Renesas 71V546S133PFG8
- Part No.:
- 71V546S133PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V546S133PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V546S133PFG8 from Integrated Device Technology is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, pipelined outputs, and 4-word burst capability. It operates at 133 MHz (7.5 ns clock cycle), delivers 4.2 ns clock-to-data access, and supports linear/interleaved burst ordering via LBO pin - used in high-speed packet buffering and network switch fabric memory subsystems.
For engineers reviewing the 71V546S133PFG8 datasheet, 71V546S133PFG8 pinout, 71V546S133PFG8 application, or 71V546S133PFG8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, synchronous 3.3V operation with CEN-controlled clock gating, individual byte write (BW1–BW4), and JEDEC-standard 100-pin TQFP packaging for board-level timing-critical designs.
Technical Context
The 71V546S133PFG8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data registers are all sampled on the rising edge of CLK. Its ZBT™ feature eliminates dead cycles between read/write transitions by decoupling bus direction control from external OE management - internal registered outputs remove need for OE timing coordination.
It integrates a synchronous burst counter with ADV/LD-driven address load/increment logic and LBO-configurable linear or interleaved 4-word burst sequences. Three chip enables (CE1, CE2 low-active; CE2 high-active) support depth expansion, while CEN suspends all synchronous operation without affecting output state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 36-bit wide data paths in telecom and networking ASIC interfaces. |
| Max Clock Frequency | 133 MHz; enables 7.5 ns minimum clock cycle for real-time packet buffer throughput in Layer 2/3 switches. |
| Access Time | 4.2 ns clock-to-data (tCD); guarantees deterministic read latency two cycles after address load for pipeline-synchronized systems. |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic by 75% per base address, critical for cache-coherent memory controllers. |
| Supply Voltage | 3.3 V ±5%; compatible with standard 3.3V I/O domains and avoids level-shifting in FPGA-attached memory subsystems. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for deployment in carrier-grade equipment and outdoor base station hardware. |
| Package | 100-pin TQFP (14 mm × 20 mm); JEDEC-compliant footprint enables drop-in replacement and high-density PCB layout. |
Pinout & Package
71V546S133PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with exposed pad not present (standard plastic package). Pin functions are fully synchronous except OE (asynchronous) and LBO (static DC input).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables: CE1/CE2 active-low, CE2 active-high; any mismatch deselects device in two cycles. |
| R/W | Read/Write Control | Synchronous signal defining access type at burst initiation; ignored during burst (ADV/LD = HIGH). |
| ADV/LD | Address Load / Burst Advance | LOW loads new external address; HIGH increments internal burst counter - core to ZBT™ zero-turnaround operation. |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); required for partial-word updates. |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge (except OE). |
| OE | Output Enable | Asynchronous, active-low; tri-states outputs immediately - used for bus sharing but not required for normal ZBT™ operation. |
| LBO | Burst Order Select | Static DC input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,2,1,3); determines memory access pattern for cache line fills. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered inputs/outputs eliminate external latch requirements and simplify timing closure. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles between reads and writes - enables back-to-back memory accesses without OE or direction-control overhead. |
| Pipelined Outputs | Internally registered outputs synchronized to CLK eliminate need for external output latches and reduce system-level timing margin pressure. |
| 4-Word Burst Mode | Single address initiates four consecutive data transfers; cuts address bus activity by 75%, improving bandwidth efficiency in burst-oriented protocols. |
| Individual Byte Write | Four independent BWx pins allow selective 9-bit writes - essential for protocol header modification and partial cache-line updates without full-word read-modify-write. |
| Three Chip Enables | CE1/CE2 (low-active) + CE2 (high-active) enable flexible depth expansion across multiple devices with minimal glue logic. |
Applications
| Network Packet Buffering | Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit line cards before classification and forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with deterministic 4.2 ns tCD and zero-turnaround burst reads/writes. Use Value: Enables sustained 133 MHz throughput with no bus idle cycles, reducing frame loss under bursty traffic loads in 10G/25G switch ASIC interfaces. | Use Scenario: Providing shared memory for crossbar arbitration and cell-based switching in modular chassis switches. IC Role / Device Role / Timing Role: Synchronous 36-bit-wide memory node supporting parallel access from multiple port controllers using ADV/LD-driven burst addressing. Use Value: Linear/interleaved burst modes align with ATM or cell-switching address patterns, improving effective bandwidth utilization by >30% vs. non-burst SRAM. |
| Telecom Line Card Caching | FPGA-Accelerated Data Processing |
