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Renesas 71V424S10YG8
- Part No.:
- 71V424S10YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 36-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V424S10YG8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 36SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,385
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Product details
Overview
71V424S10YG8 from Renesas is a 4-Mbit (512K × 8) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, JEDEC-compliant center-power/ground pinout, and TTL-compatible bidirectional I/O. It serves as main or buffer memory in real-time embedded controllers requiring deterministic, clockless data retention.
For engineers reviewing the 71V424S10YG8 datasheet, 71V424S10YG8 pinout, 71V424S10YG8 application, or 71V424S10YG8 equivalent, key selection criteria include commercial-grade 10 ns read cycle time, SOJ-36 package compatibility, low-power standby current (ISB1 = 20 mA), and direct replacement readiness for legacy IDT71V424 designs.
Technical Context
The 71V424S10YG8 implements fully static asynchronous architecture-no clocks, no refresh required-enabling seamless integration into deterministic control systems. Its dual-control interface uses independent Chip Select (CS) and Output Enable (OE) pins, supporting both CS-controlled and OE-controlled read cycles with tOE ≤ 5 ns and tCLZ ≤ 4 ns.
It features TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and output drive capability (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA) under 3.0–3.6 V supply, with JEDEC-standard 36-pin SOJ (PBG36) mechanical layout optimized for noise reduction via center VDD/VSS placement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (512K × 8) - supports byte-wide data buses without external multiplexing |
| Access Time (tAA) | 10 ns max - enables ≤100 MHz burst read throughput in synchronous bus interfaces |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3 V logic rails; no level-shifting required |
| Standby Current (ISB1) | 20 mA max - ensures low power consumption during idle states in battery-backed systems |
| I/O Interface | TTL-compatible bidirectional I/O0–I/O7 - interoperable with legacy 5 V-tolerant microcontrollers via pull-up design |
| Operating Temperature | 0°C to +70°C - qualified for commercial industrial control panels and communications infrastructure |
| Package | 36-pin plastic SOJ (PBG36), 400 mil width - surface-mount compatible with standard reflow profiles |
Pinout & Package
71V424S10YG8 is housed in a 36-pin, 400 mil plastic SOJ (PBG36) package with JEDEC-standard center-power/ground pin arrangement to minimize simultaneous switching noise. Pin 1 is A0 (LSB address); pins 19 and 20 are VDD and VSS respectively at package center.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word decoding; no external address latching needed |
| CS | Chip Select | Active-low enable; controls device activation and ISB1 standby entry when high |
| OE | Output Enable | Active-low; gates output drivers independently of CS to support multiplexed bus sharing |
| WE | Write Enable | Active-low; initiates write cycle on falling edge with tWP ≥ 8 ns minimum pulse width |
| I/O0–I/O7 | Bidirectional Data | True 8-bit bidirectional bus; direction controlled by CS/OE/WE state per truth table |
| VDD | Power Supply | 3.3 V core supply; pin 19 placed centrally to reduce IR drop and ground bounce |
| VSS | Ground | Reference ground; pin 20 adjacent to VDD for optimal decoupling capacitor placement |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by 30–40% vs. corner-pin layouts in dense PCB layouts |
| Equal Access & Cycle Times | tRC = tAA = 10 ns - eliminates timing margin uncertainty between read and write cycles |
| Low-Power Standby Mode | ISB1 = 20 mA max - enables >90% power reduction vs. active mode (ICC = 180 mA) during idle |
| TTL-Compatible I/O | VIH min = 2.0 V, VOL max = 0.4 V - ensures reliable interfacing with 3.3 V and mixed-voltage microcontrollers |
| Fully Static Operation | No clocks or refresh required - simplifies system design and eliminates DRAM controller overhead |
Applications
| Industrial PLC Memory Buffer | Telecom Line Card Frame Buffer |
|---|---|
|
Use Scenario: Storing real-time I/O status and configuration registers in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding firmware variables and process data; accessed asynchronously during each 10 ms scan window. Use Value: 10 ns tAA ensures full register set read/write completes within 1 µs, leaving >99% of scan time for logic execution. |
Use Scenario: Holding packet header metadata and channel assignment tables in TDM-based telecom line cards. IC Role / Device Role / Timing Role: Low-latency frame buffer enabling sub-microsecond header lookups during time-slot switching. Use Value: tOE ≤ 5 ns and tOH ≥ 4 ns guarantee valid data within 5 ns of OE assertion, meeting E1/T1 framing jitter budgets. |
| Medical Imaging Control FIFO | Automotive ADAS Sensor Cache |
|
Use Scenario: Acting as a first-in-first-out cache for raw pixel data streams from X-ray detector arrays before DSP processing. IC Role / Device Role / Timing Role: Byte-wide asynchronous FIFO stage buffering bursty sensor data between analog front-end and FPGA pipeline. Use Value: 512K × 8 capacity holds ≥128 frames of 4K×128-pixel data; SOJ-36 footprint fits tight space constraints near detector ASICs. |
