Renesas 71V416S12YGI

Overview

71V416S12YGI from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and data acquisition systems.

For engineers reviewing the 71V416S12YGI datasheet, 71V416S12YGI pinout, 71V416S12YGI application, or 71V416S12YGI equivalent, key selection criteria include access time consistency (tAA = tRC = 12 ns), JEDEC-compliant SOJ pinout, low-power standby current (ISB = 60 mA max), and industrial-grade reliability in space-constrained PCB layouts.

Technical Context

The 71V416S12YGI implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture allows independent 8-bit read/write operations on upper (I/O8–I/O15) and lower (I/O0–I/O7) data lanes without external logic.

Timing is controlled by three independent enables: CS governs device selection, OE controls output driver activation (tOE = 6 ns max), and WE coordinates write cycles (tWP = 8 ns min). All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and drive LVTTL loads directly.

Key Specifications

Pinout & Package

71V416S12YGI is housed in a 44-pin, 400-mil plastic SOJ (PBG44) package with JEDEC-standard center power/ground pinout to minimize switching noise. Pin assignments follow industry-standard memory layout for drop-in compatibility with other 256K×16 SRAMs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with CY62167EV30LL-45ZSXIT and AS6C4008-12TIN, the 71V416S12YGI delivers superior timing determinism for real-time control while maintaining industrial temperature compliance and SOJ footprint compatibility-making it optimal for new designs demanding both speed and ruggedness.

Availability

71V416S12YGI is available at Aetrix Electronics and suitable for industrial PLC memory expansion, automotive ECU data logging, and medical imaging buffer applications requiring stable component supply across extended product lifecycles.

Supply support for 71V416S12YGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The 71V416S12YGI belongs to Renesas' legacy high-speed parallel SRAM product line, engineered for deterministic timing, low-noise operation, and industrial reliability in mission-critical embedded systems.

FAQ

What is the maximum operating frequency supported by the 71V416S12YGI?

The 71V416S12YGI does not operate on a clock; it is an asynchronous SRAM. Its maximum effective bandwidth is determined by its 12 ns access and cycle times, enabling up to ~83 MHz random read/write throughput on a 16-bit bus. This translates to sustained data rates of approximately 1.33 Gbps under ideal burst conditions, assuming zero bus turnaround overhead.

Does the 71V416S12YGI require external refresh circuitry?

No, the 71V416S12YGI is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS memory array retains data indefinitely as long as VDD remains within specification (3.0–3.6 V) and ambient temperature stays within the industrial range (–40°C to +85°C). This eliminates timing-critical refresh management in microcontroller-based systems.

Can the 71V416S12YGI be used with 5 V logic interfaces?

No-the 71V416S12YGI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V. Direct connection to 5 V logic violates absolute maximum ratings and risks permanent damage. Level translation (e.g., TXB0108 or SN74AVC4T245) is mandatory for interoperability with 5 V systems.

What is the function of the NC pins on the 71V416S12YGI SOJ package?

The 71V416S12YGI SOJ package has one NC (No Connect) pin-pin 22 in the top-view diagram. Per Renesas documentation, this pin is internally unconnected and must remain floating or grounded per board-level EMI requirements; it must never be tied to VDD. No functionality is affected whether NC is left open or grounded.

How does the 71V416S12YGI handle simultaneous byte writes to upper and lower data lanes?

The 71V416S12YGI supports concurrent upper- and lower-byte writes only when both BHE and BLE are asserted low simultaneously during a valid write cycle (CS low, WE low). In this mode, I/O0–I/O7 and I/O8–I/O15 accept independent data values, effectively performing a full 16-bit write without requiring additional address decoding or glue logic.