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Renesas 71V416S15YG8
- Part No.:
- 71V416S15YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V416S15YG8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,923
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Product details
Overview
71V416S15YG8 from Renesas Electronics is a 4 Mbit (256K × 16) high-speed CMOS static RAM with 3.3 V single-supply operation, 15 ns read/write cycle time, JEDEC-compliant center-power/ground pinout, and LVTTL-compatible bidirectional I/O. It serves as a non-refreshing, fully static memory buffer in embedded controllers, networking packet buffers, and industrial PLC data stacks.
For engineers reviewing the 71V416S15YG8 datasheet, 71V416S15YG8 pinout, 71V416S15YG8 application, or 71V416S15YG8 equivalent, key selection criteria include access timing (tAA = 15 ns), byte-enable control (BHE/BLE), SOJ-44 package compatibility, and commercial-grade temperature range (0°C to +70°C).
Technical Context
The 71V416S15YG8 implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS fabrication for stable operation across voltage (3.0–3.6 V) and temperature (0°C to +70°C). Its dual-byte enable (BHE/BLE) and separate chip select (CS) and output enable (OE) pins support flexible memory mapping and partial-word access.
Timing is defined by three independent control paths: CS-controlled, OE-controlled, and byte-enable-controlled write cycles. All I/Os are LVTTL-compatible with VIH ≥ 2.0 V, VIL ≤ 0.8 V, and guaranteed tOHZ ≤ 7 ns, enabling direct interfacing with 3.3 V microcontrollers and FPGAs without level translation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16), supporting 16-bit parallel data bus architectures |
| Access Time (tAA) | 15 ns max - determines minimum address hold before valid data appears on I/O lines |
| Read Cycle Time (tRC) | 15 ns max - sets shortest interval between successive read operations |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V logic rails; no external regulation needed |
| Operating Temperature | 0°C to +70°C - qualified for commercial-grade embedded systems and communications equipment |
| I/O Interface | LVTTL-compatible - ensures interoperability with 3.3 V ASICs, FPGAs, and microprocessors |
| Power Dissipation | ISB1 ≤ 20 mA (full standby), ICC ≤ 170 mA (dynamic, fMAX) - enables low-heat memory subsystems |
Pinout & Package
71V416S15YG8 is packaged in a 44-pin, 400-mil plastic SOJ (PBG44) with JEDEC-standard center-power/ground layout for reduced switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| CS | Chip Select | Active-low enable controlling device selection; must be low for any read/write operation |
| OE | Output Enable | Active-low control of output drivers; allows shared bus operation without contention |
| WE | Write Enable | Active-low signal initiating write cycles; combined with BHE/BLE for byte-select writes |
| BHE, BLE | Byte Enable | Independent high- and low-byte controls enabling 8-bit partial writes without masking logic |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; direction controlled by WE, CS, and OE states per truth table |
| VDD | Power Supply | 3.3 V supply pin (pins 13 & 32); center-positioned to minimize IR drop and noise coupling |
| VSS | Ground | Ground reference (pins 11 & 34); symmetric placement reduces ground bounce in high-speed operation |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) and improves signal integrity in dense PCB layouts |
| Dual Byte Enable (BHE/BLE) | Enables independent 8-bit writes to upper or lower byte without external gating logic |
| Equal Access & Cycle Times | 15 ns tAA = tRC ensures deterministic timing for real-time memory access scheduling |
| Low-Z Output Enable (tOLZ = 0 ns) | Eliminates output delay uncertainty during read bursts, critical for synchronous bus protocols |
| Full Standby Current (ISB1 ≤ 20 mA) | Supports low-power sleep modes in battery-backed or energy-conscious systems |
Applications
| Industrial PLC Data Stack | Networking Packet Buffer |
|---|---|
Use Scenario: Storing transient process variables and I/O image tables in programmable logic controllers operating in factory automation environments. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding real-time status registers and configuration data with deterministic 15 ns access. Use Value: Eliminates need for external refresh circuitry and supports deterministic scan-cycle timing under 1 ms PLC scan intervals. | Use Scenario: Temporary storage of Ethernet frames in Layer 2 switches before forwarding or filtering decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly with MAC-layer logic via 16-bit LVTTL bus. Use Value: Enables full-duplex frame buffering at 100 Mbps line rate with zero wait-state reads/writes. |
| Embedded Controller Boot Memory | DSP Code/Data Cache |
Use Scenario: Hosting boot firmware and runtime configuration tables in automotive body control modules requiring fast startup. IC Role / Device Role / Timing Role: XIP-capable SRAM mapped into processor's reset vector space with 15 ns tAA guaranteeing sub-200 ns instruction fetch latency. Use Value: Reduces boot time by >30% versus flash-based alternatives while maintaining code execution stability. | Use Scenario: Off-chip cache extension for fixed-point DSPs performing real-time audio processing in telecom baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed concurrently by multiple functional units via byte-enable granularity. Use Value: Sustains 120+ MIPS effective throughput by avoiding pipeline stalls during coefficient table lookups. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-15TIN | 4 Mbit (512K × 8), 15 ns, 3.3 V, SOJ-32 - narrower 8-bit bus, different pin count and layout | Requires bus-width adaptation (e.g., two devices or glue logic) for 16-bit systems | Select only when 8-bit interface suffices and PCB layout accommodates SOJ-32 footprint |
| IS61LV25616AL-15TQLI | 4 Mbit (256K × 16), 15 ns, 3.3 V, TSOP-44 - identical density/timing but TSOP-II package | No SOJ socket compatibility; requires rework of mounting and thermal management | Preferred for new designs targeting surface-mount reliability and higher I/O density |
Compared with 71V416S15YG8, AS6C4008-15TIN requires system-level bus widening, while IS61LV25616AL-15TQLI offers identical electrical behavior but mandates TSOP-44 board layout changes-neither is pin-compatible, and both require validation of byte-enable timing and power sequencing.
