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Renesas 71V416S12PHG8

Name: 71V416S12PHG8
Brand: Renesas
SKU: 71V416S12PHG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V416S12PHG8

Manufacturer:: Renesas

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: 71V416S12PHG8.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

71V416S12PHG8 from Renesas is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is used in embedded controllers, networking buffers, and industrial data acquisition systems requiring deterministic, non-refreshed memory access.

For engineers reviewing the 71V416S12PHG8 datasheet, 71V416S12PHG8 pinout, 71V416S12PHG8 application, or 71V416S12PHG8 equivalent, key selection criteria include tAA = 12 ns access time, BHE/BLE byte enable control, SOJ-44 package compatibility, and low-Z output timing (tOLZ = 0 ns) for synchronous bus interfacing.

Technical Context

The 71V416S12PHG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual-byte enable (BHE/BLE) to support independent high- and low-byte access. Its address decoding includes 18 address inputs (A0–A17) for full 256K-word addressing, with chip select (CS), output enable (OE), and write enable (WE) enabling precise bus arbitration.

It features LVTTL-compatible bidirectional I/O (I/O0–I/O15), 3.3 V single-supply operation (VDD = 3.0–3.6 V), and JEDEC-compliant SOJ-44 pinout with VDD/VSS on pins 12/11 and 33/34. Standby current ISB1 is 20 mA max under full static conditions, supporting low-power hold modes without data loss.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	4,194,304 bits (256K × 16), enabling 32 KB of word-accessible storage for buffer or cache applications.
Access Time (tAA)	12 ns maximum - guarantees deterministic read latency for real-time control loops and high-speed FIFOs.
Supply Voltage	3.3 V ±0.3 V (3.0–3.6 V) - compatible with modern LVTTL and 3.3 V logic families without level translation.
Byte Enable Support	BHE and BLE inputs allow independent 8-bit writes to upper/lower bytes - essential for mixed-endian or partial-word updates.
Output Enable Timing (tOE)	6 ns maximum - ensures fast data valid window after OE assertion, critical for burst-mode bus protocols.
Standby Current (ISB1)	20 mA maximum at VDD max and f = 0 - enables low-power sleep states without data retention loss.
Package	44-pin, 400-mil plastic SOJ (PHG44) - industry-standard footprint with JEDEC center-power/ground layout for EMI reduction.

Pinout & Package

71V416S12PHG8 is packaged in a 44-pin, 400-mil plastic SOJ (PHG44) with JEDEC-standard center-power/ground pinout optimized for signal integrity. Pin 1 is I/O7; pins 11 and 12 are VSS and VDD respectively; pins 33 and 34 are VDD and VSS - reducing ground bounce and power rail noise.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus supporting full 256K-word addressing; no internal latching - requires stable address during CS low.
CS	Chip Select	Active-low enable controlling device participation in bus cycles; tACS = 12 ns defines minimum CS setup before valid data.
OE	Output Enable	Active-low control for output drivers; tOE = 6 ns determines earliest data valid time after assertion.
WE	Write Enable	Active-low write strobe; tWP = 8 ns minimum pulse width ensures reliable data capture into memory array.
BHE / BLE	Byte Enable Inputs	Active-low controls upper (I/O8–I/O15) or lower (I/O0–I/O7) byte access; enables partial-word writes without read-modify-write.
I/O0–I/O15	Bidirectional Data Bus	LVTTL-compatible 16-bit I/O; high-impedance when CS high or OE high - allows multi-drop bus sharing.
VDD / VSS	Power / Ground	Single 3.3 V supply; center-placed VDD/VSS pairs (pins 11/12, 33/34) minimize simultaneous switching noise.

Key Features

Feature	Design Value
JEDEC Center Power/Ground Pinout	Reduces ground bounce and supply noise by symmetrically placing VDD/VSS near center of package - improves signal integrity in dense PCB layouts.
Zero-Setup Byte Write Control	tAS = 0 ns for address setup before WE assert - simplifies timing-critical controller designs and eliminates external address latch requirements.
Fast Output Enable Response	tOLZ = 0 ns and tOE = 6 ns enable immediate data availability after OE activation - ideal for interrupt-driven or event-triggered memory reads.
Low-Z Output Hold Time	tOH = 4 ns ensures data remains valid for 4 ns after address change - prevents bus contention during rapid address transitions.
Full Static Operation	No clocks, no refresh cycles required - eliminates timing overhead and supports indefinite data retention in standby mode.

