Renesas 71V547S80PFG

Overview

71V547S80PFG from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, flow-through outputs, and 4-word burst capability. It delivers 95 MHz operation (8 ns clock-to-data access), supports linear/interleaved burst ordering via LBO pin, and features three chip enables for depth expansion - used in high-speed packet buffering, network switch fabric control, and real-time DSP memory subsystems.

For engineers reviewing the 71V547S80PFG datasheet, 71V547S80PFG pinout, 71V547S80PFG application, or 71V547S80PFG equivalent, key selection criteria include ZBT™ bus turnaround elimination, synchronous 3.3V operation with ±5% tolerance, JEDEC-standard 100-pin TQFP packaging, and support for individual byte write (BW1–BW4) and burst counter functionality.

Technical Context

The 71V547S80PFG implements a synchronous, clock-driven interface where address/control registration occurs on the rising CLK edge, with data output flowing through (no output register) and data input registered. Its ZBT™ architecture eliminates dead cycles between read/write transitions by decoupling bus direction control from timing-critical sequencing.

It integrates an on-chip 4-word burst counter advanced by ADV/LD = HIGH, with burst order selected statically via LBO (linear or interleaved). All synchronous inputs - including R/W, CE1/CE2/CE2, BW1–BW4, and ADV/LD - are sampled synchronously to CLK, while OE remains the sole asynchronous control.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch and exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-100AXC and AS7C3128P-10TIN, the 71V547S80PFG uniquely balances ZBT™ bus efficiency, integrated burst addressing, and industrial temperature support in a single 100-pin TQFP - making it optimal for latency-constrained, mixed-access memory subsystems where external burst logic must be minimized.

Availability

71V547S80PFG is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric control, and industrial real-time controller applications requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for 71V547S80PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V547S80PFG belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-turnaround memory subsystems in high-speed networking and real-time embedded systems where deterministic latency and burst efficiency are critical.

FAQ

What does the "S80" suffix in 71V547S80PFG indicate?

The "S80" denotes the speed grade: 8 ns clock-to-data access time (tCD) with a minimum clock cycle time (tCYC) of 10.5 ns, corresponding to a maximum operating frequency of 95 MHz. This grade is validated across commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature ranges. The 71V547S80PFG meets these timing specs under VDD = 3.3 V ±5% and specified load conditions.

Does the 71V547S80PFG support true dual-port operation?

No, the 71V547S80PFG is a single-port synchronous SRAM with time-multiplexed read/write access controlled by the R/W pin. It does not support simultaneous independent read and write operations like QDR or DDR SRAMs. However, its ZBT™ feature minimizes bus turnaround delay, enabling near-concurrent access efficiency in pipelined systems - a key distinction from true dual-port devices.

How is burst addressing controlled on the 71V547S80PFG?

Burst addressing is managed internally by a 2-bit counter advanced on each rising CLK edge when ADV/LD = HIGH. The base address is loaded when ADV/LD = LOW. The LBO pin selects between linear (LBO = LOW) and interleaved (LBO = HIGH) 4-word sequences. The 71V547S80PFG requires no external address increment logic during burst cycles - the counter handles A0–A1 progression automatically.

Can OE be left unconnected or tied permanently in the 71V547S80PFG?

Yes - OE is asynchronous and can be tied LOW for permanent output enable, simplifying design when bus contention is managed externally. If unused, OE may be left unconnected only if system-level bus arbitration guarantees no conflict; however, tying OE LOW is the recommended practice for predictable flow-through output behavior. The 71V547S80PFG outputs enter high-Z during power-up regardless of OE state.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V547S80PFG?

CE1 and CE2 are active-low enables; CE2 is active-high. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. This triple-enable scheme allows hierarchical memory decoding and seamless depth expansion across multiple 71V547S80PFG devices. Deselection occurs in one clock cycle, tri-stating the data bus promptly - a critical feature for multi-SRAM bus sharing.