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Renesas 71V65603S100BG8

Name: 71V65603S100BG8
Brand: Renesas
SKU: 71V65603S100BG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65603S100BG8

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V65603S100BG8.pdf

Description:: IC SRAM 9MBIT PAR 119PBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

71V65603S100BG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports 4-word burst (linear or interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking line cards for packet buffering with deterministic latency.

For engineers reviewing the 71V65603S100BG8 datasheet, 71V65603S100BG8 pinout, 71V65603S100BG8 application, or 71V65603S100BG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal stability.

Technical Context

The 71V65603S100BG8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data are registered on the rising CLK edge. Its ZBT feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access - enabled via dedicated ADV/LD and LBO pins that control burst sequencing and address loading.

It integrates input/output registers, an on-chip burst counter, and three chip enables (CE1, CE2, CE2) with asymmetric polarity (CE2 active-high). Output enable (OE) remains asynchronous for flexible output gating, while ZZ provides asynchronous sleep mode with guaranteed data retention and internal clock gating.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9.4 Mbit); supports high-bandwidth data paths in telecom and packet-switching systems.
Max Clock Frequency	150 MHz; enables 6.67 ns cycle time for real-time buffer management in 10G+ line interfaces.
Access Time	3.8 ns clock-to-data (tCD); guarantees deterministic output timing for pipelined system synchronization.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupled power domains simplify PCB layout and noise isolation.
Operating Temperature	–40°C to +85°C; qualified for industrial-grade deployment in base station and carrier-grade equipment.
Burst Capability	4-word linear/interleaved burst; reduces address bus traffic and improves throughput in sequential access patterns.
Byte Write Control	Four independent BW1–BW4 signals; allows partial-word writes without read-modify-write overhead.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled.
CLK	Clock Input	Rising-edge-triggered master clock; all synchronous timing referenced to this signal (except OE and ZZ).
R/W	Read/Write Control	Synchronous command signal determining data direction for load-cycle initiation; sampled with ADV/LD.
ADV/LD	Advance Burst / Load Address	Controls burst counter increment (HIGH) or external address load (LOW); defines burst vs. random access mode.
LBO	Linear/Interleaved Burst Order	Static input selecting burst sequence: LOW = linear, HIGH = interleaved; must remain stable during operation.
BW1–BW4	Byte Write Enables	Active-low synchronous controls for 9-bit byte segments; enables granular 36-bit word updates without full-word overwrite.
CE1, CE2, CE2	Chip Enables	Three enables with mixed polarity (CE2 active-high); support depth expansion and hierarchical memory decoding.
OE	Output Enable	Asynchronous, active-low; tri-states I/Os independently of clock - simplifies output timing control.
ZZ	Sleep Mode	Asynchronous, active-high; gates internal clock and reduces power to minimum while retaining data.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered inputs/outputs eliminate external latch requirements.

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates bus turnaround dead cycles between reads and writes - enabling continuous 150 MHz throughput without inter-cycle gaps.
Pipelined Outputs	Internally synchronized output buffer enable removes need for external OE timing control; outputs align deterministically to CLK.
Single R/W Pin	Reduces control bus complexity versus separate RD/WR signals; simplifies FPGA or ASIC interface logic design.
4-Word Burst Counter	Generates sequential addresses internally after initial load - cuts address bus activity by 75% in streaming applications.
Individual Byte Write	Enables precise 9-bit segment updates without disturbing other bytes - critical for header modification in packet buffers.
Three Chip Enables	Supports seamless depth expansion (e.g., 2× devices for 72-bit width) with minimal glue logic or address decoding.

Applications

Telecom Packet Buffering	High-Speed Test Equipment Memory
Use Scenario: Real-time buffering of variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: Primary high-speed FIFO buffer interfacing directly to SerDes PHY and switch fabric controller. Use Value: ZBT architecture ensures no bus idle cycles during rapid read-after-write transitions required for packet classification and forwarding.	Use Scenario: Capturing high-frequency digital waveforms in automated test equipment (ATE) at >100 MS/s sampling rates. IC Role / Device Role / Timing Role: High-throughput capture memory staging data before transfer to host processor or analysis engine. Use Value: 150 MHz clock rate and pipelined outputs guarantee sustained bandwidth for continuous streaming without pipeline stalls.
Industrial PLC Data Logging	Avionics Data Acquisition Buffer
Use Scenario: Cyclic logging of sensor inputs (analog/digital) in ruggedized programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Nonvolatile-buffered RAM holding timestamped process data prior to flash storage or network upload. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation and low-power retention during idle periods.	Use Scenario: Buffering multi-channel flight sensor data (IMU, pressure, temperature) in airborne data concentrators with deterministic timing. IC Role / Device Role / Timing Role: Synchronous SRAM acting as time-critical intermediate storage between ADCs and ARINC-429 or AFDX interface controllers. Use Value: 3.8 ns tCD and burst capability meet tight jitter and latency constraints mandated by DO-254 safety-critical avionics designs.