Applications

Industrial PLC Data Buffer	Network Packet Buffer
Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor data must be written and retrieved within fixed microsecond windows. IC Role / Device Role / Timing Role: Non-volatile buffer storing process variables between scan cycles; operates as word- or byte-addressable scratchpad memory. Use Value: 12 ns tAA and tWC guarantee deterministic response under worst-case timing budgets, eliminating jitter in control loop execution.	Use Scenario: Temporary storage of Ethernet frames in switch ASIC support logic before forwarding or classification. IC Role / Device Role / Timing Role: High-speed FIFO buffer interfacing with MAC layer controllers via LVTTL bus; supports burst reads/writes. Use Value: BHE/BLE byte enables allow partial frame updates without full-word overwrite, reducing bus bandwidth consumption by up to 50%.
Medical Imaging Frame Store	Test Equipment Pattern Memory
Use Scenario: Capturing raw pixel data from analog front-end ADCs in ultrasound or digital X-ray subsystems. IC Role / Device Role / Timing Role: Synchronous write buffer accepting parallel 16-bit samples at up to 83 MHz (12 ns cycle), then read out under DMA control. Use Value: tCLZ = 4 ns and tCHZ = 6 ns ensure clean bus release between successive transfers - prevents data corruption during high-throughput streaming.	Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for semiconductor functional validation. IC Role / Device Role / Timing Role: Deterministic pattern memory accessed by high-speed sequencer logic; requires zero-wait-state operation across temperature range. Use Value: Full static design and 0°C to +70°C commercial grade ensure consistent 12 ns timing across environmental stress tests and production burn-in.

Industrial PLC Data Buffer

Network Packet Buffer

Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor data must be written and retrieved within fixed microsecond windows.

IC Role / Device Role / Timing Role: Non-volatile buffer storing process variables between scan cycles; operates as word- or byte-addressable scratchpad memory.

Use Value: 12 ns tAA and tWC guarantee deterministic response under worst-case timing budgets, eliminating jitter in control loop execution.

Use Scenario: Temporary storage of Ethernet frames in switch ASIC support logic before forwarding or classification.

IC Role / Device Role / Timing Role: High-speed FIFO buffer interfacing with MAC layer controllers via LVTTL bus; supports burst reads/writes.

Use Value: BHE/BLE byte enables allow partial frame updates without full-word overwrite, reducing bus bandwidth consumption by up to 50%.

Medical Imaging Frame Store

Test Equipment Pattern Memory

Use Scenario: Capturing raw pixel data from analog front-end ADCs in ultrasound or digital X-ray subsystems.

IC Role / Device Role / Timing Role: Synchronous write buffer accepting parallel 16-bit samples at up to 83 MHz (12 ns cycle), then read out under DMA control.

Use Value: tCLZ = 4 ns and tCHZ = 6 ns ensure clean bus release between successive transfers - prevents data corruption during high-throughput streaming.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for semiconductor functional validation.

IC Role / Device Role / Timing Role: Deterministic pattern memory accessed by high-speed sequencer logic; requires zero-wait-state operation across temperature range.

Use Value: Full static design and 0°C to +70°C commercial grade ensure consistent 12 ns timing across environmental stress tests and production burn-in.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY62167EV30LL-45ZSXIT	256K × 16, 45 ns access, 3.3 V, TSOP-44 - slower but higher noise immunity and extended temp (-40°C to +85°C).	Suitable for industrial environments where timing margin >30 ns is acceptable but thermal robustness is critical.	Select when long-term reliability at temperature extremes outweighs speed requirements.
AS6C4008-12PIN	256K × 16, 12 ns access, 3.3 V, SOJ-44 - identical speed and package, but lacks BHE/BLE byte enables and has higher ISB1 (35 mA).	Applicable where full-word access suffices and lower standby power is not required.	Choose only if byte-select functionality is unused and board layout rework for alternate pinout is prohibitive.

