Renesas 71V547S100PFGI

Overview

71V547S100PFGI from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, flow-through outputs, and 4-word burst capability. It delivers 95 MHz operation (8 ns clock-to-data access), supports linear/interleaved burst ordering via LBO pin, and features three chip enables for depth expansion - used in high-speed packet buffering and network switch data path memory.

For engineers reviewing the 71V547S100PFGI datasheet, 71V547S100PFGI pinout, 71V547S100PFGI application, or 71V547S100PFGI equivalent, key selection criteria include ZBT™ bus turnaround elimination, 100-pin TQFP package compatibility, industrial temperature range (–40°C to +85°C), and synchronous byte write control (BW1–BW4) for partial-word updates without external logic.

Technical Context

The 71V547S100PFGI implements a synchronous, clock-driven interface where address/control registration occurs on the rising CLK edge, with data output appearing one cycle later via flow-through (unregistered) path. Its ZBT™ architecture eliminates dead cycles between read/write transitions by decoupling bus direction control from OE - only R/W and ADV/LD determine access type and address progression.

Burst operation is managed by an on-chip counter advanced synchronously when ADV/LD = HIGH; LBO selects linear or interleaved sequence (A0–A1). CEN provides clock gating for power management, while CE1/CE2/CE2 enable hierarchical chip select with one-cycle deselect and tri-state hold behavior.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin TQFP (14 mm × 20 mm), lead-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-100AXC and AS7C3256B-10JIN, the 71V547S100PFGI uniquely delivers ZBT™-enabled seamless read/write transitions, integrated burst sequencing, and granular byte-write control - making it optimal for high-efficiency packet processing and deterministic real-time buffering.

Availability

71V547S100PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V547S100PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a leader in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V547S100PFGI belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed data-path applications such as routers, switches, and baseband processors.

FAQ

What is the maximum operating frequency of the 71V547S100PFGI?

The 71V547S100PFGI is rated for 100 MHz operation, corresponding to a minimum clock cycle time (tCYC) of 15 ns. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply, with tCD (clock-to-data) ≤10 ns. The device achieves this performance using a high-volume 3.3V CMOS process and flow-through output architecture.

Does the 71V547S100PFGI support true ZBT™ (Zero Bus Turnaround) functionality?

Yes, the 71V547S100PFGI implements genuine ZBT™ architecture: it eliminates dead cycles between consecutive read and write operations by decoupling bus direction control from OE and using synchronous R/W and ADV/LD signals. This allows immediate back-to-back accesses without bus idle periods - confirmed in functional timing diagrams and truth tables in the official datasheet.

How does burst addressing work on the 71V547S100PFGI?

Burst addressing on the 71V547S100PFGI is controlled by the ADV/LD and LBO pins. When ADV/LD is sampled HIGH on a rising clock edge, the internal 2-bit burst counter increments, generating the next address in sequence. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) order for the four-word burst - both sequences wrap automatically after the fourth word.

Can the 71V547S100PFGI operate with OE tied permanently low?

Yes, OE can be tied low continuously because it is the only asynchronous signal and is not required for normal read/write operation. The device uses synchronous chip enables (CE1/CE2/CE2) and R/W to control data bus activity. OE is provided solely for optional asynchronous output disable - e.g., during system reset or bus sharing - and has no effect on internal timing or functionality when asserted.

What is the purpose of the three chip enable pins (CE1, CE2, CE2) on the 71V547S100PFGI?

The three chip enables provide flexible depth expansion: CE1 and CE2 are active-low, while CE2 is active-high. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. This configuration allows cascading multiple 71V547S100PFGI devices with shared control lines while enabling individual selection - essential for building wider or deeper memory subsystems without external decoding logic.