Renesas 71V546S100PFG8

Overview

71V546S100PFG8 from Integrated Device Technology is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, pipelined outputs, and 4-word burst capability. It operates at 100 MHz (10 ns clock cycle), delivers 5 ns clock-to-data access, and supports linear or interleaved burst ordering via the LBO pin. It is used in high-speed networking packet buffers and telecom line-card memory subsystems requiring seamless read/write transitions.

For engineers reviewing the 71V546S100PFG8 datasheet, 71V546S100PFG8 pinout, 71V546S100PFG8 application, or 71V546S100PFG8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and synchronous byte-write control for partial-word updates in burst pipelines.

Technical Context

The 71V546S100PFG8 implements a fully registered synchronous interface with all address, control, and data paths triggered on the rising edge of CLK-except OE, which remains asynchronous. Its internal burst counter advances on ADV/LD = HIGH, enabling four consecutive data cycles per address load without reissuing the address.

ZBT™ operation is achieved by decoupling bus direction control from data phase timing: write-to-read or read-to-write transitions occur with zero dead cycles because output enable is register-controlled and bus tri-state is managed internally with precise 2-cycle deselect latency. The device uses three chip enables (CE1, CE2 low; CE2 high) for flexible depth expansion and supports individual 9-bit byte writes via BW1–BW4.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), the 71V546S100PFG8 features a 14 mm × 20 mm body with 0.5 mm pitch leads. Pin 1 is located at the top-left corner (marked by dot or bevel), and the package includes dedicated power/ground pins distributed across all four sides for low-noise operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-100BZXI and AS7C31026B-10JIN, the 71V546S100PFG8 uniquely delivers ZBT™-enabled zero-dead-cycle operation and integrated 4-word burst sequencing-reducing controller complexity and improving sustained bandwidth in high-throughput memory subsystems.

Availability

71V546S100PFG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and high-performance computing applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V546S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications and computing markets.

The IDT71V546 product line was designed specifically for high-speed, low-latency memory buffering in networking and telecom equipment-emphasizing ZBT™ architecture, burst efficiency, and industrial reliability.

FAQ

What does the 'S100' suffix in 71V546S100PFG8 indicate?

The 'S100' suffix denotes the speed grade: 100 MHz maximum clock frequency with 10 ns clock cycle time and 5 ns clock-to-data access (tCD). This distinguishes it from the S133 variant (133 MHz, 4.2 ns tCD). The 71V546S100PFG8 is fully specified and tested to meet these timing parameters across industrial temperature and voltage ranges.

How does the ZBT™ feature eliminate bus turnaround cycles in 71V546S100PFG8?

The ZBT™ feature in the 71V546S100PFG8 removes dead cycles between read and write operations by using internally synchronized registered outputs and eliminating the need for external OE control. Bus direction changes occur seamlessly because the device manages output enable and tri-state timing internally-ensuring the next data phase begins immediately after the prior one ends, with no gap.

Can the 71V546S100PFG8 operate with only two chip enables instead of three?

Yes-the 71V546S100PFG8 supports simplified enable logic: CE1 and CE2 can be tied active low while CE2 is tied active high (VDD), satisfying the selection condition (CE1=L, CE2=L, CE2=H). All three pins must meet their respective polarity requirements simultaneously for selection; omitting or misconfiguring any one causes immediate deselect within two clock cycles.

What is the function of the ADV/LD and LBO pins in 71V546S100PFG8 burst operation?

ADV/LD controls burst initiation: sampled LOW to load a new external address, HIGH to advance the internal burst counter. LBO selects burst order-LOW for linear (0,1,2,3), HIGH for interleaved (0,2,1,3)-determining how A0/A1 increment during the 4-word sequence. Both are synchronous inputs sampled on the rising CLK edge when the device is selected.

Is the 71V546S100PFG8 pin-compatible with other members of the IDT71V546 family?

Yes-the 71V546S100PFG8 shares identical 100-pin TQFP pinout and signal mapping with all speed grades (e.g., 71V546S133PFG8) and temperature variants in the IDT71V546 family. Differences are limited to AC timing specifications and DC current ratings; no PCB redesign is needed when upgrading or downgrading speed grades within the same package.