Use Scenario: Caching radar echo samples in automotive 77 GHz ADAS modules prior to FFT computation. IC Role / Device Role / Timing Role: Deterministic latency memory storing time-domain chirp returns with guaranteed ≤10 ns access for real-time Doppler analysis. Use Value: Commercial temperature grade (0°C to +70°C) matches under-hood ECUs; ISB1 = 20 mA supports low-power sleep modes between chirps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXIT | 4-Mbit (512K × 8), 10 ns, 3.3 V, TSOP-44 package; higher ICC (200 mA) and ISB (35 mA) | Requires PCB redesign due to 44-pin TSOP vs. 36-pin SOJ; better thermal dissipation but larger footprint | Select when board layout allows TSOP and higher dynamic current is acceptable |
| AS6C4008-10PCN | 4-Mbit (512K × 8), 10 ns, 3.3 V, SOJ-36; lower ISB1 (15 mA) but no industrial temp option | Same SOJ-36 footprint and pinout; lacks –40°C to +85°C qualification for harsh environments | Select for cost-sensitive commercial applications where extended temperature range is unnecessary |
Compared with CY62148EV30LL-10ZSXIT and AS6C4008-10PCN, the 71V424S10YG8 uniquely balances SOJ-36 compatibility, 20 mA ISB1, and commercial-grade 10 ns performance-making it optimal for space-constrained, low-power, and legacy-pinout-replacement designs.
Availability
71V424S10YG8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging subsystems, and automotive ADAS modules requiring stable component supply across multi-year production cycles.
Supply support for 71V424S10YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V424S10YG8 belongs to Renesas' legacy high-speed SRAM product line, designed specifically for deterministic, low-latency memory in real-time control and signal processing systems where refresh-free operation and precise timing predictability are critical.
FAQ
What is the maximum operating frequency supported by the 71V424S10YG8?
The 71V424S10YG8 does not operate on a clock; it is an asynchronous SRAM. Its 10 ns access time (tAA) and 10 ns read cycle time (tRC) support effective data throughput up to 100 MHz in burst-read configurations. Timing is governed by address setup/hold and control signal propagation-not a system clock-making it ideal for event-driven architectures.
Does the 71V424S10YG8 require external refresh circuitry?
No, the 71V424S10YG8 is a fully static RAM and requires no refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as VDD remains within 3.0–3.6 V and ambient temperature stays within 0°C to +70°C. This eliminates refresh overhead and timing complexity found in DRAM-based systems.
Can the 71V424S10YG8 be used with 5 V microcontrollers?
Yes-the 71V424S10YG8 has TTL-compatible inputs (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V at –4 mA), allowing safe interfacing with 5 V logic when driven through series resistors or open-drain buffers. However, VDD must remain at 3.3 V ±10%; direct 5 V supply will damage the device.
What is the meaning of "YG8" in the part number 71V424S10YG8?
In 71V424S10YG8, "YG" denotes the PBG36 (36-pin, 400 mil plastic SOJ) package, and "8" indicates tape-and-reel packaging format. The "S" signifies standard power variant, "10" is the 10 ns speed grade, and "YG8" together confirms SOJ-36 in reel packaging-critical for automated SMT assembly.
How does the JEDEC center-power/ground pinout improve noise performance in the 71V424S10YG8?
The 71V424S10YG8 places VDD (pin 19) and VSS (pin 20) at the center of the SOJ-36 package, symmetrically flanked by I/O and control pins. This reduces ground bounce and supply rail collapse during simultaneous I/O transitions, lowering peak noise by up to 40% compared to corner-pin SOJ layouts-especially beneficial in high-density, high-speed control boards.
71V424S10YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 36-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 36-SOJ
71V424S10YG8 FAQ
1.How can I place an order for 71V424S10YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V424S10YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V424S10YG8 reliable?
The price and inventory of 71V424S10YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V424S10YG8 is usually 5 days.
3.What payment methods are accepted for 71V424S10YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V424S10YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V424S10YG8?
71V424S10YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V424S10YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V424S10YG8?
For technical support, including 71V424S10YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V424S10YG8 requirements.
6.How does Aetrix verify that 71V424S10YG8 is sourced from the original manufacturer or authorized distributors?
All 71V424S10YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V424S10YG8 meets industry standards.
7.What is the process for return or replacement of 71V424S10YG8?
All 71V424S10YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V424S10YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V424S10YG8 part is unused and in its original packaging.
Return procedure for 71V424S10YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V424S10YG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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