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Renesas 71V424S10PHGI8

Part No.:
71V424S10PHGI8
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
Aetrix71V424S10PHGI8.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,976

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Product details

Overview

71V424S10PHGI8 from Renesas Electronics is a 4-Mbit (512K × 8) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, and industrial temperature range (–40°C to +85°C). It features TTL-compatible bidirectional I/O, JEDEC-standard center power/ground pinout for noise reduction, and low-power standby modes. It serves as main or buffer memory in real-time embedded controllers requiring deterministic, clockless data access.

For engineers reviewing the 71V424S10PHGI8 datasheet, 71V424S10PHGI8 pinout, 71V424S10PHGI8 application, or 71V424S10PHGI8 equivalent, key selection criteria include its 10 ns read cycle time, 36-pin SOJ vs. 44-pin TSOP package options, industrial-grade reliability, and compatibility with legacy 3.3 V SRAM-based memory subsystems in avionics and industrial PLCs.

Technical Context

The 71V424S10PHGI8 implements fully static asynchronous logic-no clocks or refresh required-and uses dual-control enable architecture with independent Chip Select (CS) and Output Enable (OE) inputs. Its address decoding supports 19-bit addressing (A0–A18), enabling direct mapping of 512K × 8-bit memory space without external latching.

It delivers guaranteed 10 ns address access time (tAA) and 10 ns read cycle time (tRC) under industrial conditions (VDD = 3.0–3.6 V, TA = –40°C to +85°C), with output enable propagation delay ≤5 ns (tOE) and chip deselect-to-high-Z ≤7 ns (tCHZ). Power management includes three distinct current states: dynamic active (180 mA max), dynamic standby (60 mA max), and full static standby (20 mA max).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4,194,304 bits (512K × 8) - supports byte-wide data bus interfacing without multiplexing
Access Time 10 ns (tAA) - enables sub-100 MHz synchronous bus handshaking in microcontroller co-processor systems
Supply Voltage 3.3 V ±10% - compatible with standard LVTTL and LVCMOS I/O domains without level translation
Operating Temperature –40°C to +85°C - qualified for industrial control, railway signaling, and outdoor telecom equipment
Package 44-pin TSOP Type II (PHG44) - surface-mount footprint with 0.8 mm pitch, optimized for high-density PCB layouts
Power Modes Three-tier current control: 180 mA active, 60 mA dynamic standby, 20 mA full static standby - reduces system-level thermal load during idle intervals
I/O Compatibility TTL-compatible inputs/outputs - interfaces directly with 3.3 V microcontrollers (e.g., Renesas RX, SH, RZ families) and FPGAs

Pinout & Package

44-pin, 400 mil TSOP Type II (PHG44) package with standard JEDEC pinout. Center-aligned VDD (Pin 22) and VSS (Pin 23) reduce simultaneous switching noise (SSN) in high-speed memory buses.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit unidirectional address bus; supports full 512K-word addressing without external address latches
CS Chip Select Active-low enable; controls device activation and entry into low-power standby (ISB1) when deasserted
OE Output Enable Active-low control for output drivers; allows shared data bus operation with other peripherals without contention
WE Write Enable Active-low write strobe; defines write cycle timing boundaries (tWP, tDW) and disables outputs during writes
I/O0–I/O7 Bidirectional Data I/O 8-bit TTL-compatible data path; direction controlled implicitly by CS/OE/WE state per truth table
VDD Power Supply 3.3 V core supply (Pin 22); center placement minimizes IR drop and improves signal integrity on dense boards
VSS Ground Ground reference (Pin 23); adjacent to VDD for optimal decoupling and reduced ground bounce

Key Features

Feature Design Value
JEDEC Center Power/Ground Pinout Reduces simultaneous switching noise by 30–40% compared to corner-placed VDD/VSS layouts in multi-SRAM systems
Equal Access & Cycle Times 10 ns tAA = tRC - eliminates wait-state insertion in fixed-cycle memory controllers (e.g., Motorola 68K derivatives)
Low-Power Standby Modes 20 mA ISB1 (full static) enables >90% power reduction during CPU sleep without data loss or refresh overhead
TTL-Compatible I/O Direct interface with legacy 3.3 V microcontrollers and ASICs; no level-shifter required for voltage domain bridging
Industrial Temperature Range Validated operation from –40°C to +85°C ensures reliability in uncontrolled environments like factory floors and vehicle ECUs

Applications

Industrial PLC Memory Buffer Railway Signaling Data Cache

Use Scenario: Stores real-time I/O status and motion control parameters in programmable logic controllers operating in dusty, vibration-prone factory environments.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing zero-wait-state access to ladder logic execution engine and fieldbus interface buffers.

Use Value: 10 ns access time ensures deterministic response to emergency stop interrupts; industrial temp rating guarantees uptime across seasonal ambient swings.

Use Scenario: Caches track occupancy and signal state data in ERTMS/ETCS Level 1 balise readers mounted on rail vehicles exposed to wide thermal cycling.

IC Role / Device Role / Timing Role: Nonvolatile-supporting volatile memory holding transient safety-critical telemetry between GPS updates and radio transmission cycles.

Use Value: Full static standby (20 mA ISB1) extends battery backup runtime during power interruptions; TSOP package withstands mechanical shock per EN 50155.

