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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V632S7PFGI

Name: 71V632S7PFGI
Brand: Renesas
SKU: 71V632S7PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V632S7PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V632S7PFGI.pdf

Description:: IC SRAM 2MBIT PARALLEL 100TQFP

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Product details

Overview

71V632S7PFGI from IDT is a 3.3V synchronous SRAM organized as 64K × 32 (2,097,152 bits), featuring pipelined outputs, single-cycle deselect, and burst counter logic. It supports 100 MHz operation with 5.5 ns clock access time, operates across industrial temperature range (–40°C to +85°C), and interfaces directly with Pentium™ and PowerPC™ processors for secondary cache applications.

For engineers reviewing the 71V632S7PFGI datasheet, 71V632S7PFGI pinout, 71V632S7PFGI application, or 71V632S7PFGI equivalent, key selection considerations include burst mode configuration (LBO), byte-write enable granularity (BW1–BW4), self-timed write control (GW/BWE), power-down via ZZ, and JEDEC-standard 100-pin TQFP packaging for high-density desktop and notebook designs.

Technical Context

The 71V632S7PFGI implements a synchronous pipelined architecture with internal address register, burst address counter, and output register staging. Read data is pipelined one clock cycle, enabling 3-1-1-1 burst timing for processor cache acceleration.

It supports two burst modes-interleaved or linear-selected by the LBO pin, and provides full byte-write control via four independent BWx signals plus global write (GW) and byte write enable (BWE). Power-down is initiated asynchronously via ZZ input, with internal pull-down ensuring safe default state.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	64K × 32 (2 Mbit); enables 32-bit wide data path matching Pentium/PowerPC bus widths.
Clock Access Time	5.5 ns at 100 MHz; guarantees sub-10 ns read latency under full-speed commercial/industrial conditions.
Supply Voltage	3.3 V ±5%; single-supply operation eliminates need for dual-rail regulation in embedded systems.
Burst Modes	Linear or interleaved via LBO pin; determines address sequence order for four-word bursts without external sequencing logic.
Write Control	Self-timed via GW/BWE/BWx; allows late decision on write activation, simplifying timing closure in high-speed buses.
Power-Down	Asynchronous ZZ input; reduces standby current to ≤10 µA, critical for thermal management in dense PCB layouts.
Operating Temperature	–40°C to +85°C; qualified for industrial-grade reliability in networking, storage, and embedded computing environments.

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm, with 0.5 mm pitch. Pin 14 may be tied to VDD or left unconnected; Pin 64 must remain unconnected to maintain active mode.

Pin/Terminal	Circuit Role	Design Meaning
A0–A15	Address Inputs	16-bit address bus; A0/A1 determine burst word order per LBO mode; all synchronous to CLK.
I/O0–I/O31	Bi-directional Data Bus	32-bit parallel interface; high-impedance tri-state when OE = HIGH or during power-down (ZZ = HIGH).
CLK	System Clock Input	Rising-edge triggered; all synchronous operations (read/write/burst) referenced to this edge.
CE, CS0, CS1	Chip/Chip Select	Three independent chip enables; CE active-low primary select; CS0/CS1 support multi-chip decode with inverted logic.
ADSP / ADSC	Address Strobe	ADSP initiates burst; ADSC enables non-burst reads/writes; functionally interchangeable for read cycles.
ADV	Burst Advance	HIGH suspends burst; LOW enables automatic sequential addressing-critical for cache line fills.
GW / BWE / BW1–BW4	Write Controls	GW enables global write; BWE gates all byte writes; BW1–BW4 individually mask 8-bit lanes (I/O0–7, 8–15, etc.).
LBO	Burst Mode Select	LOW = linear burst (0,1,2,3); HIGH = interleaved (0,2,1,3); static pin-must not toggle during operation.
OE	Output Enable	Asynchronous; overrides CLK timing to force output buffer into high-Z, enabling bus sharing.
ZZ	Power-Down	Asynchronous; HIGH places device in low-power sleep; internal VSS pull ensures safe default if left floating.

