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Renesas 71V424S10PHG8

Part No.:
71V424S10PHG8
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
Aetrix71V424S10PHG8.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,866

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Product details

Overview

71V424S10PHG8 from Renesas Electronics is a 4-Mbit (512K × 8) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, TTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It serves as main or cache memory in embedded controllers, network interface cards, and real-time data buffering systems requiring deterministic low-latency read/write cycles.

For engineers reviewing the 71V424S10PHG8 datasheet, 71V424S10PHG8 pinout, 71V424S10PHG8 application, or 71V424S10PHG8 equivalent, this page delivers verified timing parameters, package-specific terminal roles, industrial-grade thermal performance, and direct alternative options for memory subsystem redesign or BOM optimization.

Technical Context

The 71V424S10PHG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS fabrication to achieve 10 ns address access time (tAA), 10 ns read cycle time (tRC), and 5 ns output enable delay (tOE). Its dual control architecture supports both chip-select–driven and output-enable–driven read cycles, enabling flexible bus arbitration in multi-master systems.

All 8 bidirectional I/O lines (I/O0–I/O7) operate at TTL voltage levels with guaranteed VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA under worst-case VDD = 3.0 V. Standby current is 20 mA (ISB1) in full static mode, and dynamic operating current is 180 mA at fMAX under commercial temperature conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4,194,304 bits (512K × 8) - supports byte-wide data paths without external multiplexing
Access Time (tAA) 10 ns max - enables CPU interface at ≤100 MHz sustained burst rates
Supply Voltage 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and LDO-regulated power domains
I/O Compatibility TTL-level - interoperable with legacy microcontrollers, FPGAs, and ASICs without level-shifting
Operating Temperature 0°C to +70°C (Commercial grade) - validated for office, telecom, and industrial control environments
Package Type 44-pin TSOP Type II (PHG44), 400 mil width - surface-mount compatible with automated PCB assembly
Standby Current (ISB1) 20 mA max - reduces idle power in always-on buffer applications

Pinout & Package

71V424S10PHG8 is housed in a 44-pin, 400 mil TSOP Type II (PHG44) package with JEDEC-compliant center-power/ground pinout for minimized switching noise and improved signal integrity.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit address bus supporting full 512K-word addressing; no internal latching required
CS Chip Select Active-low enable controlling device selection on shared data buses; tACS = 10 ns max
WE Write Enable Active-low write strobe; controls data flow direction and memory cell write activation
OE Output Enable Active-low output driver control; allows read data to appear on I/O pins within 5 ns (tOE)
I/O0–I/O7 Bidirectional Data I/O 8-bit TTL-compatible data path; high-impedance state when CS or OE inactive
VDD Power Supply 3.3 V core supply; center-placed for reduced power plane inductance and noise coupling
VSS Ground Signal and power ground reference; center-placed adjacent to VDD per JEDEC standard
NC No Connect Pins 2, 3, 23, 24, 25, 26, 27, 32 - electrically isolated; must remain unconnected

Key Features

Feature Design Value
JEDEC Center Power/Ground Pinout Reduces simultaneous switching noise by symmetrically distributing VDD/VSS across the package center
Equal Access & Cycle Times 10 ns tAA = tRC - eliminates timing margin uncertainty between read setup and cycle completion
Low-Power Standby Mode ISB1 = 20 mA max - maintains data retention while minimizing quiescent current in sleep states
TTL-Compatible I/O VOH ≥ 2.4 V / VOL ≤ 0.4 V at rated loads - ensures reliable interfacing with legacy 5 V-tolerant or mixed-voltage systems
Single 3.3 V Supply Eliminates need for dual-rail regulators or level shifters in modern low-voltage embedded designs

Applications

Network Interface Buffering Industrial PLC Data Logging

Use Scenario: Storing packet headers and metadata in Ethernet switch ASICs before forwarding decisions.

IC Role / Device Role / Timing Role: Byte-accessible, low-latency scratchpad memory for real-time frame inspection and classification.

Use Value: 10 ns tAA enables sub-microsecond header lookup latency, critical for line-rate 1 Gbps packet processing.

Use Scenario: Capturing sensor timestamps and analog-to-digital conversion results in programmable logic controllers during cyclic scan execution.

IC Role / Device Role / Timing Role: Non-refreshing, deterministic-access memory for deterministic scan-cycle data capture.

Use Value: Fully static operation guarantees zero data loss during CPU interrupts or watchdog resets common in industrial runtime environments.

Medical Imaging Frame Buffer Automotive ADAS Preprocessing Cache

Use Scenario: Holding intermediate pixel data during real-time ultrasound image reconstruction pipelines.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer between ADC front-end and DSP back-end.