Compared with CY62167EV30LL-45ZSXIT and AS6C4008-12PIN, the 71V416S12PHG8 uniquely delivers 12 ns access with integrated BHE/BLE control in a JEDEC-compliant SOJ-44 package - making it optimal for space-constrained, timing-critical designs requiring partial-word writes and low-noise operation.

Availability

71V416S12PHG8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, network packet buffering, and medical imaging frame storage requiring stable component supply across extended production lifecycles.

Supply support for 71V416S12PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416S12PHG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered for deterministic, low-latency memory access in real-time embedded systems without refresh overhead.

FAQ

What is the operating temperature range for the 71V416S12PHG8?

The 71V416S12PHG8 is rated for commercial temperature operation from 0°C to +70°C. This specification is confirmed in the Ordering Information table (page 8) and DC Operating Conditions section (page 3) of the Renesas datasheet dated May 26, 2021. It does not support industrial-grade operation (–40°C to +85°C); for that range, part numbers ending in "I" such as 71V416S12PHGI8 must be selected. The 71V416S12PHG8 maintains full 12 ns timing performance across its entire commercial temperature span.

Does the 71V416S12PHG8 require a refresh circuit?

No, the 71V416S12PHG8 is a fully static RAM and requires no refresh circuitry or clock input. Its internal design uses static CMOS latches for each memory cell, ensuring indefinite data retention as long as power is applied. This is explicitly stated in the Description section ("Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation") and verified in the Functional Block Diagram, which shows no clock inputs or refresh control logic. The 71V416S12PHG8 can remain in standby with CS high and retain data indefinitely.

What package type and pin count does the 71V416S12PHG8 use?

The 71V416S12PHG8 uses a 44-pin, 400-mil plastic SOJ (Small Outline J-lead) package, identified by code PHG44 per the Ordering Information table. Pin 1 is I/O7, and the package follows JEDEC standard center-power/ground layout with VSS on pin 11, VDD on pin 12, VDD on pin 33, and VSS on pin 34. This configuration is illustrated in the "Pin Configurations – SOJ/TSOP(2)" diagram (page 2) and confirmed in the "Orderable Part Information" tables (pages 8–9) of the Renesas datasheet.

Can the 71V416S12PHG8 interface directly with 3.3 V LVTTL logic?

Yes, the 71V416S12PHG8 features LVTTL-compatible inputs and outputs, as explicitly stated in the Features list and verified in the DC Electrical Characteristics table (page 4). Input thresholds meet VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.3 V, while output drive meets VOH ≥ 2.4 V (IOH = –4 mA) and VOL ≤ 0.4 V (IOL = 8 mA). No level-shifting circuitry is needed when interfacing with standard 3.3 V LVTTL devices such as FPGA I/O banks or microcontroller GPIOs.

What is the maximum clock frequency supported by the 71V416S12PHG8?

As a static RAM, the 71V416S12PHG8 does not operate from a clock signal and therefore has no maximum clock frequency rating. Instead, its speed is defined by timing parameters: tRC (read cycle time) and tWC (write cycle time) are both 12 ns maximum. This corresponds to a theoretical maximum bus transaction rate of 83.3 MHz (1/12 ns), assuming zero inter-cycle overhead. All timing is asynchronous and controlled solely by CS, WE, OE, and address stability - no clock domain crossing or synchronization logic is required for correct operation of the 71V416S12PHG8.

71V416S12PHG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 12ns

Access Time:: 12 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

71V416S12PHG8 FAQ

1.How can I place an order for 71V416S12PHG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416S12PHG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416S12PHG8 reliable?

The price and inventory of 71V416S12PHG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S12PHG8 is usually 5 days.

3.What payment methods are accepted for 71V416S12PHG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S12PHG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416S12PHG8?

71V416S12PHG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416S12PHG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416S12PHG8?

For technical support, including 71V416S12PHG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S12PHG8 requirements.

6.How does Aetrix verify that 71V416S12PHG8 is sourced from the original manufacturer or authorized distributors?

All 71V416S12PHG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S12PHG8 meets industry standards.

7.What is the process for return or replacement of 71V416S12PHG8?

All 71V416S12PHG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S12PHG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416S12PHG8 part is unused and in its original packaging.

Return procedure for 71V416S12PHG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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