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Renesas 71V416S15BEGI8

Part No.:
71V416S15BEGI8
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
Aetrix71V416S15BEGI8.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,622

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Product details

Overview

71V416S15BEGI8 from Renesas Electronics is a 4 Mbit (256K × 16) high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is used in real-time embedded control buffers, FPGA configuration storage, and legacy bus-based data acquisition systems.

For engineers reviewing the 71V416S15BEGI8 datasheet, 71V416S15BEGI8 pinout, 71V416S15BEGI8 application, or 71V416S15BEGI8 equivalent, key selection criteria include its 15 ns tAA/tRC timing, BGA-48 (BEG48) package with 9 mm × 9 mm footprint, dual byte enable (BHE/BLE), and industrial-grade standby current of 50 mA (ISB) and 10 mA (ISB1).

Technical Context

The 71V416S15BEGI8 implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS process optimized for low-noise, high-speed memory access. Its address decoding, sense amplifiers, and bidirectional write drivers are integrated into a single die with separate high- and low-byte I/O paths.

It features three independent control paths: chip-select (CS)-driven, output-enable (OE)-driven, and byte-enable (BHE/BLE)-driven timing, enabling flexible bus arbitration in multiprocessor or shared-memory systems. All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V supply.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4,194,304 bits (256K × 16), supporting 16-bit parallel data bus interfaces without external width expansion.
Access Time (tAA) 15 ns max - defines minimum address hold before valid data appears on I/O pins during read cycles.
Cycle Time (tRC) 15 ns max - sets shortest interval between successive read or write operations on same address.
Supply Voltage 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails; no level-shifting required for LVTTL peripherals.
Standby Current (ISB1) 10 mA max at VDD = 3.6 V, f = 0 - enables ultra-low power retention in sleep-mode systems.
Input Capacitance 6 pF max (BGA package) - reduces loading on address/control buses and improves signal integrity at high speed.
Operating Temperature –40°C to +85°C - qualified for industrial environments including motor drives, PLCs, and telecom line cards.

Pinout & Package

71V416S15BEGI8 is packaged in a 48-ball fine-pitch BGA (BEG48), 9 mm × 9 mm, 0.8 mm ball pitch, RoHS-compliant green variant. Pinout follows JEDEC-standard center-power/ground arrangement to minimize simultaneous switching noise.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; no external address latching needed.
CS Chip Select Active-low global enable; device enters high-Z standby when deasserted, reducing system power.
OE Output Enable Active-low control for output drivers; allows shared bus operation without contention during reads.
WE Write Enable Active-low write strobe; initiates write cycle only when CS and byte enables are also active.
BHE / BLE Byte Enable Inputs Independent 8-bit write masking: BHE controls I/O8–I/O15, BLE controls I/O0–I/O7.
I/O0–I/O15 Bidirectional Data I/O LVTTL-compatible 16-bit data path; direction controlled by WE/CS state, not external transceivers.
VDD Power Supply Single 3.3 V supply pin (two dedicated balls); decoupling required per Renesas layout guidelines.
VSS Ground Ground reference (four dedicated balls); center placement minimizes ground bounce in high-speed operation.

Key Features

Feature Design Value
JEDEC Center Power/Ground Pinout Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS across package center - critical for stable 15 ns timing in dense PCB layouts.
Dual Byte Write Enable (BHE/BLE) Enables partial-word writes without read-modify-write cycles - essential for efficient buffer management in UART/DMA subsystems.
5 ns Output Enable Access (tOE) Allows fast turn-on of outputs after OE assertion - supports burst-mode reads in microcontroller peripheral interfaces.
Low Standby Current (ISB1 = 10 mA) Minimizes quiescent power in always-on industrial controllers where memory remains powered but inactive for extended periods.
Industrial Temperature Range (–40°C to +85°C) Validated operation across full industrial thermal envelope - eliminates derating concerns in uncooled enclosures or outdoor deployments.

Applications

Industrial PLC Data Buffer FPGA Configuration Storage

Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers with deterministic 15 ns memory response.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly to 16-bit microcontroller bus; provides zero-wait-state access during cyclic scan execution.

Use Value: Eliminates need for wait-state insertion or external timing glue logic, maintaining hard real-time determinism under worst-case thermal conditions.

Use Scenario: Holding configuration bitstreams for Xilinx Spartan or Intel MAX II FPGAs during cold-start initialization sequences.

IC Role / Device Role / Timing Role: Non-volatile boot memory replacement; loaded once at power-up and accessed as parallel ROM-like resource.

Use Value: Enables sub-100 ms FPGA configuration with verified 15 ns read timing, avoiding serial PROM bottlenecks in time-critical reconfiguration.

Legacy Bus-Based DAQ System Telecom Line Card Packet Buffer

Use Scenario: Acting as circular buffer for analog-to-digital conversion results in PCI/ISA-based data acquisition hardware operating at 10+ MS/s aggregate throughput.

