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Renesas 71V416S12PHGI

Part No.:
71V416S12PHGI
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
Aetrix71V416S12PHGI.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:260

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Product details

Overview

71V416S12PHGI from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is packaged in a 44-pin, 400-mil TSOP Type II.

For engineers reviewing the 71V416S12PHGI datasheet, 71V416S12PHGI pinout, 71V416S12PHGI application, or 71V416S12PHGI equivalent, key selection criteria include its 12 ns tAA/tACS timing, dual-byte enable architecture, low-Z output enable response (tOLZ = 0 ns), and industrial-grade reliability in memory subsystems requiring deterministic asynchronous access.

Technical Context

The 71V416S12PHGI implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for low-noise, high-speed memory interfacing. Its address decoding, sense amplifiers, and write drivers are integrated on-die to deliver consistent 12 ns access across all address lines.

It features independent high- and low-byte enables (BHE/BLE), separate chip select (CS) and output enable (OE), and bidirectional LVTTL-compatible I/O buffers that support mixed-mode timing control-enabling CS-, OE-, or byte-enable–gated read/write cycles per JEDEC-compliant truth table behavior.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16 organization)
Access Time (tAA)12 ns - guarantees data valid within 12 ns of stable address and CS/OE assertion
Supply Voltage3.0 V to 3.6 V - operates reliably across full 3.3 V rail tolerance without external regulation
I/O InterfaceLVTTL-compatible - interfaces directly with 3.3 V logic families without level shifters
Operating Temperature–40°C to +85°C - qualified for industrial environments including motor control and base station equipment
Power Dissipation (Active)180 mA ICC (max) at fMAX - enables predictable thermal design in dense PCB layouts
Standby Current60 mA ISB (max) - reduces system power during idle cycles without sacrificing wake latency

Pinout & Package

71V416S12PHGI is housed in a 44-pin, 400-mil TSOP Type II package (PHG44), with JEDEC-standard center-power/ground pinout to minimize simultaneous switching noise. Pin 1 is located at top-left corner when notch faces up; pin numbering proceeds counterclockwise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no internal latching
CSChip SelectActive-low enable for device selection; controls internal array activation and power state
OEOutput EnableActive-low control for output buffer tri-state; tOE = 6 ns ensures fast read turnaround
WEWrite EnableActive-low signal initiating write cycle; coordinates with BHE/BLE to gate data flow
BHE, BLEByte EnableIndependent high- and low-byte controls enabling 8-bit partial writes without disturbing adjacent bytes
I/O0–I/O15Bidirectional Data16-bit LVTTL I/O bus; direction controlled by WE/CS/OE state per truth table
VDDPower Supply3.3 V core and I/O supply; two pins (pins 13 & 32) reduce IR drop and improve noise immunity
VSSGroundReference ground; two pins (pins 11 & 34) provide low-inductance return path

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by symmetrically distributing VDD/VSS around perimeter
Zero Delay Output Enable Response (tOLZ)tOLZ = 0 ns means outputs enter active state immediately upon OE assertion-critical for burst-read timing
Dual Byte Enable ArchitectureEnables selective 8-bit writes to upper or lower byte without read-modify-write overhead
Industrial Temperature Range SupportGuaranteed 12 ns timing and full functionality across –40°C to +85°C ambient conditions
Low-Impedance Output DriversVOH ≥ 2.4 V @ –4 mA and VOL ≤ 0.4 V @ 8 mA ensure robust noise margins in noisy industrial buses

Applications

Industrial PLC Memory BufferMedical Imaging Frame Store

Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers where deterministic memory access prevents scan-time jitter.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state data storage for ladder logic operands and register files.

Use Value: 12 ns tAA and tACS guarantee sub-20 ns worst-case operand fetch, enabling <100 µs PLC scan cycles even at maximum I/O density.

Use Scenario: Temporary frame buffering in portable ultrasound and digital X-ray systems before compression or transmission.

IC Role / Device Role / Timing Role: High-reliability, non-refreshing memory holding raw sensor pixel data during acquisition bursts.

Use Value: Industrial temp rating and 60 mA ISB allow continuous operation in sealed enclosures with passive cooling and minimal standby power draw.

Avionics Data LoggerTest & Measurement Equipment FIFO

Use Scenario: Capturing flight-critical sensor telemetry (GPS, IMU, engine parameters) at 10 kHz sample rate with guaranteed data integrity.

IC Role / Device Role / Timing Role: Deterministic-access memory staging raw ADC streams prior to error-checked packaging and storage.

Use Value: Fully static operation eliminates refresh-induced timing uncertainty-essential for DO-254 compliance in safety-critical logging paths.

