Renesas 71V546S100PFGI8

Overview

71V546S100PFGI8 from Integrated Device Technology (IDT) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, pipelined outputs, and 4-word burst capability. It operates at 100 MHz (10 ns cycle time), delivers 4.2 ns clock-to-data access in read mode, supports individual byte write control (BW1–BW4), and is packaged in a 100-pin TQFP for high-density board layouts. It is used in high-speed packet buffering and network switch fabric memory subsystems.

For engineers reviewing the 71V546S100PFGI8 datasheet, 71V546S100PFGI8 pinout, 71V546S100PFGI8 application, or 71V546S100PFGI8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, synchronous burst counter operation, industrial temperature support (−40°C to +85°C), 3.3V ±5% supply tolerance, and JEDEC-standard 100-pin TQFP mechanical compatibility.

Technical Context

The 71V546S100PFGI8 implements a fully registered synchronous interface with all address, control, and data paths triggered on the rising edge of CLK-except OE, which remains asynchronous. Its internal burst counter advances on ADV/LD = HIGH, supporting linear or interleaved 4-word sequences selected by static LBO pin state.

ZBT™ operation eliminates dead cycles between read/write transitions by decoupling bus direction control from timing: R/W is sampled only at address load (ADV/LD = LOW), while subsequent burst cycles execute without re-sampling R/W. Chip enable logic uses three independent signals (CE1, CE2 active-low; CE2 active-high) for flexible depth expansion and two-cycle tri-state output disable.

Key Specifications

Pinout & Package

71V546S100PFGI8 is housed in a JEDEC-standard 100-pin Thin Quad Flat Package (TQFP), measuring 14 mm × 20 mm with 0.5 mm lead pitch. The package supports high I/O density and thermal performance suitable for industrial ambient conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-100BZI and AS7C31026B-10JIN, the 71V546S100PFGI8 uniquely delivers ZBT™-enabled zero-gap read/write transitions and integrated burst sequencing-reducing controller logic complexity and maximizing effective memory bandwidth in high-throughput packet processing.

Availability

71V546S100PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V546S100PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, specializes in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The IDT71V546 family was designed specifically for high-speed, low-latency memory subsystems in networking and telecom equipment-emphasizing ZBT™ architecture, burst efficiency, and industrial-grade reliability.

FAQ

What does the 'S100' suffix in 71V546S100PFGI8 indicate?

The 'S100' suffix denotes the speed grade: 100 MHz maximum clock frequency with 10 ns clock cycle time (tCYC). This is confirmed in the AC Electrical Characteristics table (Table 23), where 71V546S100 specifies tCYC = 10 ns min and fMAX = 100 MHz. The 71V546S100PFGI8 meets all timing parameters under industrial temperature and 3.3V ±5% supply conditions.

Does 71V546S100PFGI8 support true dual-port operation?

No, 71V546S100PFGI8 is a single-port synchronous SRAM. It supports concurrent read and write operations only via ZBT™-enabled back-to-back cycles-not simultaneous access. The device has one unified address/data/control bus; true dual-port functionality (independent read/write ports) is not implemented. Its architecture optimizes sequential throughput, not concurrent access.

How is burst order controlled on 71V546S100PFGI8?

Burst order is controlled by the LBO (Linear Burst Order) pin: when LBO = LOW, the device executes linear burst (0,1,2,3); when LBO = HIGH, it executes interleaved burst (0,2,1,3). LBO is a static DC input-no clocking or timing constraints apply. The behavior is defined in Tables 9 and 10 of the datasheet and verified in functional timing waveforms.

Can 71V546S100PFGI8 operate with OE tied permanently low?

Yes, OE can be tied low in normal operation. As stated in the Pin Definitions (Table 2), OE is asynchronous and "does not need to be actively controlled for read and write cycles." When OE = LOW, outputs are enabled; when OE = HIGH, I/O pins go high-Z. Tying OE low simplifies design and is explicitly supported-no timing penalty or functional limitation applies.

What is the purpose of the three chip enable signals (CE1, CE2, CE2) on 71V546S100PFGI8?

The three chip enables (CE1, CE2 active-low; CE2 active-high) provide flexible depth expansion control. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. Any deviation initiates a two-cycle deselect, tri-stating outputs. This configuration allows hierarchical enable trees, priority-based banking, or redundancy schemes without external logic-verified in Truth Table 7 and Operation Table 11.