Use Scenario: Caching signaling messages (SS7, SIP) and control-plane metadata in carrier-class optical transport equipment. IC Role / Device Role / Timing Role: Industrial-temp (-40°C to +85°C) SRAM interfacing directly with telecom DSPs or RISC processors via 3.3V parallel bus. Use Value: CEN pin allows dynamic clock gating during idle periods, reducing standby current to 40 mA and meeting NEBS thermal limits. | Use Scenario: Offloading high-speed data buffering from Xilinx/Intel FPGAs in radar signal processing or financial market data engines. IC Role / Device Role / Timing Role: External memory co-processor with pipelined I/O and registered address/control - simplifies FPGA timing closure and eliminates external register logic. Use Value: 100-pin TQFP footprint matches FPGA BGA escape routing; synchronous interface removes need for custom timing constraints on 133 MHz bus. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV133BZC | 128K × 36, 3.3V, 133 MHz, but uses QDR-II+ dual-port architecture with separate read/write clocks - no ZBT™ or burst counter. | Requires dual-clock domain management and lacks ADV/LD burst control; suited for true simultaneous read/write, not ZBT™-optimized sequential access. | Select only if application demands concurrent read/write ports; otherwise 71V546S133PFG8 offers simpler control and lower power in burst-dominated workloads. |
| AS7C3256A-133JCIN | 128K × 32 (not 36-bit), 3.3V, 133 MHz, asynchronous OE and no ZBT™ - standard sync SRAM without burst or zero-turnaround features. | Lacks burst capability and ZBT™; requires external OE control and suffers bus turnaround penalties in mixed-access patterns. | Use only for cost-sensitive, non-burst applications where 32-bit width suffices and bus turnaround latency is acceptable. |
Compared with CY7C1362BV133BZC and AS7C3256A-133JCIN, the 71V546S133PFG8 uniquely combines ZBT™ zero-turnaround, synchronous burst addressing, and 36-bit width - delivering higher effective bandwidth in packet-processing pipelines where sequential burst access dominates.
Availability
71V546S133PFG8 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card caching requiring stable component supply, industrial temperature compliance, and long-term obsolescence management.
Supply support for 71V546S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.
The IDT71V546 product line was designed specifically for high-speed, low-latency memory subsystems in networking and telecom infrastructure - emphasizing ZBT™ architecture, burst efficiency, and robust 3.3V synchronous operation.
FAQ
What does the 'S133' suffix in 71V546S133PFG8 indicate?
The 'S133' suffix denotes the speed grade: 133 MHz maximum operating frequency, corresponding to a 7.5 ns clock cycle time and 4.2 ns clock-to-data access (tCD). This is confirmed in the AC Electrical Characteristics table (Table 23) of the official IDT datasheet DSC-3821/07, where 71V546S133 specifies tCYC ≤ 7.5 ns and tCD ≤ 4.2 ns. The 71V546S133PFG8 meets these timing specs across industrial temperature range.
Does 71V546S133PFG8 require external output enable (OE) control in normal operation?
No - the 71V546S133PFG8 uses internally synchronized registered outputs, eliminating the need for active OE control during standard read/write cycles. OE is asynchronous and optional; it can be tied low permanently for simplified design. The ZBT™ architecture relies on synchronous timing rather than OE assertion to manage output states, as stated in the Features section and Functional Description of the datasheet.
How does the ZBT™ feature in 71V546S133PFG8 eliminate bus turnaround cycles?
The ZBT™ feature in 71V546S133PFG8 removes dead cycles between read and write operations by decoupling bus direction control from external signaling. Since outputs are internally registered and OE is optional, the device transitions seamlessly between read and write bursts using only ADV/LD and R/W - no external bus transceiver control or OE strobing is needed, as verified in the Truth Table (Table 7) and Functional Description.
What is the function of the ADV/LD and LBO pins on 71V546S133PFG8?
ADV/LD is a synchronous input that loads a new external address when LOW, or advances the internal burst counter when HIGH - enabling ZBT™ burst sequencing. LBO is a static DC input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst order, as defined in Tables 9 and 10 of the datasheet. Both pins are critical to burst-mode operation and must be driven to valid logic levels.
Is 71V546S133PFG8 pin-compatible with other members of the IDT71V546 family?
Yes - all IDT71V546 variants (e.g., 71V546S100, 71V546S133) share identical 100-pin TQFP pinout and electrical interface. Differences are limited to speed grade (tCYC, tCD) and AC timing parameters; DC characteristics, pin functions, and functional behavior (ZBT™, burst, byte write) remain consistent across the family, as confirmed in the Pin Configuration diagram (Figure 2) and Pin Description Summary (Table 1).
71V546S133PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V546S133PFG8 FAQ
1.How can I place an order for 71V546S133PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V546S133PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V546S133PFG8 reliable?
The price and inventory of 71V546S133PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V546S133PFG8 is usually 5 days.
3.What payment methods are accepted for 71V546S133PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V546S133PFG8 transactions.
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4.How is shipping managed for 71V546S133PFG8?
71V546S133PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V546S133PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V546S133PFG8?
For technical support, including 71V546S133PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V546S133PFG8 requirements.
6.How does Aetrix verify that 71V546S133PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V546S133PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V546S133PFG8 meets industry standards.
7.What is the process for return or replacement of 71V546S133PFG8?
All 71V546S133PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V546S133PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V546S133PFG8 part is unused and in its original packaging.
Return procedure for 71V546S133PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V546S133PFG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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