Telecom Packet Buffering

High-Speed Test Equipment Memory

Use Scenario: Real-time buffering of variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: Primary high-speed FIFO buffer interfacing directly to SerDes PHY and switch fabric controller.

Use Value: ZBT architecture ensures no bus idle cycles during rapid read-after-write transitions required for packet classification and forwarding.

Use Scenario: Capturing high-frequency digital waveforms in automated test equipment (ATE) at >100 MS/s sampling rates.

IC Role / Device Role / Timing Role: High-throughput capture memory staging data before transfer to host processor or analysis engine.

Use Value: 150 MHz clock rate and pipelined outputs guarantee sustained bandwidth for continuous streaming without pipeline stalls.

Industrial PLC Data Logging

Avionics Data Acquisition Buffer

Use Scenario: Cyclic logging of sensor inputs (analog/digital) in ruggedized programmable logic controllers operating in harsh environments.

IC Role / Device Role / Timing Role: Nonvolatile-buffered RAM holding timestamped process data prior to flash storage or network upload.

Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode ensure reliable operation and low-power retention during idle periods.

Use Scenario: Buffering multi-channel flight sensor data (IMU, pressure, temperature) in airborne data concentrators with deterministic timing.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as time-critical intermediate storage between ADCs and ARINC-429 or AFDX interface controllers.

Use Value: 3.8 ns tCD and burst capability meet tight jitter and latency constraints mandated by DO-254 safety-critical avionics designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-133AXC	256K × 36-bit, 133 MHz max, 4.5 ns tCD; uses different burst control (MODE pin instead of LBO) and lacks ZZ sleep mode.	Compatible for non-sleep, lower-frequency ZBT applications; requires redesign of burst order logic and power management.	Select when cost sensitivity outweighs need for 150 MHz speed or deep-sleep functionality.
AS7C33256PFSIG	256K × 36-bit, 166 MHz max, but asynchronous OE and no ZBT architecture; supports standard SRAM timing only.	Not suitable for zero-turnaround systems; requires external logic for bus turnaround management and adds timing uncertainty.	Choose only for legacy SRAM-compatible designs where ZBT is not required and higher clock rate alone is insufficient.

Compared with CY7C1362BV33-133AXC and AS7C33256PFSIG, the 71V65603S100BG8 uniquely delivers 150 MHz ZBT operation with integrated sleep mode and industrial temperature support - making it optimal for next-generation telecom and avionics buffers requiring both performance and reliability.

Availability

71V65603S100BG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and aerospace data acquisition systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for 71V65603S100BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S100BG8 belongs to Renesas' high-speed ZBT SRAM product line, engineered specifically for deterministic, low-latency buffering in packet-switched networks and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V65603S100BG8?

The 71V65603S100BG8 is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves 3.8 ns clock-to-data access time (tCD) at this speed, enabling deterministic timing in high-throughput buffer applications.

Does the 71V65603S100BG8 support true zero bus turnaround (ZBT)?

Yes, the 71V65603S100BG8 implements genuine ZBT™ functionality as defined by Renesas. It eliminates dead cycles between consecutive read and write operations by overlapping bus direction changes with internal memory access - confirmed by its synchronous ADV/LD control, pipelined output registers, and burst counter architecture detailed in the functional timing diagrams and truth tables.

What package type is used for the 71V65603S100BG8?

The 71V65603S100BG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), measuring 14 mm × 20 mm. This package is lead-free, RoHS-compliant, and features exposed pad thermal enhancement. Pin configuration matches PKG100 as documented in the official Renesas datasheet revision 6.42.

How does the burst mode operate on the 71V65603S100BG8?

The 71V65603S100BG8 supports 4-word burst sequences controlled by the LBO pin (linear or interleaved) and the ADV/LD signal. When ADV/LD = HIGH, the internal burst counter increments; when ADV/LD = LOW, an external address is loaded. Burst operation is fully synchronous and requires no additional address bus cycles - reducing control overhead in streaming applications.

Is the 71V65603S100BG8 compatible with industrial temperature requirements?

Yes, the 71V65603S100BG8 is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly stated in the "Recommended Operating Temperature and Supply Voltage" table and verified under Absolute Maximum Ratings. It meets the thermal robustness needed for deployment in base stations, factory automation controllers, and outdoor networking equipment.

71V65603S100BG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V65603S100BG8 FAQ

1.How can I place an order for 71V65603S100BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65603S100BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65603S100BG8 reliable?

The price and inventory of 71V65603S100BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S100BG8 is usually 5 days.

3.What payment methods are accepted for 71V65603S100BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S100BG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65603S100BG8?

71V65603S100BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65603S100BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65603S100BG8?

For technical support, including 71V65603S100BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S100BG8 requirements.

6.How does Aetrix verify that 71V65603S100BG8 is sourced from the original manufacturer or authorized distributors?

All 71V65603S100BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S100BG8 meets industry standards.

7.What is the process for return or replacement of 71V65603S100BG8?

All 71V65603S100BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S100BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65603S100BG8 part is unused and in its original packaging.

Return procedure for 71V65603S100BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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