Renesas 71V416S15BE

Overview

71V416S15BE from Renesas Electronics is a 4,194,304-bit (256K × 16) high-speed CMOS static RAM operating from a single 3.3V supply, with 15ns read cycle time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/O. It serves as a non-refreshing, fully static memory buffer in embedded controllers, network packet buffers, and real-time data acquisition systems.

For engineers reviewing the 71V416S15BE datasheet, 71V416S15BE pinout, 71V416S15BE application, or 71V416S15BE equivalent, this page delivers verified timing parameters, byte-enable control behavior, SOJ/TSOP/BGA package mapping, and industrial-grade DC/AC electrical specs per Renesas' May 2021 rebranded documentation.

Technical Context

The 71V416S15BE implements fully static asynchronous circuitry-no clocks or refresh required-and uses separate high-byte (BHE) and low-byte (BLE) enable inputs to support 8-bit sub-word access. Its address decoding covers A0–A17 (18-bit), enabling full 256K-word addressing without external logic.

It features three independent control paths: chip-select (CS)-driven, output-enable (OE)-driven, and byte-enable (BHE/BLE)-driven write/read operations, each with distinct timing constraints (e.g., tCLZ = 4ns, tOHZ = 7ns). All I/Os are LVTTL-compatible with VIH(min) = 2.0V and VIL(max) = 0.8V at VDD = 3.0–3.6V.

Key Specifications

Pinout & Package

71V416S15BE is packaged in a 48-ball fine-pitch CABGA (9mm × 9mm, BE48/BEG48 code), with ball pitch of 0.8mm and JEDEC-standard center power/ground layout to minimize switching noise. Pin functions align with SOJ/TSOP variants but mapped to BGA ball grid.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed static RAM applications.

Compared with AS7C3256B-15TIN and IS61LV25616AL-15TQLI, the 71V416S15BE uniquely combines JEDEC noise-optimized pinout, explicit BHE/BLE timing validation, and CABGA packaging - making it optimal for new designs prioritizing signal integrity and high-density integration.

Availability

71V416S15BE is available at Aetrix Electronics and suitable for industrial PLC data buffering, network switch packet memory, and medical imaging frame store applications requiring stable component supply across commercial temperature grades.

Supply support for 71V416S15BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416S15BE belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered for deterministic, low-latency memory access in real-time embedded systems without refresh overhead.

FAQ

What is the maximum clock-equivalent operating frequency supported by the 71V416S15BE?

The 71V416S15BE is an asynchronous SRAM with no internal clock; its effective throughput is governed by tRC = 15ns, yielding a maximum sustained cycle rate of 66.7 MHz. This means the 71V416S15BE can execute one complete read or write operation every 15ns when controlled by external logic meeting setup/hold timing - no PLL or clock synthesis required.

Does the 71V416S15BE require external refresh circuitry?

No - the 71V416S15BE is a fully static RAM using CMOS latches for storage, eliminating the need for periodic refresh cycles. This simplifies system design, removes refresh-related timing constraints, and guarantees deterministic access latency, making the 71V416S15BE ideal for hard real-time applications like avionics display controllers and industrial motion control.

Can the 71V416S15BE operate reliably at 3.0V supply voltage?

Yes - the 71V416S15BE is fully specified from VDD = 3.0V to 3.6V across commercial (0°C to +70°C) and industrial (–40°C to +85°C) grades. At 3.0V, VOH remains ≥2.4V and VOL ≤0.4V under load, ensuring robust LVTTL signaling margins. The 71V416S15BE maintains tRC = 15ns and all AC parameters within spec at minimum VDD.

How does byte enable (BHE/BLE) functionality work on the 71V416S15BE?

On the 71V416S15BE, BHE (pin A2) and BLE (pin A1) are independent active-low inputs that gate the upper (I/O8–I/O15) and lower (I/O0–I/O7) byte lanes during write cycles. When only BHE is asserted, only high-byte data is written; when only BLE is asserted, only low-byte data is written - enabling atomic 8-bit updates without external masking logic. This behavior is confirmed in the truth table and timing diagrams of the Renesas datasheet.

Is the 71V416S15BE pin-compatible with other members of the 71V416 family?

Yes - the 71V416S15BE shares identical pinout and ball map with other BE48/BEG48-packaged variants (e.g., 71V416S10BE, 71V416L15BEI), differing only in speed grade and temperature rating. Signal assignments, power/ground locations, and control pin functions are invariant across the family, allowing drop-in replacement within same package type when timing and thermal requirements permit.