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Renesas 71V547S100PFGI8

Name: 71V547S100PFGI8
Brand: Renesas
SKU: 71V547S100PFGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V547S100PFGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V547S100PFGI8.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V547S100PFGI8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, flow-through outputs, and 4-word burst capability. It delivers 95 MHz operation (8 ns clock-to-data access), supports linear/interleaved burst ordering via LBO pin, and enables seamless read/write transitions without dead cycles - ideal for high-bandwidth packet buffering in network switches and telecom line cards.

For engineers reviewing the 71V547S100PFGI8 datasheet, 71V547S100PFGI8 pinout, 71V547S100PFGI8 application, or 71V547S100PFGI8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V-only supply operation, industrial temperature range (–40°C to +85°C), and support for individual byte write (BW1–BW4) and three chip enables (CE1/CE2/CE2) for depth expansion.

Technical Context

The 71V547S100PFGI8 implements a synchronous, clock-driven interface where all address and control signals-including R/W, ADV/LD, BWx, and CE-latch on the rising edge of CLK. Its ZBT™ architecture eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions within a single clock domain, enabled by internal burst counter and flow-through output path (no output register).

It features asynchronous OE for output tri-state control, synchronous CEN for clock gating, static LBO for burst order selection (linear vs. interleaved), and dedicated byte write enables supporting partial 9-bit writes. All inputs meet JEDEC-compliant setup/hold timing relative to CLK, with tCD = 10 ns max at 100 MHz operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits (4.5 Mbit); supports full-word or byte-selectable writes to four 9-bit data groups (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4)
Max Clock Frequency	100 MHz (tCYC = 15 ns min); enables 400 MB/s peak bandwidth in burst mode
Access Timing	tCD = 10 ns max (clock-high to valid data); ensures deterministic read latency for real-time buffer applications
Supply Voltage	3.3 V ±5%; requires single-rail power delivery with no 5 V or mixed-voltage support
Operating Temperature	–40°C to +85°C (industrial grade); validated for sustained operation in base station and industrial control environments
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential-access scenarios
Power Consumption	IDDA = 200 mA max (100 MHz, selected), ISB1 = 40 mA max (deselected, static); critical for thermal management in dense PCB layouts

Pinout & Package

Packaged in a JEDEC-standard 100-pin TQFP (14 mm × 20 mm, 0.5 mm pitch), the 71V547S100PFGI8 provides 17 address inputs (A0–A16), 36 bidirectional data I/Os (I/O0–I/O31 + I/OP1–I/OP4), 3 chip enables (CE1, CE2 active-low; CE2 active-high), and dedicated control pins including ADV/LD, LBO, CEN, R/W, BW1–BW4, CLK, and OE.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	Synchronous latched inputs; define 128K-word memory location; require setup/hold relative to CLK rising edge
CE1, CE2, CE2	Chip Enables	Three independent enables (CE1/CE2 low-active, CE2 high-active); enable depth expansion and hierarchical memory decoding
R/W	Read/Write Control	Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load operation; ignored during burst (ADV/LD high)
ADV/LD	Address Load / Burst Advance	Low = load new external address; high = increment internal burst counter; determines burst sequence initiation and wrap behavior
LBO	Burst Order Select	Static DC input; low = linear burst (0,1,2,3), high = interleaved burst (0,2,3,1); defines address progression for 4-word sequences
BW1–BW4	Byte Write Enables	Synchronous active-low enables for four 9-bit data groups; allow partial writes without disturbing other bytes in same word
CLK	System Clock Input	Primary timing reference; all synchronous operations referenced to rising edge; OE is the only asynchronous signal
OE	Output Enable	Asynchronous active-low control; places I/O pins in high-Z state regardless of clock or other controls; may be tied low for continuous read
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; input path registered on CLK rise; output path flow-through (no register), enabling minimal read latency

Key Features

Feature	Design Value
ZBT™ Architecture	Eliminates dead bus cycles between reads and writes by enabling immediate direction reversal - critical for full-duplex packet buffering in switch fabric interfaces
Flow-Through Outputs	Removes output register delay; data appears on I/O bus one clock after address/control latch, achieving minimum possible read latency (tCD = 10 ns)
4-Word Burst Mode	Reduces address bus toggling by 75% for sequential accesses; supported in both linear and interleaved orders per LBO pin state
Individual Byte Write	Enables precise 9-bit updates via BW1–BW4; avoids read-modify-write overhead and preserves integrity of adjacent data bytes
Three Chip Enables	Supports flexible memory depth expansion (e.g., 128K×72 or 256K×36) using standard logic without external decode complexity