Avionics Display Frame Buffer Medical Imaging Preprocessing Buffer

Use Scenario: Holds pixel data for cockpit multifunction displays in commercial aircraft where EMI resilience and thermal stability are critical.

IC Role / Device Role / Timing Role: High-reliability SRAM acting as frame buffer between graphics controller and display serializer, synchronized via discrete handshaking.

Use Value: Center VDD/VSS pinout suppresses radiated emissions in RF-sensitive zones; 3.3 V operation aligns with DO-254 power domain requirements.

Use Scenario: Buffers raw sensor data from ultrasound transducer arrays prior to FPGA-based beamforming in portable diagnostic devices.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory enabling pipelined processing of 12-bit echo samples at >20 MSPS aggregate throughput.

Use Value: 10 ns tAA supports burst-mode DMA transfers without cycle stealing; industrial temp range accommodates sterilization and clinical ambient variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62148EV30LL-10ZSXIT 512K × 8, 10 ns, 3.3 V, 44-pin TSOP; lower ISB1 (5 µA vs. 20 mA) but higher tCHZ (10 ns vs. 7 ns) Better suited for ultra-low-power battery-backed systems; less ideal for high-speed bus arbitration due to slower high-Z transition Select when standby current dominates thermal budget; verify tCHZ meets system bus release timing.
AS6C4008-10TIN 512K × 8, 10 ns, 3.3 V, 44-pin TSOP; identical tAA/tRC but lacks OE pin (single CS-only control) Requires redesign of bus arbitration logic; not drop-in for systems using OE for shared-data-bus tri-state control Choose only if existing design already omits OE usage; otherwise, avoid due to functional mismatch in I/O control.

Compared with CY62148EV30LL-10ZSXIT and AS6C4008-10TIN, the 71V424S10PHGI8 provides balanced performance: faster output disable (tCHZ = 7 ns), robust industrial qualification, and dedicated OE support-making it optimal for deterministic real-time systems where bus timing predictability and environmental resilience are non-negotiable.

Availability

71V424S10PHGI8 is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling units, avionics displays, and medical imaging subsystems requiring stable component supply across extended product lifecycles.

Supply support for 71V424S10PHGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V424S10PHGI8 belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-latency memory interfacing in mission-critical embedded systems where clockless operation and industrial-grade reliability are mandatory.

FAQ

What is the operating temperature range for the 71V424S10PHGI8?

The 71V424S10PHGI8 is rated for industrial temperature operation from –40°C to +85°C. This specification is validated across all AC and DC electrical parameters in the datasheet, including 10 ns access time and full standby current (ISB1 = 20 mA), making it suitable for deployment in harsh environments such as factory automation and transportation systems.

Does the 71V424S10PHGI8 require a refresh circuit or clock signal?

No, the 71V424S10PHGI8 is a fully static RAM and requires neither refresh circuitry nor a clock signal. Its asynchronous design relies solely on address, CS, OE, and WE transitions to control read/write operations-enabling seamless integration with microcontrollers, FPGAs, and ASICs lacking dedicated memory controllers.

What package type does the 71V424S10PHGI8 use, and is it RoHS-compliant?

The 71V424S10PHGI8 uses a 44-pin TSOP Type II (PHG44) package with 0.8 mm lead pitch. Per Renesas' ordering information and datasheet revision history (May 2021), this part is marked "Green", confirming compliance with RoHS Directive 2011/65/EU and absence of restricted hazardous substances.

How does the JEDEC center power/ground pinout improve noise performance in the 71V424S10PHGI8?

The 71V424S10PHGI8 places VDD (Pin 22) and VSS (Pin 23) adjacent and centered in the 44-pin TSOP array. This layout minimizes loop inductance and ground bounce during simultaneous I/O switching, reducing SSN by up to 40% versus corner-placed power pins-critical for stable operation in high-density memory subsystems.

Can the 71V424S10PHGI8 be used as a direct replacement for older IDT 71V424 variants?

Yes-the 71V424S10PHGI8 maintains pin-for-pin and function-for-function compatibility with earlier IDT-branded 71V424S10PHGI8 units, including identical AC/DC specifications, timing waveforms, and truth table behavior. Renesas retained full backward compatibility after acquiring IDT's memory portfolio in 2019.

71V424S10PHGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

71V424S10PHGI8 FAQ

1.How can I place an order for 71V424S10PHGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V424S10PHGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V424S10PHGI8 reliable?

The price and inventory of 71V424S10PHGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V424S10PHGI8 is usually 5 days.

3.What payment methods are accepted for 71V424S10PHGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V424S10PHGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V424S10PHGI8?

71V424S10PHGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V424S10PHGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V424S10PHGI8?

For technical support, including 71V424S10PHGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V424S10PHGI8 requirements.

6.How does Aetrix verify that 71V424S10PHGI8 is sourced from the original manufacturer or authorized distributors?

All 71V424S10PHGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V424S10PHGI8 meets industry standards.

7.What is the process for return or replacement of 71V424S10PHGI8?

All 71V424S10PHGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V424S10PHGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V424S10PHGI8 part is unused and in its original packaging.

Return procedure for 71V424S10PHGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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