Renesas 71V65603S100BGI

Overview

71V65603S100BGI from Renesas Electronics is a 9,437,184-bit (256K × 36) 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150MHz operation (3.8ns clock-to-data access), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write (BW1–BW4), three chip enables (CE1/CE2/CE2), and operates across –40°C to +85°C for industrial applications in high-speed networking and packet buffering.

For engineers reviewing the 71V65603S100BGI datasheet, 71V65603S100BGI pinout, 71V65603S100BGI application, or 71V65603S100BGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst sequence control via LBO, and industrial temperature support without derating.

Technical Context

The 71V65603S100BGI implements a fully synchronous, pipelined architecture where address and control signals are registered on the rising CLK edge, with data output valid two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by internally synchronizing OE and supporting burst counter advancement via ADV/LD.

It supports linear or interleaved 4-word bursts selected by static LBO input, uses three chip enables (CE1/CE2 active-low, CE2 active-high) for depth expansion, and includes asynchronous ZZ sleep mode and OE for output control - all while maintaining strict 3.3V ±5% VDD/VDDQ compliance and industrial-grade thermal stability.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed pad not present. Pinout validated per PKG100 configuration for 256K × 36 variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256A-15JCIN, the 71V65603S100BGI uniquely delivers true zero bus turnaround and programmable burst order - critical for maximizing throughput in full-duplex packet buffers where read/write alternation is frequent and deterministic.

Availability

71V65603S100BGI is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, network processor co-processor memory, and industrial real-time controller cache requiring stable component supply across extended temperature ranges.

Supply support for 71V65603S100BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100BGI belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in telecom, networking, and real-time embedded systems demanding deterministic memory access.

FAQ

What is the memory organization and total capacity of the 71V65603S100BGI?

The 71V65603S100BGI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9 Megabits). This configuration provides a 36-bit wide data bus optimized for high-throughput parallel interfaces in networking and telecom applications, and is distinct from the 512K × 18 variant offered in the same family.

Does the 71V65603S100BGI support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S100BGI supports 4-word synchronous burst operations for both reads and writes. Burst order is selected via the static LBO pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances on each rising CLK edge when ADV/LD = HIGH.

What are the voltage and temperature specifications for the 71V65603S100BGI?

The 71V65603S100BGI requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. It is rated for industrial temperature operation from –40°C to +85°C, with data retention guaranteed in sleep mode (ZZ = HIGH) across this full range.

How does the ZBTTM feature eliminate dead cycles in the 71V65603S100BGI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100BGI removes idle bus cycles between alternating read and write operations by internally synchronizing output enable and using pipelined registers. This allows immediate transition from write-to-read or read-to-write without wait states, sustaining continuous 100% bus utilization in burst-intensive traffic buffers.

What package type and pin count does the 71V65603S100BGI use, and is it RoHS-compliant?

The 71V65603S100BGI uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body size and 0.5 mm lead pitch. Per Renesas documentation, the "BGI" suffix denotes industrial temperature grade and green (RoHS-compliant, halogen-free) packaging per J-STD-609.