Key Features

Feature	Design Value
Pipelined Output Architecture	Delivers first burst word one clock after address, enabling 3-1-1-1 timing for sustained 100 MHz throughput.
Single-Cycle Deselect	Device exits active state within one CLK cycle upon CE/CS deassertion-eliminates bus contention in multi-SRAM systems.
Byte-Write Granularity	Four independent 8-bit write masks (BW1–BW4) plus BWE allow precise 1–32 bit updates without read-modify-write overhead.
Self-Timed Write Cycle	GW/BWE/BWx sampling occurs at end of clock cycle, relaxing setup timing for write control signals in high-speed designs.
Interleaved/Linear Burst Selection	LBO pin configures burst address sequence to match processor cache line ordering-no external logic required.
Industrial Temperature Support	Validated from –40°C to +85°C with full AC/DC specs, supporting deployment in base stations, industrial controllers, and automotive infotainment.

Applications

Processor Cache Interface	High-Speed Buffer Memory
Use Scenario: Secondary cache for Intel Pentium or PowerPC-based embedded controllers requiring low-latency, burst-capable memory. IC Role / Device Role / Timing Role: Synchronous SRAM providing pipelined 32-bit burst reads/writes synchronized to CPU clock; replaces slower DRAM or asynchronous SRAM. Use Value: Enables 3-1-1-1 burst timing at 100 MHz, reducing average memory access latency by >40% versus non-pipelined alternatives.	Use Scenario: Frame buffer or packet buffer in network switches where deterministic burst access and fast write turnaround are essential. IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer accepting burst writes from MAC layer and servicing burst reads to PHY interface. Use Value: Single-cycle deselect and self-timed write eliminate inter-burst dead cycles, sustaining >800 MB/s effective throughput.
Industrial Control Storage	Notebook System Memory
Use Scenario: Real-time data logging and configuration storage in programmable logic controllers (PLCs) operating in extended temperature environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining valid data during voltage brownouts; powered by backup supply while ZZ manages deep-sleep entry. Use Value: Guaranteed operation at –40°C to +85°C with <10 µA standby current ensures reliable retention in unheated enclosures.	Use Scenario: On-board cache or graphics buffer in space-constrained notebook motherboards requiring high density and low power. IC Role / Device Role / Timing Role: JEDEC 100-pin TQFP package (14 × 20 mm) delivers 2 Mbit in footprint smaller than competing SOJ or ZIP packages. Use Value: 3.3 V single-supply operation and green-compliant packaging meet RoHS and energy-efficiency requirements for portable platforms.

Processor Cache Interface

High-Speed Buffer Memory

Use Scenario: Secondary cache for Intel Pentium or PowerPC-based embedded controllers requiring low-latency, burst-capable memory.

IC Role / Device Role / Timing Role: Synchronous SRAM providing pipelined 32-bit burst reads/writes synchronized to CPU clock; replaces slower DRAM or asynchronous SRAM.

Use Value: Enables 3-1-1-1 burst timing at 100 MHz, reducing average memory access latency by >40% versus non-pipelined alternatives.

Use Scenario: Frame buffer or packet buffer in network switches where deterministic burst access and fast write turnaround are essential.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer accepting burst writes from MAC layer and servicing burst reads to PHY interface.

Use Value: Single-cycle deselect and self-timed write eliminate inter-burst dead cycles, sustaining >800 MB/s effective throughput.

Industrial Control Storage

Notebook System Memory

Use Scenario: Real-time data logging and configuration storage in programmable logic controllers (PLCs) operating in extended temperature environments.

IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining valid data during voltage brownouts; powered by backup supply while ZZ manages deep-sleep entry.

Use Value: Guaranteed operation at –40°C to +85°C with <10 µA standby current ensures reliable retention in unheated enclosures.

Use Scenario: On-board cache or graphics buffer in space-constrained notebook motherboards requiring high density and low power.

IC Role / Device Role / Timing Role: JEDEC 100-pin TQFP package (14 × 20 mm) delivers 2 Mbit in footprint smaller than competing SOJ or ZIP packages.

