Renesas 71V547S80PFGI8

Overview

71V547S80PFGI8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous SRAM with Zero Bus Turnaround (ZBT™) architecture, flow-through outputs, and 4-word burst capability. It delivers 95 MHz operation (8 ns clock-to-data access), supports linear/interleaved burst ordering via LBO pin, and features three chip enables for depth expansion in high-speed networking and packet buffering applications.

For engineers reviewing the 71V547S80PFGI8 datasheet, 71V547S80PFGI8 pinout, 71V547S80PFGI8 application, or 71V547S80PFGI8 equivalent, key selection criteria include ZBT™ bus turnaround elimination, 3.3V ±5% supply tolerance, industrial temperature range (–40°C to +85°C), JEDEC-standard 100-pin TQFP package, and synchronous control with ADV/LD-driven burst counter.

Technical Context

The 71V547S80PFGI8 implements a synchronous, clock-triggered memory interface where address/control registration occurs on the rising CLK edge when CEN = LOW, ADV/LD = LOW, and chip enables are asserted. Its ZBT™ architecture eliminates dead cycles between read/write transitions by decoupling bus direction control from data timing - writes complete one cycle before reads begin on the same bus.

Burst operation is managed by an on-chip counter advanced synchronously on CLK rising edges when ADV/LD = HIGH; LBO selects linear or interleaved 4-word sequences. Output enable (OE) remains asynchronous, allowing dynamic tri-state control independent of clock phase, while all other inputs - including BW1–BW4 byte write enables and R/W - are fully synchronous with setup/hold timing referenced to CLK.

Key Specifications

Pinout & Package

71V547S80PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin 1 identifier is marked with a dot or beveled corner per standard orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV33-100AXI and AS7C3128A-10JIN, the 71V547S80PFGI8 uniquely delivers ZBT™-enabled zero-cycle bus turnaround and integrated burst sequencing - critical for maximizing bandwidth efficiency in packet-processing and DSP pipelines where consecutive read/write alternation is frequent.

Availability

71V547S80PFGI8 is available at Aetrix Electronics and suitable for high-speed networking equipment, industrial automation controllers, and telecom baseband modules requiring stable component supply, long-term lifecycle support, and industrial-temperature reliability.

Supply support for 71V547S80PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor leader specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V547S80PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for applications demanding deterministic, low-latency, burst-capable memory with zero bus turnaround - targeting network switches, routers, and baseband processors.

FAQ

What does the 'S80' in 71V547S80PFGI8 indicate?

The 'S80' suffix denotes the speed grade: 8 ns clock-to-data access time (tCD), corresponding to a maximum operating frequency of 95 MHz. This is confirmed in the AC Electrical Characteristics table where 71V547S80 specifies tCD ≤ 8 ns. The 71V547S80PFGI8 meets this timing under industrial conditions (–40°C to +85°C) with VDD = 3.3 V ±5%.

Does 71V547S80PFGI8 support true ZBT™ operation with no dead cycles between read and write?

Yes, the 71V547S80PFGI8 implements genuine Zero Bus Turnaround (ZBT™) architecture. As stated in the datasheet description, it eliminates dead bus cycles when turning the bus around between reads and writes. This is achieved through synchronized control logic and flow-through outputs, enabling back-to-back read/write operations without insertion of idle cycles - a core feature validated across all timing waveforms for the 71V547S80PFGI8.

How is burst addressing controlled on the 71V547S80PFGI8?

Burst addressing on the 71V547S80PFGI8 is controlled by the ADV/LD and LBO pins. When ADV/LD = HIGH on a rising CLK edge, the internal burst counter advances; when ADV/LD = LOW, a new external address is loaded. LBO selects linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word sequences. This dual-signal mechanism is explicitly defined in the Functional Description and Burst Sequence Tables for the 71V547S80PFGI8.

Can OE be tied permanently low on the 71V547S80PFGI8?

Yes, OE can be tied permanently low on the 71V547S80PFGI8. The datasheet states: "In normal operation, OE can be tied low." Since OE is the only asynchronous signal and its sole function is to place outputs in high-impedance state, tying it low ensures continuous output drive - appropriate for dedicated bus implementations where external tri-state control is unnecessary.

What is the valid voltage range for VDD on the 71V547S80PFGI8?

The 71V547S80PFGI8 requires a VDD supply of 3.3 V ±5%, i.e., 3.135 V to 3.465 V, as specified in the Recommended DC Operating Conditions table. This range applies across both commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature grades. Operation outside this window may cause functional failure or parametric violation.