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Renesas 71V416S12PHG

Part No.:
71V416S12PHG
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
Aetrix71V416S12PHG.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:125

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Product details

Overview

71V416S12PHG from Renesas is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is used in embedded controllers, networking interface buffers, and real-time data acquisition systems.

For engineers reviewing the 71V416S12PHG datasheet, 71V416S12PHG pinout, 71V416S12PHG application, or 71V416S12PHG equivalent, key selection criteria include its 12 ns read cycle time, dual byte enable (BHE/BLE), output enable latency of 6 ns, and TSOP Type II (PHG44) package compatibility with space-constrained PCB layouts.

Technical Context

The 71V416S12PHG implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for low-noise, high-speed memory access. Its address decoding, sense amplifiers, and bidirectional write drivers are integrated into a single die with separate high- and low-byte I/O paths.

Operation relies on three independent control signals: Chip Select (CS), Output Enable (OE), and Write Enable (WE), plus Byte Enable (BHE/BLE) for selective 8-bit access. All timing parameters-including tAA (12 ns), tRC (12 ns), and tOE (6 ns)-are specified across full commercial temperature and voltage (3.0–3.6 V) ranges.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4,194,304 bits (256K × 16 organization)
Access Time (tAA) 12 ns - defines minimum address-to-data-valid delay for reliable read setup
Read Cycle Time (tRC) 12 ns - sets maximum sustained read rate (83.3 MHz burst capability)
Supply Voltage 3.3 V ±10% (3.0–3.6 V) - compatible with LVTTL logic families without level shifting
I/O Interface LVTTL-compatible bidirectional data bus (I/O0–I/O15) - ensures interoperability with 3.3 V microcontrollers and FPGAs
Byte Control Dedicated BHE and BLE inputs - enables independent 8-bit writes to upper/lower bytes without masking logic
Power Dissipation 180 mA dynamic ICC (max), 20 mA static ISB1 - supports low-power standby modes in battery-backed systems

Pinout & Package

71V416S12PHG is packaged in a 44-pin, 400-mil TSOP Type II (PHG44) with JEDEC-standard center-power/ground pinout to minimize simultaneous switching noise. The package measures 12.0 mm × 10.0 mm × 1.2 mm and is RoHS-compliant and green (halogen-free).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; no internal latching
CS Chip Select Active-low global enable; device enters high-Z standby when deasserted
OE Output Enable Active-low control for output buffer; allows read data gating without affecting CS state
WE Write Enable Active-low signal initiating write cycles; combined with BHE/BLE to define byte granularity
BHE, BLE Byte Enable Independent active-low controls for high (I/O8–I/O15) and low (I/O0–I/O7) data bytes
I/O0–I/O15 Bidirectional Data 16-bit LVTTL I/O bus; direction controlled by WE and CS states per cycle
VDD Power Supply 3.3 V main supply; two pins (pins 13 & 32) placed centrally per JEDEC standard
VSS Ground Ground reference; two pins (pins 12 & 31) adjacent to VDD for low-inductance return path

Key Features

Feature Design Value
JEDEC Center Power/Ground Pinout Reduces simultaneous switching noise by minimizing power/ground loop inductance in high-speed bus environments
Separate Byte Enables (BHE/BLE) Enables efficient 8-bit peripheral interfacing without external byte-mask logic or bus transceivers
5 ns Output Enable Latency (tOE) Supports tight timing margins in synchronous burst reads with external controllers or DMA engines
Low Standby Current (ISB1 = 20 mA) Permits use in always-on subsystems where memory retention must coexist with ultra-low quiescent power
Single 3.3 V Supply Operation Eliminates need for dual-voltage regulation, simplifying power architecture in compact embedded designs

Applications

Industrial PLC Data Buffer Network Packet Buffer

Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor data is acquired at 10 kHz and buffered before cyclic processing.

IC Role / Device Role / Timing Role: High-speed, non-refreshing data staging memory interfaced directly to an ARM Cortex-M7 bus with 16-bit data width.

Use Value: 12 ns access time ensures sub-microsecond response to CPU read requests, enabling deterministic scan cycle execution within 50 µs deadlines.

Use Scenario: Temporary storage of Ethernet frames in a Layer 2 switch ASIC's ingress pipeline before forwarding decision and egress scheduling.

IC Role / Device Role / Timing Role: Asynchronous SRAM acting as first-in-first-out (FIFO) buffer between MAC and switch fabric interfaces.

Use Value: Dual byte enables allow partial frame writes (e.g., header-only updates) without disturbing payload data, reducing bus arbitration overhead.