Applications

Packet Buffering in Gigabit Ethernet Switches	Baseband Processing in 4G LTE Radio Units
Use Scenario: Temporarily stores ingress/egress Ethernet frames in cut-through or store-and-forward switching architectures requiring zero-turnaround memory access. IC Role / Device Role / Timing Role: High-speed synchronous SRAM acting as first-level packet buffer; accepts back-to-back read/write commands at line rate without bus stall. Use Value: ZBT™ eliminates inter-cycle dead time, enabling 100% bus utilization at 100 MHz - directly increasing switch throughput and reducing frame latency jitter.	Use Scenario: Buffers IQ samples between digital front-end (DFE) and channel processing blocks in remote radio heads (RRH) operating under strict timing constraints. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used in ping-pong configuration for real-time sample streaming; burst mode aligns with FFT/IFFT block sizes. Use Value: 4-word burst with linear addressing matches 128-point FFT data stride; flow-through outputs minimize pipeline stalls in multi-stage DSP chains.
Industrial PLC Data Logging Modules	Avionics ARINC 664 (AFDX) End Systems
Use Scenario: Captures sensor telemetry at high sampling rates (e.g., vibration, temperature) with deterministic write latency and non-volatile backup readiness. IC Role / Device Role / Timing Role: Local high-speed scratchpad memory interfacing to ARM Cortex-M7 or RISC-V MCU; accessed via parallel bus with byte-write granularity. Use Value: Individual byte write (BW1–BW4) allows efficient logging of heterogeneous sensor data types without overwriting unrelated fields in same 36-bit word.	Use Scenario: Implements virtual link buffers in AFDX endpoint devices requiring guaranteed latency, bandwidth allocation, and error-free transmission. IC Role / Device Role / Timing Role: Deterministic SRAM buffer synchronized to AFDX MAC clock; handles 64–1518 byte frames with burst-aligned storage and CRC-assisted integrity checking. Use Value: Industrial temp rating (–40°C to +85°C) and 3.3V supply ensure reliability in uncontrolled avionics enclosures; TQFP-100 eases conformal coating and thermal pad integration.

Packet Buffering in Gigabit Ethernet Switches

Baseband Processing in 4G LTE Radio Units

Use Scenario: Temporarily stores ingress/egress Ethernet frames in cut-through or store-and-forward switching architectures requiring zero-turnaround memory access.

IC Role / Device Role / Timing Role: High-speed synchronous SRAM acting as first-level packet buffer; accepts back-to-back read/write commands at line rate without bus stall.

Use Value: ZBT™ eliminates inter-cycle dead time, enabling 100% bus utilization at 100 MHz - directly increasing switch throughput and reducing frame latency jitter.

Use Scenario: Buffers IQ samples between digital front-end (DFE) and channel processing blocks in remote radio heads (RRH) operating under strict timing constraints.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used in ping-pong configuration for real-time sample streaming; burst mode aligns with FFT/IFFT block sizes.

Use Value: 4-word burst with linear addressing matches 128-point FFT data stride; flow-through outputs minimize pipeline stalls in multi-stage DSP chains.

Industrial PLC Data Logging Modules

Avionics ARINC 664 (AFDX) End Systems

Use Scenario: Captures sensor telemetry at high sampling rates (e.g., vibration, temperature) with deterministic write latency and non-volatile backup readiness.

IC Role / Device Role / Timing Role: Local high-speed scratchpad memory interfacing to ARM Cortex-M7 or RISC-V MCU; accessed via parallel bus with byte-write granularity.

Use Value: Individual byte write (BW1–BW4) allows efficient logging of heterogeneous sensor data types without overwriting unrelated fields in same 36-bit word.

Use Scenario: Implements virtual link buffers in AFDX endpoint devices requiring guaranteed latency, bandwidth allocation, and error-free transmission.

IC Role / Device Role / Timing Role: Deterministic SRAM buffer synchronized to AFDX MAC clock; handles 64–1518 byte frames with burst-aligned storage and CRC-assisted integrity checking.

