Renesas 71V547S80PFG8

Overview

71V547S80PFG8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, flow-through outputs, and 4-word burst capability. It delivers 95 MHz operation (8 ns clock-to-data access), supports linear/interleaved burst ordering via LBO pin, and features three chip enables for depth expansion in high-speed networking and packet buffering applications.

For engineers reviewing the 71V547S80PFG8 datasheet, 71V547S80PFG8 pinout, 71V547S80PFG8 application, or 71V547S80PFG8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, 100-pin TQFP package compatibility, 3.3V ±5% supply tolerance, industrial temperature range (–40°C to +85°C), and synchronous control timing with CEN, ADV/LD, and individual byte write (BW1–BW4).

Technical Context

The 71V547S80PFG8 implements a synchronous, clock-driven memory interface where address/control registration occurs on the rising CLK edge, with data output flowing through (no output register) and OE remaining asynchronous. Its ZBT™ architecture eliminates dead cycles between read/write transitions by decoupling bus direction control from external timing constraints.

It integrates an on-chip 4-word burst counter advanced by ADV/LD, with burst order selected statically via LBO (linear or interleaved). Chip enable logic uses three inputs-CE1 and CE2 active-low, CE2 active-high-enabling flexible depth expansion while maintaining one-cycle deselect and tri-state output behavior.

Key Specifications

Pinout & Package

71V547S80PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch, with exposed thermal pad (PFG suffix). Pin functions are fully synchronous except OE (asynchronous) and LBO (static DC input).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV33-8BGXI and AS7C33128P33Z-8TIN, the 71V547S80PFG8 uniquely delivers ZBT™-enabled zero-dead-cycle bus turnaround, integrated burst counter, and synchronous flow-through outputs-making it optimal for clock-driven packet buffering where deterministic latency and minimal controller overhead are critical.

Availability

71V547S80PFG8 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure, industrial automation controllers, and embedded real-time systems requiring stable component supply, long-lifecycle support, and industrial temperature compliance.

Supply support for 71V547S80PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V547S80PFG8 belongs to IDT's ZBT™ synchronous SRAM product line, engineered specifically for zero-latency bus turnaround in packet-switched networks, telecom buffers, and real-time control subsystems demanding predictable timing and burst efficiency.

FAQ

What is the maximum operating frequency of the 71V547S80PFG8?

The 71V547S80PFG8 is rated for 95 MHz operation, corresponding to a minimum clock cycle time (tCYC) of 10.5 ns. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply voltage. The 'S80' speed grade denotes 8 ns clock-to-data access (tCD), enabling deterministic timing in high-throughput buffer applications.

Does the 71V547S80PFG8 support both linear and interleaved burst modes?

Yes, the 71V547S80PFG8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear bursts (A0, A1, A2, A3); when LBO is HIGH, it performs interleaved bursts (A0, A2, A1, A3). LBO is a static DC input and may be tied to VSS or VDD depending on required burst order.

How does the ZBT™ feature eliminate bus turnaround cycles in the 71V547S80PFG8?

The ZBT™ (Zero Bus Turnaround) feature in the 71V547S80PFG8 removes dead cycles between consecutive read and write operations by decoupling bus direction control from external timing. Unlike conventional SSRAMs requiring OE and R/W coordination with bus turnaround delays, the 71V547S80PFG8 internally manages direction transitions synchronously with CLK, allowing immediate back-to-back accesses without idle clocks.

Can the 71V547S80PFG8 operate with only two chip enables instead of three?

Yes-the 71V547S80PFG8 requires only one valid chip enable condition to function: CE1 = LOW, CE2 = LOW, and CE2 = HIGH. If CE2 is unused, it must be held HIGH (not floating) to satisfy the enable condition. CE1 and CE2 may be tied together for simplified two-enable operation, but CE2's inverted polarity must be respected in logic design.

What is the role of the ADV/LD pin in burst operation of the 71V547S80PFG8?

The ADV/LD pin controls the 71V547S80PFG8's burst counter: when sampled LOW at the rising CLK edge, it loads a new external address into the address register; when sampled HIGH, it advances the internal burst counter to generate the next sequential address. This dual-mode operation enables single-cycle address loading and automatic 4-word burst sequencing without external address increment logic.