Use Value: 180 mA ICC at fMAX supports sustained 100 MB/s read/write throughput required for 12-bit, 40 MHz sampling streams.

Use Scenario: Caching radar point-cloud segments prior to fusion with camera inputs in automotive domain controllers.

IC Role / Device Role / Timing Role: Deterministic-access local memory for time-critical preprocessing kernels running on RISC-V or ARM cores.

Use Value: Commercial-grade 0°C to +70°C rating aligns with cabin-located ECU thermal profiles and avoids over-spec'ing for non-under-hood modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62148EV30LL-10ZSXI 512K × 8, 10 ns, 3.3 V, 44-pin TSOP; lower ISB1 (15 mA) but higher tCHZ (8 ns) Better standby efficiency in battery-backed systems; slower output disable may limit bus turnaround in high-frequency burst reads Select when lowest static power dominates over bus release timing constraints
AS6C4008-10TIN 512K × 8, 10 ns, 3.3 V, 44-pin TSOP; wider VDD range (2.7–3.6 V), higher input capacitance (10 pF) Enhanced supply tolerance suits brown-out-prone automotive power domains; added input loading affects high-speed trace routing Select when system-level VDD regulation margin is insufficient for strict 3.0–3.6 V spec of 71V424S10PHG8

Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the 71V424S10PHG8 offers tighter tCHZ (7 ns) and JEDEC-optimized pinout for noise-sensitive applications, while maintaining industry-standard timing compatibility and commercial-temperature reliability for cost-sensitive embedded designs.

Availability

71V424S10PHG8 is available at Aetrix Electronics and suitable for network interface buffering, industrial PLC data logging, and medical imaging frame buffering requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 71V424S10PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V424S10PHG8 belongs to Renesas' legacy high-speed SRAM product line, engineered for deterministic, low-latency memory access in resource-constrained embedded systems where refresh-free operation and TTL compatibility are essential.

FAQ

What is the maximum clock frequency supported by the 71V424S10PHG8?

The 71V424S10PHG8 is an asynchronous SRAM and does not use a clock signal. Its maximum operational speed is defined by timing parameters: 10 ns read cycle time (tRC) and 10 ns address access time (tAA), enabling reliable interface with microprocessors or FPGAs operating up to 100 MHz bus frequencies under appropriate setup/hold conditions.

Does the 71V424S10PHG8 require refresh circuitry?

No, the 71V424S10PHG8 is a fully static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as VDD remains within specification and CS is asserted during active access - a key advantage over DRAM in deterministic real-time systems.

What is the meaning of "PHG8" in the part number 71V424S10PHG8?

In 71V424S10PHG8, "PHG" denotes the 44-pin TSOP Type II package (PHG44), and "8" indicates tape-and-reel packaging format per JEDEC standards. The "S" identifies the standard power variant, and "10" specifies the 10 ns speed grade - all confirmed in Renesas' official ordering information tables.

Can the 71V424S10PHG8 operate at 2.5 V?

No. The 71V424S10PHG8 is specified only for 3.3 V operation, with absolute minimum VDD = 3.0 V and maximum = 3.6 V. Operation below 3.0 V violates DC operating conditions and risks data corruption, timing violations, or failure to drive TTL-compatible outputs reliably.

Is the 71V424S10PHG8 pin-compatible with the 71V424L10PHG8?

Yes - both 71V424S10PHG8 and 71V424L10PHG8 share identical 44-pin TSOP (PHG44) packaging, pinout, and functional interface. The sole difference is power profile: "S" denotes standard power (180 mA ICC), while "L" denotes low power (165 mA ICC); no PCB changes are required for substitution in most thermal- and timing-margin-sufficient designs.

71V424S10PHG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

71V424S10PHG8 FAQ

1.How can I place an order for 71V424S10PHG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V424S10PHG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V424S10PHG8 reliable?

The price and inventory of 71V424S10PHG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V424S10PHG8 is usually 5 days.

3.What payment methods are accepted for 71V424S10PHG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V424S10PHG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V424S10PHG8?

71V424S10PHG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V424S10PHG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V424S10PHG8?

For technical support, including 71V424S10PHG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V424S10PHG8 requirements.

6.How does Aetrix verify that 71V424S10PHG8 is sourced from the original manufacturer or authorized distributors?

All 71V424S10PHG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V424S10PHG8 meets industry standards.

7.What is the process for return or replacement of 71V424S10PHG8?

All 71V424S10PHG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V424S10PHG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V424S10PHG8 part is unused and in its original packaging.

Return procedure for 71V424S10PHG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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