Use Value: Industrial temp rating (–40°C to +85°C) and 3.3V supply ensure reliability in uncontrolled avionics enclosures; TQFP-100 eases conformal coating and thermal pad integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-100AXC	128K × 36, 3.3V, 100 MHz, but uses QDR-II+ dual-clock architecture with separate read/write ports; no ZBT™ or flow-through outputs	Requires separate read/write address buses and clock domains; better suited for true simultaneous access, not zero-turnaround burst buffering	Select only if system demands concurrent read/write bandwidth >200 MB/s; not drop-in compatible due to pinout, timing, and control logic differences
AS7C3256A-10JIN	128K × 32, 3.3V, 100 MHz, asynchronous OE, but lacks ZBT™, burst counter, ADV/LD, and byte write enables; simpler control interface	Designed for legacy parallel bus systems without burst or turnaround optimization; no LBO or BWx support	Use when cost sensitivity outweighs ZBT performance needs and 4-bit data width reduction (32 vs. 36) is acceptable for application data alignment

Compared with CY7C1371DV33-100AXC and AS7C3256A-10JIN, the 71V547S100PFGI8 uniquely delivers ZBT™-enabled zero-latency bus reversal, flow-through outputs for minimal tCD, and native 36-bit data width with byte-selectable writes - making it irreplaceable in applications demanding deterministic, high-efficiency burst buffering without architectural redesign.

Availability

71V547S100PFGI8 is available at Aetrix Electronics and suitable for network infrastructure, telecom baseband processing, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle support, and industrial-grade temperature performance.

Supply support for 71V547S100PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF power solutions for communications and computing markets.

The 71V547S100PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-bus-turnaround buffering in high-speed packet-switched networks, telecom infrastructure, and real-time embedded systems requiring deterministic latency and burst efficiency.

FAQ

What is the maximum operating frequency and corresponding clock cycle time for the 71V547S100PFGI8?

The 71V547S100PFGI8 is rated for 100 MHz operation with a minimum clock cycle time (tCYC) of 15 ns. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply, and is validated by AC characterization - not just typical conditions. The device achieves this while maintaining tCD ≤ 10 ns and supporting full 4-word burst transfers without timing violation.

Does the 71V547S100PFGI8 support true pin-compatible replacement for earlier speed grades like 71V547S85 or 71V547S90?

Yes, the 71V547S100PFGI8 is pin-compatible and functionally identical to lower-speed variants (e.g., 71V547S85PFGI8, 71V547S90PFGI8) within the same 100-pin TQFP package. All share identical pinout, voltage requirements, control logic, and feature set - only AC timing parameters differ. System designs qualified with S85/S90 can upgrade to 71V547S100PFGI8 without layout or firmware changes to achieve higher throughput.

How does the ZBT™ feature of the 71V547S100PFGI8 eliminate bus turnaround cycles?

The ZBT™ feature in the 71V547S100PFGI8 eliminates bus turnaround cycles by allowing immediate transition from a write to a read (or vice versa) without inserting idle clocks. This is achieved through internal synchronization that decouples bus direction control from external timing constraints - the R/W signal and ADV/LD state determine access type deterministically on each clock edge, and flow-through outputs ensure data validity aligns precisely with clock timing.

What is the role of the ADV/LD and LBO pins in burst operation of the 71V547S100PFGI8?

In the 71V547S100PFGI8, ADV/LD controls burst initiation and progression: when sampled low at CLK rise, it loads a new external address; when sampled high, it advances the internal 2-bit burst counter. LBO selects burst order - low enables linear sequence (0,1,2,3), high enables interleaved (0,2,3,1). Together, they define how the 4-word burst traverses memory addresses without requiring repeated address bus updates.

Can the 71V547S100PFGI8 operate with OE permanently tied low, and what is the impact on system timing?

Yes, OE can be permanently tied low in the 71V547S100PFGI8 since it is the only asynchronous signal and output drivers remain enabled continuously. This simplifies board design by removing OE timing constraints and eliminates potential metastability risks. With OE asserted, read data appears on I/O pins exactly tCD (≤10 ns) after CLK rise - fully synchronous behavior - and no additional timing margin is needed for OE assertion/deassertion.

71V547S100PFGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: 10 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V547S100PFGI8 FAQ

1.How can I place an order for 71V547S100PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V547S100PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V547S100PFGI8 reliable?

The price and inventory of 71V547S100PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V547S100PFGI8 is usually 5 days.

3.What payment methods are accepted for 71V547S100PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V547S100PFGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V547S100PFGI8?

71V547S100PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V547S100PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V547S100PFGI8?

For technical support, including 71V547S100PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V547S100PFGI8 requirements.

6.How does Aetrix verify that 71V547S100PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V547S100PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V547S100PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V547S100PFGI8?

All 71V547S100PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V547S100PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V547S100PFGI8 part is unused and in its original packaging.

Return procedure for 71V547S100PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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