Renesas 71V416S15BEG8

Overview

71V416S15BEG8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in commercial temperature range (0°C to +70°C) and is packaged in a 48-ball BGA (BEG48, 9 mm × 9 mm).

For engineers reviewing the 71V416S15BEG8 datasheet, 71V416S15BEG8 pinout, 71V416S15BEG8 application, or 71V416S15BEG8 equivalent, key selection criteria include access time consistency (tAA = tRC = 15 ns), low-Z output enable timing (tOE = 7 ns), byte enable control (BHE/BLE), and compatibility with legacy 3.3 V SRAM-based memory subsystems in industrial controllers and communications equipment.

Technical Context

The 71V416S15BEG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing across address, chip select, and output enable paths. Its dual-byte enable architecture (BHE/BLE) enables independent 8-bit access to upper and lower data bytes without external logic.

Timing is guaranteed under LVTTL-compatible voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and operates with 3.0–3.6 V supply tolerance. The device features three distinct power states: dynamic active (ICC = 170 mA max), dynamic standby (ISB = 50 mA max), and full static standby (ISB1 = 20 mA max), all specified at fMAX for 15 ns grade.

Key Specifications

Pinout & Package

71V416S15BEG8 is housed in a 48-ball fine-pitch ball grid array (BEG48) package with 0.8 mm pitch and 9 mm × 9 mm body size. Pinout follows JEDEC-standard center-power/ground configuration to minimize simultaneous switching noise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with 71V416S15BEG8, CY62167EV30LL-45ZSXIT offers lower cost but sacrifices 30 ns of timing margin and byte-select capability, while AS6C4008-55TIN trades density and speed for smaller package size and simplified routing-neither matches the 71V416S15BEG8's combination of 15 ns performance, 16-bit bus, and integrated byte enable control in BGA form factor.

Availability

71V416S15BEG8 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card data caches, and medical imaging frame stores requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for 71V416S15BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416S15BEG8 belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-latency memory expansion in resource-constrained embedded systems requiring pin-compatible upgrade paths from earlier IDT-era devices.

FAQ

What is the maximum operating frequency supported by the 71V416S15BEG8?

The 71V416S15BEG8 does not use a clock and therefore has no maximum operating frequency specification. Its performance is defined by timing parameters: tRC = 15 ns sets the minimum interval between successive read or write cycles, corresponding to an effective throughput ceiling of approximately 66.7 MHz for continuous sequential access. This value is derived directly from the datasheet's AC Electrical Characteristics table for the 71V416S15 speed grade.

Does the 71V416S15BEG8 support both byte and word write operations?

Yes, the 71V416S15BEG8 supports independent byte and word writes via dedicated BHE (high byte enable) and BLE (low byte enable) inputs. When both are asserted low, a full 16-bit word write occurs; asserting only BHE or only BLE enables 8-bit writes to I/O8–I/O15 or I/O0–I/O7 respectively-confirmed in the Truth Table (Table 03) and Functional Block Diagram of the Renesas datasheet.

Is the 71V416S15BEG8 pin-compatible with other members of the 71V416 family?

Yes, the 71V416S15BEG8 shares identical pinout and signal definitions with all BEG48-packaged variants of the 71V416 family-including 71V416S10BEG8 and 71V416L15BEG8-as verified in the Pin Configurations – BGA(1) diagram and Pin Descriptions table. Differences are limited to speed grade (tAA/tRC) and power profile (S vs. L), not pin function or assignment.

What is the input capacitance specification for the 71V416S15BEG8 address and control pins?

The 71V416S15BEG8 specifies CIN = 6 pF maximum for all address and control inputs (A0–A17, CS, WE, OE, BHE, BLE) under TA = +25°C and f = 1.0 MHz conditions, as documented in the BGA Capacitance table (Table 02b). This value is critical for determining trace impedance and fanout limits in high-speed memory bus layouts.

Can the 71V416S15BEG8 operate reliably at 3.0 V supply voltage?

Yes, the 71V416S15BEG8 is fully specified for operation across VDD = 3.0 V to 3.6 V, including DC and AC parameters. The Recommended DC Operating Conditions table (Table 06) explicitly lists 3.0 V as the minimum supply, and all timing values (e.g., tAA = 15 ns) are guaranteed over this full range-not just at nominal 3.3 V-per the "VDD = Min. to Max." condition in the AC Electrical Characteristics section.