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Renesas 71V424S10YG
- Part No.:
- 71V424S10YG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V424S10YG.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:156
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Product details
Overview
71V424S10YG from Renesas Electronics is a 4-Mbit (512K × 8) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, JEDEC-compliant center-power/ground pinout, and TTL-compatible bidirectional I/O. It serves as main or cache memory in embedded controllers, network interface cards, and real-time data buffering systems requiring deterministic latency.
For engineers reviewing the 71V424S10YG datasheet, 71V424S10YG pinout, 71V424S10YG application, or 71V424S10YG equivalent, this page delivers verified timing parameters, SOJ-36 package layout, industrial-grade DC/AC electrical specs, and validated alternatives for memory subsystem design and BOM optimization.
Technical Context
The 71V424S10YG implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS process technology to achieve 10 ns address access time (tAA), 10 ns read cycle time (tRC), and 5 ns output enable delay (tOE). Its dual-control write logic supports both WE-controlled and CS-controlled timing modes.
It features separate Chip Select (CS) and Output Enable (OE) inputs enabling flexible bus arbitration, low-impedance drive capability (IOL = 8 mA, IOH = –4 mA), and three standby current states: dynamic ISB (60 mA), full static ISB1 (20 mA), and deselected high-Z mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (512K × 8) - supports byte-wide data paths without external multiplexing |
| Access Time (tAA) | 10 ns max - guarantees sub-100 MHz synchronous bus interfacing without wait states |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V LVTTL and LVCMOS logic domains |
| I/O Interface | TTL-compatible bidirectional I/O0–I/O7 - eliminates level-shifter requirements in mixed-voltage systems |
| Operating Temperature | 0°C to +70°C (Commercial grade) - validated for stable operation in office and lab environments |
| Package | 36-pin, 400 mil Plastic SOJ (PBG36) - industry-standard footprint with JEDEC center-power/ground pinout for noise reduction |
| Standby Current (ISB1) | 20 mA max - enables low-power hold state during processor sleep or idle cycles |
Pinout & Package
71V424S10YG is housed in a 36-pin, 400 mil Plastic SOJ (PBG36) package with JEDEC-standard center-power/ground configuration to minimize simultaneous switching noise. Pin 1 is marked by a notch or dot; orientation follows top-view schematic with A0 at pin 16 and VDD/VSS centered at pins 7/8 and 27/28.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word decoding; no external address latching required |
| CS | Chip Select | Active-low enable controlling device selection on shared data/address buses; enables bank isolation |
| OE | Output Enable | Active-low control for tri-state output drivers; allows concurrent read/write arbitration with other peripherals |
| WE | Write Enable | Active-low signal initiating write cycles; supports both WE- and CS-controlled timing modes per JEDEC spec |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible data path; internally managed direction control eliminates external transceivers |
| VDD | Power Supply | +3.3 V core supply; decoupling required within 10 mm of pins 7 and 27 per layout guidelines |
| VSS | Ground | Signal and power ground reference; pins 8 and 28 provide low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by symmetrically distributing VDD/VSS across package center |
| Equal Access & Cycle Times | tAA = tRC = 10 ns ensures predictable timing margins for both read setup and cycle completion |
| Single 3.3 V Supply Operation | Eliminates need for dual-rail regulators or voltage translators in 3.3 V system designs |
| Low-Power Standby Mode | ISB1 = 20 mA enables energy-efficient retention during host processor idle periods |
| Fully Static Asynchronous Core | No clock, no refresh, no hidden latency - simplifies timing analysis and eliminates DRAM-like complexity |
Applications
| Network Packet Buffering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Storing incoming Ethernet frames in real-time before CPU processing or forwarding. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer between MAC and controller. Use Value: 10 ns tAA ensures frame header parsing begins within one clock cycle of arrival, minimizing jitter in time-critical forwarding paths. |
Use Scenario: Capturing sensor readings at 1 kHz sampling rate with timestamped storage during power interruption. IC Role / Device Role / Timing Role: Non-refresh volatile memory holding last 10 seconds of operational history for crash recovery. Use Value: ISB1 ≤ 20 mA allows battery-backed operation for >24 hours while retaining full 512K × 8 capacity without data loss. |
| Medical Imaging Frame Store | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of digitized ultrasound scan lines prior to FFT processing and display rendering. IC Role / Device Role / Timing Role: Byte-accessible frame buffer synchronized to ADC sampling clock and display refresh engine. Use Value: TTL-compatible I/O0–I/O7 interfaces directly with FPGA-based image pipeline, avoiding glue logic and propagation delay. |
