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Renesas 71V547S100PFG

Part No.:
71V547S100PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V547S100PFG.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,776

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Product details

Overview

71V547S100PFG from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, flow-through outputs, and 4-word burst capability. It delivers 95 MHz operation (8 ns clock-to-data access), supports linear/interleaved burst ordering via LBO pin, and features three chip enables for depth expansion - used in high-speed packet buffering and network switch fabric control planes.

For engineers reviewing the 71V547S100PFG datasheet, 71V547S100PFG pinout, 71V547S100PFG application, or 71V547S100PFG equivalent, key selection criteria include ZBT™ bus turnaround elimination, synchronous 3.3V operation with ±5% tolerance, JEDEC-standard 100-pin TQFP packaging, and support for individual byte write (BW1–BW4) and clock enable (CEN) for low-power idle states.

Technical Context

The 71V547S100PFG implements a synchronous pipeline architecture where address/control registration occurs on the rising CLK edge, with data output appearing one cycle later. Its ZBT™ feature eliminates dead cycles between read/write transitions by decoupling bus direction control from external OE timing - only OE remains asynchronous.

Burst operation is managed by an on-chip counter advanced via ADV/LD (high = increment, low = load new address), with sequence order determined statically by LBO (low = linear, high = interleaved). Chip select uses three enables (CE1, CE2 active-low; CE2 active-high), enabling flexible memory depth expansion without external logic.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36 bits (4.5 Mbit); supports full 36-bit word or independent 9-bit byte writes via BW1–BW4.
Max Clock Frequency100 MHz (tCYC = 15 ns min); enables 95 MHz sustained operation with 8 ns clock-to-data (tCD) access.
Supply Voltage3.3 V ±5% (3.135–3.465 V); compatible with standard 3.3V logic families and mixed-voltage system rails.
Operating TemperatureIndustrial range: –40°C to +85°C; validated for embedded networking and industrial control environments.
Power ConsumptionIDD = 200 mA max at 100 MHz; ISB3 (idle, CEN high) = 40 mA - enables dynamic power gating during burst pauses.
Burst Mode4-word burst (linear or interleaved); initiated by ADV/LD high after initial address load - reduces address bus traffic by 75% per burst.
Output ArchitectureFlow-through (no output register); eliminates output latency skew but requires precise OE timing for bus sharing.

Pinout & Package

Packaged in a JEDEC-standard 14 mm × 20 mm 100-pin thin quad flatpack (TQFP), RoHS-compliant, with 0.5 mm pitch and exposed thermal pad (not electrically connected).

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address Inputs17-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled.
CE1, CE2, CE2Chip EnablesThree independent enables: CE1/CE2 active-low, CE2 active-high; any false condition deselects device in one cycle.
R/WRead/Write ControlSynchronous signal defining access type for current load cycle; ignored during burst (ADV/LD = HIGH).
ADV/LDAddress Load / Burst AdvanceLOW loads new external address; HIGH advances internal burst counter - defines burst vs. single-cycle behavior.
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte segments (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4); all may be tied low for full-word writes.
CLKSystem Clock InputPrimary timing reference; all synchronous inputs sampled on rising edge - no internal clock division.
OEOutput EnableAsynchronous, active-low; tri-states I/O pins immediately - critical for shared-bus arbitration without clock dependency.
LBOBurst Order SelectStatic DC input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,2,1,3); determines memory access pattern for cache-line alignment.
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus: 32 data bits + 4 parity bits; input path registered, output path flow-through.
VDD / VSSPower / GroundSingle 3.3V supply; multiple VDD/VSS pins distributed across package for low-impedance decoupling and EMI reduction.

Key Features

FeatureDesign Value
ZBT™ ArchitectureEliminates bus turnaround dead cycles between reads and writes - enables continuous data streaming in switch fabric and DMA controllers.
Flow-Through OutputsRemoves output register delay, reducing read latency by one clock cycle - critical for real-time packet inspection pipelines.
4-Word Burst with LBO ControlReduces address bus activity by 75% per burst; linear mode suits sequential buffers, interleaved mode optimizes cache-line fetches.
Three Independent Chip EnablesEnables seamless depth expansion up to 128M × 36 without external decode logic - simplifies large memory subsystem design.
Clock Enable (CEN)Suspends all synchronous operation while preserving register state - allows dynamic clock gating for power savings in idle periods.

Applications

Network Packet BufferingHigh-Speed Switch Fabric Control

Use Scenario: Temporary storage of variable-length Ethernet frames in Layer 2/L3 switches before forwarding decision and egress scheduling.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-in-first-out (FIFO) buffer with ZBT™ enabling back-to-back read/write for cut-through switching.

Use Value: 95 MHz throughput and zero-turnaround operation reduce frame latency by up to 2 clock cycles versus conventional SRAM, improving worst-case jitter.