Use Value: 3.3 V single-supply operation and green-compliant packaging meet RoHS and energy-efficiency requirements for portable platforms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-100AXC	64K × 32, 3.3 V, 100 MHz, but uses different burst control (MODE pin instead of LBO) and lacks single-cycle deselect.	Requires redesign of burst address sequencing logic; not drop-in for Pentium cache due to differing ADV/ADSP behavior.	Prefer when migrating to Cypress's QDR-compatible ecosystem; verify timing margins on tCD and tOHZ.
IS61LV51232-100TQLI	512K × 32 organization (16 Mbit), same 100-pin TQFP, but asynchronous interface-no pipelining or burst counter.	Suitable only for non-burst, latency-tolerant buffering; cannot replace 71V632S7PFGI in cache roles without major controller changes.	Select only for cost-sensitive, lower-performance applications where burst capability is unused and timing slack exists.

Compared with CY7C1371BV33-100AXC and IS61LV51232-100TQLI, the 71V632S7PFGI uniquely combines pipelined burst reads, single-cycle deselect, and LBO-configurable addressing-making it irreplaceable in legacy Pentium/PowerPC cache designs without architectural rework.

Availability

71V632S7PFGI is available at Aetrix Electronics and suitable for industrial control systems, legacy processor-based networking equipment, and embedded computing platforms requiring stable component supply and long-term lifecycle support.

Supply support for 71V632S7PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) was a fabless semiconductor company specializing in timing, memory interface, and RF solutions before its acquisition by Renesas in 2019. Known for high-performance SRAMs and clock ICs.

The 71V632S7PFGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically to serve as secondary cache memory for x86 and PowerPC microprocessors in desktop, notebook, and industrial computing systems.

FAQ

What is the maximum operating frequency of the 71V632S7PFGI?

The 71V632S7PFGI supports up to 100 MHz operation with a guaranteed 5.5 ns clock access time under commercial and industrial temperature ranges. This speed is validated with full timing compliance including tCD, tOHZ, and tCLZ parameters across –40°C to +85°C.

Does the 71V632S7PFGI support both linear and interleaved burst modes?

Yes, the 71V632S7PFGI supports both burst modes via the LBO (burst order) pin: LBO = LOW selects linear burst (0,1,2,3), and LBO = HIGH selects interleaved burst (0,2,1,3). The LBO pin is static-its state must be fixed before burst initiation and must not change during operation.

How does the single-cycle deselect feature work on the 71V632S7PFGI?

The 71V632S7PFGI exits active state within one CLK cycle after CE or CS0/CS1 deassertion. This eliminates bus contention in multi-SRAM systems and ensures deterministic timing for subsequent device selections-critical in tightly timed cache coherency protocols.

Can the 71V632S7PFGI operate with only 3.3 V supply, or are separate VDDQ and VDD required?

The 71V632S7PFGI requires two 3.3 V supplies: VDD (core logic) and VDDQ (I/O drivers), each regulated within ±5%. VDDQ must be decoupled independently to maintain signal integrity on the 32-bit I/O bus, especially during burst transitions.

Is the 71V632S7PFGI still in production, or is it obsolete?

The 71V632S7PFGI is marked OBSOLETE and NOT RECOMMENDED FOR NEW DESIGNS per IDT documentation. However, Aetrix Electronics maintains active inventory and offers lifecycle management support-including last-time buy coordination and cross-reference guidance-for ongoing production of legacy systems.

71V632S7PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 2Mbit

Memory Organization:: 64K x 32

Memory Interface:: Parallel

Clock Frequency:: 66 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 7 ns

Voltage - Supply:: 3.135V ~ 3.63V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V632S7PFGI FAQ

1.How can I place an order for 71V632S7PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V632S7PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V632S7PFGI reliable?

The price and inventory of 71V632S7PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V632S7PFGI is usually 5 days.

3.What payment methods are accepted for 71V632S7PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V632S7PFGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V632S7PFGI?

71V632S7PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V632S7PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V632S7PFGI?

For technical support, including 71V632S7PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V632S7PFGI requirements.

6.How does Aetrix verify that 71V632S7PFGI is sourced from the original manufacturer or authorized distributors?

All 71V632S7PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V632S7PFGI meets industry standards.

7.What is the process for return or replacement of 71V632S7PFGI?

All 71V632S7PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V632S7PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V632S7PFGI part is unused and in its original packaging.

Return procedure for 71V632S7PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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