Renesas 71V416S15BEI

Overview

71V416S15BEI from Renesas Electronics is a 4 Mbit (256K × 16) high-speed CMOS static RAM with 15 ns read/write cycle time, single 3.3 V supply operation, and industrial temperature range (–40°C to +85°C). It features separate byte enable pins (BHE/BLE), LVTTL-compatible I/Os, and JEDEC-standard center power/ground pinout for noise reduction - deployed in embedded controllers, industrial PLCs, and legacy telecom interface buffers.

For engineers reviewing the 71V416S15BEI datasheet, 71V416S15BEI pinout, 71V416S15BEI application, or 71V416S15BEI equivalent, key selection criteria include access time consistency (tAA = tACS = 15 ns), low-impedance output timing (tOLZ = 0 ns), standby current (ISB1 = 20 mA max), and BGA-48 package compatibility with board-level thermal and routing constraints.

Technical Context

The 71V416S15BEI implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual-byte write control (BHE/BLE) to support 8-bit sub-word writes without external logic. Its address decoding is internal and non-multiplexed, with A0–A17 directly mapped to 256K word lines.

Operation relies on three independent enable paths: chip select (CS) for device activation, output enable (OE) for tri-state control of I/Os, and write enable (WE) combined with BHE/BLE to gate data flow direction and byte granularity-enabling simultaneous high- and low-byte reads or writes under distinct control signals.

Key Specifications

Pinout & Package

71V416S15BEI is housed in a 48-ball fine-pitch CABGA (BE48) package with 9 mm × 9 mm footprint and 0.8 mm ball pitch. Pin functions follow JEDEC-standard layout with VDD/VSS distributed across center rows for reduced ground bounce and EMI.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with 71V416S15BEI, CY62167EV30LL-45ZSXI trades 30 ns slower access for broader distributor stock and SOIC ease-of-handling, while AS6C4008-15TIN matches speed but constrains packaging flexibility - making 71V416S15BEI optimal for new BGA-based designs demanding industrial-grade 15 ns performance.

Availability

71V416S15BEI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended product lifecycles.

Supply support for 71V416S15BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V416 family was designed as high-reliability, pin-compatible parallel SRAMs targeting legacy and long-lifecycle embedded systems requiring deterministic timing, industrial temperature operation, and JEDEC-compliant noise control.

FAQ

What is the maximum operating frequency supported by the 71V416S15BEI?

The 71V416S15BEI does not operate on a clock; it is an asynchronous SRAM. Its timing is defined by access and cycle times - specifically, tRC = 15 ns, corresponding to a maximum effective throughput of 66.7 MHz for consecutive random accesses. System-level bandwidth depends on bus arbitration and controller overhead, not an internal clock.

Does the 71V416S15BEI require external pull-up resistors on its control pins?

No, the 71V416S15BEI has internally biased inputs meeting LVTTL thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), so external pull-ups are unnecessary for CS, OE, WE, BHE, or BLE under standard 3.3 V rail conditions. Pull-ups may be added only for fail-safe default states in safety-critical power-up sequencing.

Can the 71V416S15BEI be used with a 5 V microcontroller bus interface?

No - the 71V416S15BEI is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH min is 2.0 V. Direct connection to 5 V logic violates voltage ratings and risks damage. Level translation (e.g., TXB0108 or discrete MOSFET translators) is mandatory for 5 V host interfaces.

What is the meaning of "BEI" in the part number 71V416S15BEI?

In 71V416S15BEI, "BE" denotes the 48-ball CABGA package (BE48), "I" specifies the industrial temperature grade (–40°C to +85°C), and "S15" indicates the standard-power variant with 15 ns speed grade. The full ordering code confirms this device is a 3.3 V, industrial-temp, 15 ns, BGA-packaged SRAM.

How does the 71V416S15BEI handle byte-wide writes without corrupting adjacent data?

The 71V416S15BEI uses dedicated BHE (high byte) and BLE (low byte) inputs to independently gate write operations to I/O8–I/O15 or I/O0–I/O7. When only one byte enable is asserted with WE active, only that 8-bit segment is written; the other remains unchanged - enabling true partial-word writes without read-modify-write sequences.