Use Scenario: Storing forwarding table entries, queue descriptors, and priority mappings in modular chassis-based routers.

IC Role / Device Role / Timing Role: High-bandwidth memory for control-plane lookup engines requiring deterministic 8 ns read access and burst-aligned writes.

Use Value: 4-word burst mode cuts address bus transactions by 75%, freeing bandwidth for parallel TCAM lookups and statistics collection.

Telecom Line Card MemoryIndustrial Real-Time Data Acquisition

Use Scenario: Frame assembly/disassembly and HDLC processing in TDM-over-IP gateways and SDH/SONET add-drop multiplexers.

IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via ZBT™ and flow-through outputs - supports simultaneous ingress/egress data streams.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V operation ensure reliability in uncooled line card environments.

Use Scenario: High-resolution sensor fusion buffer in programmable logic controller (PLC) backplanes handling synchronized analog/digital I/O.

IC Role / Device Role / Timing Role: Deterministic-latency memory for time-critical control loops, leveraging CEN for synchronized sleep/wake cycles.

Use Value: Individual byte write (BW1–BW4) enables efficient partial updates of multi-sensor records without full-word overwrites.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1371DV33-100AXC128K × 36, 3.3V, 100 MHz, but uses pipelined (not flow-through) outputs and lacks ZBT™ - introduces 1-cycle output latency.Requires additional OE coordination for bus sharing; not suitable for true zero-turnaround systems.Select only if output latency tolerance >1 cycle and ZBT™ is not required for protocol compliance.
AS7C312836B-10BIN128K × 36, 3.3V, 100 MHz, flow-through outputs, but no burst counter or ADV/LD control - single-word access only.Cannot perform 4-word bursts; requires external address sequencing logic for multi-word transfers.Choose when burst functionality is unnecessary and board space permits discrete counter logic.

Compared with CY7C1371DV33-100AXC and AS7C312836B-10BIN, the 71V547S100PFG uniquely combines ZBT™, flow-through outputs, and integrated burst counter - delivering lowest latency and highest effective bandwidth for memory-intensive telecom and industrial control applications.

Availability

71V547S100PFG is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric control, and industrial real-time data acquisition requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V547S100PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V547S100PFG belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for low-latency, high-throughput data buffering in networking equipment, telecom line cards, and real-time industrial controllers.

FAQ

What is the maximum operating frequency of the 71V547S100PFG?

The 71V547S100PFG is rated for 100 MHz operation (tCYC = 15 ns minimum), with guaranteed 95 MHz performance (8 ns clock-to-data access) across industrial temperature range. This frequency is achievable under specified 3.3V ±5% supply and proper AC loading conditions per Figure 1 in the datasheet.

Does the 71V547S100PFG support true zero bus turnaround?

Yes, the 71V547S100PFG implements ZBT™ (Zero Bus Turnaround) architecture, eliminating dead cycles between read and write operations. This is achieved via synchronous control logic and flow-through outputs - allowing immediate bus direction reversal without external OE coordination or added latency.

How does burst mode work on the 71V547S100PFG?

Burst mode on the 71V547S100PFG is initiated by sampling ADV/LD = HIGH after an initial address load. The on-chip counter then generates four consecutive addresses based on LBO state (linear or interleaved). Each burst word appears one clock cycle after the previous, with no additional address setup required.

What is the function of the CEN pin on the 71V547S100PFG?

The CEN (Clock Enable) pin on the 71V547S100PFG suspends all synchronous operation when sampled HIGH at the rising CLK edge. Internal registers retain their state, outputs remain unchanged, and no new accesses occur - enabling precise clock gating for power management without data loss or reinitialization.

Can the 71V547S100PFG operate in industrial temperature environments?

Yes, the 71V547S100PFG is qualified for industrial temperature operation from –40°C to +85°C, with full DC and AC specifications guaranteed across this range. Its 3.3V ±5% supply tolerance and robust timing margins ensure reliable performance in uncooled industrial enclosures and telecom line cards.

71V547S100PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
10 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V547S100PFG FAQ

1.How can I place an order for 71V547S100PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V547S100PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V547S100PFG reliable?

The price and inventory of 71V547S100PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V547S100PFG is usually 5 days.

3.What payment methods are accepted for 71V547S100PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V547S100PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V547S100PFG?

71V547S100PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V547S100PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V547S100PFG?

For technical support, including 71V547S100PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V547S100PFG requirements.

6.How does Aetrix verify that 71V547S100PFG is sourced from the original manufacturer or authorized distributors?

All 71V547S100PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V547S100PFG meets industry standards.

7.What is the process for return or replacement of 71V547S100PFG?

All 71V547S100PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V547S100PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V547S100PFG part is unused and in its original packaging.

Return procedure for 71V547S100PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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