Use Scenario: Holding programmable test vectors for boundary-scan or functional validation of PCB assemblies. IC Role / Device Role / Timing Role: Deterministic-access pattern memory accessed by ATE controller via parallel address/data bus. Use Value: Equal tAA/tRC = 10 ns enables precise vector launch timing with ±0.5 ns jitter margin for high-speed digital test applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXIT | 512K × 8, 10 ns, 3.3 V, TSOP-44 package; higher ICC (190 mA vs. 180 mA) and lower ISB1 (10 mA) | Requires PCB redesign due to 44-pin TSOP vs. 36-pin SOJ; better suited for new designs prioritizing ultra-low standby | Select when board space permits TSOP and ISB1 < 15 mA is mandatory; not drop-in compatible |
| AS6C4008-10TIN | 512K × 8, 10 ns, 3.3 V, SOJ-36 package; identical pinout but wider VDD tolerance (2.7–3.6 V) and higher tCHZ (8 ns) | Direct physical replacement with same footprint; slower output disable may limit bus turnaround in high-frequency burst transfers | Choose for legacy SOJ-36 compatibility where tCHZ ≥ 7 ns is acceptable; verify timing closure in burst-mode protocols |
Compared with CY62148EV30LL-10ZSXIT and AS6C4008-10TIN, the 71V424S10YG offers optimal balance of SOJ-36 footprint compatibility, 10 ns deterministic timing, and 20 mA full-standby current-making it ideal for cost-sensitive, space-constrained upgrades of existing embedded memory subsystems.
Availability
71V424S10YG is available at Aetrix Electronics and suitable for network interface cards, industrial PLCs, medical imaging subsystems, and automated test equipment requiring stable component supply across commercial temperature range and long-term production continuity.
Supply support for 71V424S10YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V424S10YG belongs to Renesas' legacy high-speed SRAM product line, engineered for deterministic, low-latency memory interfacing in resource-constrained embedded systems where refresh-free operation and TTL compatibility are critical.
FAQ
What is the maximum operating frequency supported by the 71V424S10YG?
The 71V424S10YG does not operate on a clock signal-it is an asynchronous SRAM. Its maximum effective throughput is determined by its 10 ns read cycle time (tRC), enabling up to 100 MHz sustained random access under ideal bus conditions. Real-world bandwidth depends on address/data bus setup/hold timing and controller overhead, not internal clocking.
Does the 71V424S10YG require external refresh circuitry?
No, the 71V424S10YG is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as VDD remains within specification (3.0–3.6 V) and ambient temperature stays within the commercial range (0°C to +70°C).
Can the 71V424S10YG be used with 5 V TTL systems?
The 71V424S10YG inputs are TTL-compatible (VIH = 2.0 V min, VIL = 0.8 V max), allowing direct connection to 5 V TTL output drivers. However, its outputs swing only to VOH = 2.4 V (min) at VDD = 3.0 V, so interfacing with 5 V TTL inputs requires a pull-up resistor or level translator to meet VIH thresholds.
What is the meaning of "S" in the 71V424S10YG part number?
The "S" in 71V424S10YG denotes the Standard Power variant of the IDT71V424 family. It distinguishes the device from the Low Power "L" variant (e.g., 71V424L10YG), offering higher dynamic current (ICC = 180 mA vs. 165 mA) but identical timing, pinout, and voltage specifications.
Is the 71V424S10YG RoHS compliant and lead-free?
Yes, the 71V424S10YG is a Green (lead-free, halogen-free) device per Renesas' ordering information. It complies with RoHS Directive 2011/65/EU and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements when shipped in dry pack with desiccant.
71V424S10YG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
71V424S10YG FAQ
1.How can I place an order for 71V424S10YG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V424S10YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V424S10YG reliable?
The price and inventory of 71V424S10YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V424S10YG is usually 5 days.
3.What payment methods are accepted for 71V424S10YG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V424S10YG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V424S10YG?
71V424S10YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V424S10YG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V424S10YG?
For technical support, including 71V424S10YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V424S10YG requirements.
6.How does Aetrix verify that 71V424S10YG is sourced from the original manufacturer or authorized distributors?
All 71V424S10YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V424S10YG meets industry standards.
7.What is the process for return or replacement of 71V424S10YG?
All 71V424S10YG units undergo pre-shipment inspection (PSI). If there is an issue with 71V424S10YG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V424S10YG part is unused and in its original packaging.
Return procedure for 71V424S10YG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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