Availability
71V416S15YG8 is available at Aetrix Electronics and suitable for industrial PLC data stacks, networking packet buffers, and embedded controller boot memory requiring stable component supply, long-term lifecycle assurance, and commercial-temperature qualification.
Supply support for 71V416S15YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V416S15YG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in resource-constrained embedded systems where refresh-free operation and LVTTL compatibility are essential.
FAQ
What is the maximum clock frequency supported by the 71V416S15YG8?
The 71V416S15YG8 is a fully static asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by timing parameters-not frequency-including tRC = 15 ns read cycle time and tWC = 15 ns write cycle time. This enables reliable operation in systems where bus timing is controlled by external logic or microcontroller GPIO strobes rather than a dedicated memory clock.
Does the 71V416S15YG8 support partial-word writes without external logic?
Yes, the 71V416S15YG8 supports partial-word writes natively via its dedicated BHE (high byte enable) and BLE (low byte enable) inputs. When only BHE is asserted low (with BLE high), only I/O8–I/O15 are written; when only BLE is low, only I/O0–I/O7 are written. This eliminates the need for external byte-mask gates or FPGA logic resources in 16-bit systems requiring 8-bit updates.
What is the meaning of the 'YG8' suffix in 71V416S15YG8?
The 'YG8' suffix in 71V416S15YG8 decodes as follows: 'Y' indicates the PBG44 (44-pin, 400-mil plastic SOJ) package; 'G' denotes tape-and-reel packaging; and '8' specifies RoHS-compliant, lead-free, green material content. This ordering code confirms the device is supplied in reel format, ready for automated SMT assembly, and meets environmental compliance requirements.
Can the 71V416S15YG8 operate reliably at 3.0 V supply voltage?
Yes, the 71V416S15YG8 is fully specified over a 3.0 V to 3.6 V supply range. DC electrical characteristics-including VOL ≤ 0.4 V at IOL = 8 mA and VOH ≥ 2.4 V at IOH = −4 mA-are guaranteed at VDD = 3.0 V (minimum), ensuring robust LVTTL signal levels and timing margins even under worst-case voltage droop conditions in production systems.
Is the 71V416S15YG8 pin-compatible with earlier IDT versions?
Yes, the 71V416S15YG8 maintains full pin-to-pin and functional compatibility with the original Integrated Device Technology (IDT) 71V416S15YG8, as confirmed by Renesas' rebranding documentation and identical SOJ-44 pinout, timing specifications, and AC/DC parameter tables. No PCB or firmware changes are required when migrating from IDT-sourced units to current Renesas-manufactured 71V416S15YG8.
71V416S15YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
71V416S15YG8 FAQ
1.How can I place an order for 71V416S15YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V416S15YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V416S15YG8 reliable?
The price and inventory of 71V416S15YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V416S15YG8 is usually 5 days.
3.What payment methods are accepted for 71V416S15YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V416S15YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V416S15YG8?
71V416S15YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V416S15YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V416S15YG8?
For technical support, including 71V416S15YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V416S15YG8 requirements.
6.How does Aetrix verify that 71V416S15YG8 is sourced from the original manufacturer or authorized distributors?
All 71V416S15YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V416S15YG8 meets industry standards.
7.What is the process for return or replacement of 71V416S15YG8?
All 71V416S15YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V416S15YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V416S15YG8 part is unused and in its original packaging.
Return procedure for 71V416S15YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V416S15YG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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