IC Role / Device Role / Timing Role: High-speed dual-port-capable memory accessed via ISA bus controller with byte-enable granularity for channel-specific data tagging.

Use Value: Supports concurrent ADC sampling and host CPU readout using BLE/BHE to isolate channel data without software overhead.

Use Scenario: Temporary storage of voice/data packets in TDM-over-IP gateway line cards requiring jitter-free buffering between framing engine and packet processor.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for time-sensitive packet assembly/disassembly; synchronized to 8 kHz TDM clock domain.

Use Value: Guarantees 15 ns read/write turnaround - prevents buffer underrun/overrun in 2 ms frame windows under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-15ZSXI 256K × 16, 15 ns, 3.3 V, SOIC-44 package - lacks BGA option and byte-enable timing optimization. Preferred for through-hole prototyping or space-constrained SOIC layouts; not suitable for high-density BGA routing. Select when board-level rework or manual soldering is required; verify tBE/tBLZ timing margins match system bus protocol.
AS6C4008-15TIN 256K × 16, 15 ns, 3.3 V, TSOP-II-44 - higher ISB1 (25 mA) and no industrial temp grade in this speed bin. Used in commercial-grade instrumentation where ambient temperature stays below +70°C. Choose for cost-sensitive commercial designs with relaxed thermal requirements; confirm VIL/VIH compatibility with host controller.

Compared with 71V416S15BEGI8, CY62167EV30LL-15ZSXI offers identical timing but requires PCB redesign for SOIC footprint, while AS6C4008-15TIN trades industrial qualification and lower standby power for lower unit cost in non-ruggedized applications.

Availability

71V416S15BEGI8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration storage, and legacy bus-based data acquisition systems requiring stable component supply across extended product lifecycles.

Supply support for 71V416S15BEGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71V416S15BEGI8 belongs to Renesas' legacy high-speed parallel SRAM product line, engineered for deterministic, low-latency memory access in real-time embedded systems without refresh or clock management overhead.

FAQ

What is the maximum operating frequency supported by the 71V416S15BEGI8?

The 71V416S15BEGI8 does not operate on a clock signal-it is a fully static asynchronous SRAM. Its maximum effective throughput is determined by its 15 ns read/write cycle time (tRC), enabling up to 66.7 MHz sustained random access rate. This is achieved without clocks, PLLs, or refresh circuitry, making it ideal for systems requiring guaranteed latency bounds.

Does the 71V416S15BEGI8 require external pull-up resistors on its control pins?

No, the 71V416S15BEGI8 has internally biased inputs meeting LVTTL thresholds; external pull-ups are not required for CS, OE, WE, BHE, or BLE under normal operation. However, Renesas recommends weak (10 kΩ) pull-downs on OE and WE in floating-bus scenarios to prevent spurious writes or output contention during power-up sequencing.

Can the 71V416S15BEGI8 be used with a 5 V microcontroller bus interface?

No-the 71V416S15BEGI8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V at VDD = 3.0 V. Direct connection to 5 V logic violates ratings and risks damage. Level translation (e.g., TXB0108 or discrete MOSFET translators) is mandatory for interoperability.

What is the ball-out configuration for the BEG48 package of the 71V416S15BEGI8?

The 71V416S15BEGI8 uses the BEG48 48-ball grid array with 0.8 mm pitch and 9 mm × 9 mm body. Ball A1 is NC (no connect), and VDD/VSS are distributed across central rows (e.g., D3/D4/E3/E4 for VDD; C2/C3/D2/E2 for VSS) per Renesas PBG44/PHG44/BEG48 pin mapping documentation. Full layout files are available in Renesas' SLP-0010B package drawing.

How does the 71V416S15BEGI8 handle simultaneous access conflicts between byte and word operations?

71V416S15BEGI8 resolves conflicts via priority encoding: when both BHE and BLE are low, full 16-bit word access occurs; if only one is low, the corresponding byte is written or read while the other remains high-Z. The internal decoder ensures no bus contention-outputs enter high-impedance state within 5 ns (tOHZ) when control signals change, preventing data corruption during mode transitions.

71V416S15BEGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

71V416S15BEGI8 FAQ

1.How can I place an order for 71V416S15BEGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V416S15BEGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V416S15BEGI8 reliable?

The price and inventory of 71V416S15BEGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S15BEGI8 is usually 5 days.

3.What payment methods are accepted for 71V416S15BEGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S15BEGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V416S15BEGI8?

71V416S15BEGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V416S15BEGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V416S15BEGI8?

For technical support, including 71V416S15BEGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S15BEGI8 requirements.

6.How does Aetrix verify that 71V416S15BEGI8 is sourced from the original manufacturer or authorized distributors?

All 71V416S15BEGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S15BEGI8 meets industry standards.

7.What is the process for return or replacement of 71V416S15BEGI8?

All 71V416S15BEGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S15BEGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V416S15BEGI8 part is unused and in its original packaging.

Return procedure for 71V416S15BEGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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