Medical Imaging Frame Store Automotive ADAS Preprocessing Buffer

Use Scenario: Capturing raw pixel streams from a 12-bit CMOS image sensor running at 60 fps in portable ultrasound equipment.

IC Role / Device Role / Timing Role: Burst-access memory holding one full frame (1024 × 768 × 2 bytes) for real-time beamforming computation.

Use Value: 3.3 V LVTTL compatibility eliminates level shifters between sensor interface IC and FPGA, reducing BOM count and signal integrity risk.

Use Scenario: Storing pre-fused radar and camera object lists in a domain controller prior to path planning execution.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by multiple safety-critical cores via shared AXI bus.

Use Value: Center-power/ground pinout minimizes ground bounce during simultaneous multi-core read bursts, preserving ASIL-B timing integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXIT 512K × 16, 45 ns access, 3.3 V, SOIC-44 - slower but higher density and wider availability Used where bandwidth is secondary to capacity in legacy industrial HMIs Select when >256K depth is needed and 12 ns timing is not required
IS61LV25616AL-10TLI 256K × 16, 10 ns access, 3.3 V, TSOP-44 - faster access but higher ICC (220 mA) and no BGA option Favored in cost-sensitive telecom line cards requiring minimal latency Choose for tighter tAA budgets if power budget allows +22% dynamic current

Compared with 71V416S12PHG, CY62167EV30LL-45ZSXIT trades speed for density and long-term supply stability, while IS61LV25616AL-10TLI delivers lower latency at higher power cost-making 71V416S12PHG optimal for balanced performance, noise immunity, and TSOP footprint in new designs.

Availability

71V416S12PHG is available at Aetrix Electronics and suitable for industrial automation, medical imaging, and automotive ADAS applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for 71V416S12PHG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions, including microcontrollers, analog, power, and memory products for industrial, automotive, and infrastructure markets.

The 71V416S12PHG belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered for deterministic, low-noise memory interfacing in real-time embedded systems where refresh-free operation and precise timing control are critical.

FAQ

What is the operating temperature range for the 71V416S12PHG?

The 71V416S12PHG is rated for commercial temperature operation from 0°C to +70°C. It is not qualified for industrial temperature range (–40°C to +85°C); that grade is designated by suffix "I" (e.g., 71V416S12PHGI). This distinction is confirmed in the Ordering Information table and AC Electrical Characteristics section of the Renesas datasheet.

Does the 71V416S12PHG require external refresh circuitry?

No, the 71V416S12PHG is a fully static RAM and requires no refresh cycles or clocks. Its asynchronous design uses only CS, OE, WE, BHE, and BLE control signals-making it ideal for systems where deterministic timing and zero-refresh overhead are essential, such as real-time control loops.

Can the 71V416S12PHG be used with 5 V logic interfaces?

No, the 71V416S12PHG is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH min is 2.0 V-making direct connection to 5 V TTL or CMOS outputs unsafe without level translation. Interfacing with 5 V systems requires dedicated voltage translators like the TXB0108.

What is the meaning of "PHG" in the 71V416S12PHG part number?

"PHG" denotes the 44-pin, 400-mil TSOP Type II package (PHG44) per Renesas' ordering convention. It distinguishes this variant from SOJ (YG) and BGA (BE/BEG) versions. The "PHG" suffix confirms mechanical compatibility with industry-standard TSOP-II footprints and reflow profiles.

How does the JEDEC center power/ground pinout improve noise performance in the 71V416S12PHG?

The JEDEC center power/ground layout places VDD and VSS pins symmetrically near the middle of each long edge (pins 12/13 and 31/32), shortening high-frequency return paths and reducing ground bounce during simultaneous I/O switching. This configuration is validated in the datasheet's "Features" and "Pin Configurations" sections as a key noise-reduction technique.

71V416S12PHG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

71V416S12PHG FAQ

1.How can I place an order for 71V416S12PHG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416S12PHG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416S12PHG reliable?

The price and inventory of 71V416S12PHG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S12PHG is usually 5 days.

3.What payment methods are accepted for 71V416S12PHG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S12PHG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416S12PHG?

71V416S12PHG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416S12PHG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416S12PHG?

For technical support, including 71V416S12PHG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S12PHG requirements.

6.How does Aetrix verify that 71V416S12PHG is sourced from the original manufacturer or authorized distributors?

All 71V416S12PHG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S12PHG meets industry standards.

7.What is the process for return or replacement of 71V416S12PHG?

All 71V416S12PHG units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S12PHG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416S12PHG part is unused and in its original packaging.

Return procedure for 71V416S12PHG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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