Use Scenario: High-speed waveform capture in oscilloscopes and logic analyzers where deep memory depth must not compromise sampling rate.

IC Role / Device Role / Timing Role: Asynchronous FIFO buffer interfacing between front-end analog capture and back-end processing ASICs.

Use Value: LVTTL compatibility and 0 ns tOLZ enable direct connection to FPGA I/O banks without timing closure penalties at >100 MHz effective throughput.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZSXI4-Mbit (256K × 16), 45 ns access, 3.3 V, 44-pin TSOP II - slower but higher noise immunity via on-die terminationSuitable for cost-sensitive industrial controllers where timing margin >30 ns existsSelect if system clock domain allows >40 ns memory latency and board layout lacks tight noise control.
AS6C4008-12TIN4-Mbit (512K × 8), 12 ns access, 3.3 V, 32-pin SOJ - narrower 8-bit bus, different pinout, no BHE/BLEFits space-constrained designs needing byte-wide interface only; requires bus-width adaptationChoose when 8-bit microcontroller interface is fixed and PCB redesign for 16-bit bus is prohibitive.

Compared with 71V416S12PHGI, CY62167EV30LL-45ZSXI trades speed for robustness in electrically noisy environments, while AS6C4008-12TIN sacrifices data width and byte-select flexibility to reduce footprint and pin count-neither matches the 71V416S12PHGI's combination of 12 ns timing, 16-bit LVTTL interface, and industrial-grade dual-byte control.

Availability

71V416S12PHGI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, test & measurement FIFOs, and embedded controller boot-ROM shadowing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V416S12PHGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V416S12PHGI belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time industrial and communications systems where refresh-free operation and precise timing predictability are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V416S12PHGI?

The 71V416S12PHGI does not operate on a clock; it is an asynchronous SRAM. Its performance is defined by timing parameters-not frequency. With 12 ns access time (tAA), it supports effective memory cycle rates up to ~83 MHz in ideal conditions (1 / 12 ns). Actual system throughput depends on bus protocol, controller timing margins, and address/data setup/hold requirements. The 71V416S12PHGI datasheet specifies tRC = 12 ns minimum read/write cycle time.

Does the 71V416S12PHGI require a refresh circuit or external clock signal?

No, the 71V416S12PHGI is a fully static RAM and requires neither a refresh circuit nor any clock signal. Its internal latches retain data indefinitely as long as VDD is applied and CS remains deasserted. This eliminates timing uncertainty from refresh cycles-a key advantage over DRAM in real-time deterministic systems. The 71V416S12PHGI operates purely on address, control, and data strobes.

Can the 71V416S12PHGI be used with 5 V logic interfaces?

No-the 71V416S12PHGI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH min is 2.0 V. Direct connection to 5 V logic violates DC operating conditions and risks damage or unreliable operation. Level translation (e.g., TXB0108 or discrete MOSFET translators) is required for 5 V host interfaces. The 71V416S12PHGI is not 5 V tolerant.

What is the function of the BHE and BLE pins on the 71V416S12PHGI?

BHE (Byte High Enable) and BLE (Byte Low Enable) are active-low control inputs that independently gate the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes during read and write operations. When only BHE is asserted, only the high byte is accessed; when only BLE is asserted, only the low byte is accessed. This enables efficient 8-bit partial writes without requiring a read-modify-write sequence. The 71V416S12PHGI truth table defines all valid combinations.

Is the 71V416S12PHGI RoHS compliant and halogen-free?

Yes-the 71V416S12PHGI is a green part per Renesas ordering nomenclature ('G' suffix in package code). It complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The 'G' in PHGI indicates lead-free, RoHS-compliant finish and halogen-free molding compound. Full compliance documentation-including substance declarations and test reports-is available through Renesas' quality portal for the 71V416S12PHGI.

71V416S12PHGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

71V416S12PHGI FAQ

1.How can I place an order for 71V416S12PHGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416S12PHGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416S12PHGI reliable?

The price and inventory of 71V416S12PHGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S12PHGI is usually 5 days.

3.What payment methods are accepted for 71V416S12PHGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S12PHGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416S12PHGI?

71V416S12PHGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416S12PHGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416S12PHGI?

For technical support, including 71V416S12PHGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S12PHGI requirements.

6.How does Aetrix verify that 71V416S12PHGI is sourced from the original manufacturer or authorized distributors?

All 71V416S12PHGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S12PHGI meets industry standards.

7.What is the process for return or replacement of 71V416S12PHGI?

All 71V416S12PHGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S12PHGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416S12PHGI part is unused and in its original packaging.

Return procedure for 71V416S12PHGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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