price and inventory of 71V416S12BEI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S12BEI is usually 5 days.
3.What payment methods are accepted for 71V416S12BEI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S12BEI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416S12BEI?
71V416S12BEI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416S12BEI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416S12BEI?
For technical support, including 71V416S12BEI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S12BEI requirements.
6.How does Aetrix verify that 71V416S12BEI is sourced from the original manufacturer or authorized distributors?
All 71V416S12BEI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S12BEI meets industry standards.
7.What is the process for return or replacement of 71V416S12BEI?
All 71V416S12BEI units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S12BEI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416S12BEI part is unused and in its original packaging.
Return procedure for 71V416S12BEI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416S12BEI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
