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Renesas 71V65603S100BQ

Name: 71V65603S100BQ
Brand: Renesas
SKU: 71V65603S100BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65603S100BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V65603S100BQ.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

71V65603S100BQ from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz maximum clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling immediate read-after-write transitions without dead cycles. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards requiring deterministic burst pipelining.

For engineers reviewing the 71V65603S100BQ datasheet, 71V65603S100BQ pinout, 71V65603S100BQ application, or 71V65603S100BQ equivalent, key selection criteria include its TQFP-100 package, synchronous 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), and industrial temperature support (–40°C to +85°C).

Technical Context

The 71V65603S100BQ implements a fully pipelined synchronous interface with positive-edge-triggered address/control/data registers, internal burst counter, and dual-mode burst sequencing controlled by the static LBO pin. All inputs except OE and ZZ are synchronized to CLK's rising edge, with two-cycle latency between address/control assertion and data transfer.

Its ZBT™ architecture eliminates bus turnaround overhead via internally synchronized output buffer enable and single R/W control, while three chip enables (CE1, CE2, CE2) support depth expansion and two-cycle deselect with tri-state output hold. Power management includes asynchronous ZZ sleep mode and 3.3V ±5% core/I/O supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9.4 Mbit); supports high-bandwidth data paths in packet buffering applications.
Max Clock Frequency	150 MHz; enables 6.67 ns cycle time for sustained burst throughput in real-time systems.
Clock-to-Data Access	3.8 ns typical; guarantees deterministic timing for pipelined read operations after address load.
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves effective bandwidth by 4× per load.
Supply Voltage	VDD = VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic families and eliminates level-shifting requirements.
Operating Temperature	–40°C to +85°C (industrial grade); validated for deployment in base station and industrial control environments.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with automated assembly and thermal management.

Pinout & Package

71V65603S100BQ is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (counter-clockwise numbering). DNU pins (14, 16, 66) may be left unconnected, tied to VSS, or tied to VDD.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled.
CLK	Clock Input	Primary timing reference; all synchronous signals referenced to rising edge; OE and ZZ are asynchronous.
R/W	Read/Write Control	Single synchronous signal determining cycle type; data transfer occurs two clocks later.
ADV/LD	Advance Burst / Load Address	Controls burst counter increment (HIGH) or external address load (LOW); critical for burst sequence control.
LBO	Linear/Interleaved Burst Order	Static input selecting burst pattern; LBO = LOW → linear, HIGH → interleaved; must remain stable during operation.
BW1–BW4	Byte Write Enables	Four independent active-low enables for 9-bit bytes; allows partial-word writes without masking logic.
CE1, CE2, CE2	Chip Enables	Three synchronous enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion and two-cycle deselect.
OE	Output Enable	Asynchronous; drives I/Os to high-Z when HIGH; can be tied LOW for simplified read-only operation.
ZZ	Sleep Mode	Asynchronous; gates internal CLK and reduces power to minimum retention level; data retained.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered inputs/outputs ensure clean timing margins at 150 MHz.

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates dead cycles between consecutive reads/writes, enabling continuous 150 MHz burst streaming without inter-cycle gaps.
Internally Synchronized OE	Removes need for external OE timing control-output drivers auto-enable/disable based on internal pipeline state.
4-Word Pipelined Burst	Single address initiates four sequential data transfers; reduces address bus utilization and increases effective throughput by 4×.
Individual Byte Write Control	BW1–BW4 allow selective 9-bit byte updates within 36-bit word, avoiding full-word rewrite and reducing bus contention.
Three Chip Enables	Supports seamless depth expansion across multiple devices with precise two-cycle deselect and tri-state hold.
Asynchronous Sleep Mode (ZZ)	Reduces dynamic power to minimum while retaining memory contents-critical for low-power standby in telecom infrastructure.

Applications

Network Packet Buffering	Telecom Line Card Cache
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switches and routers. IC Role / Device Role / Timing Role: High-speed first-in-first-out (FIFO) buffer with deterministic 3.8 ns read latency and zero-turnaround burst writes. Use Value: Enables wire-speed packet processing at 10 Gbps+ by eliminating bus idle cycles between ingress/egress bursts.	Use Scenario: Caching frame headers and control metadata in SONET/SDH line interface units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory supporting real-time header inspection and modification. Use Value: Guarantees sub-4 ns access for time-critical header parsing, meeting strict jitter budgets in synchronous optical networks.
Baseband Processing Memory	Industrial PLC Data Logging
Use Scenario: Temporary storage of IQ samples and FFT coefficients in 4G/5G baseband processors. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to DSP DMA engines with pipelined 150 MHz transfers. Use Value: Matches DSP burst widths and clock rates without glue logic, reducing PCB area and signal integrity complexity.	Use Scenario: High-reliability cyclic data logging in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade buffer storing sensor history with guaranteed data retention during brownouts. Use Value: –40°C to +85°C operation and ZZ sleep mode ensure uninterrupted logging during voltage sags or thermal stress.

Network Packet Buffering

Telecom Line Card Cache

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switches and routers.

IC Role / Device Role / Timing Role: High-speed first-in-first-out (FIFO) buffer with deterministic 3.8 ns read latency and zero-turnaround burst writes.

Use Value: Enables wire-speed packet processing at 10 Gbps+ by eliminating bus idle cycles between ingress/egress bursts.

Use Scenario: Caching frame headers and control metadata in SONET/SDH line interface units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory supporting real-time header inspection and modification.

Use Value: Guarantees sub-4 ns access for time-critical header parsing, meeting strict jitter budgets in synchronous optical networks.

Baseband Processing Memory

Industrial PLC Data Logging

Use Scenario: Temporary storage of IQ samples and FFT coefficients in 4G/5G baseband processors.

IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly to DSP DMA engines with pipelined 150 MHz transfers.

Use Value: Matches DSP burst widths and clock rates without glue logic, reducing PCB area and signal integrity complexity.

Use Scenario: High-reliability cyclic data logging in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Industrial-grade buffer storing sensor history with guaranteed data retention during brownouts.

Use Value: –40°C to +85°C operation and ZZ sleep mode ensure uninterrupted logging during voltage sags or thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-133AXC	256K × 36-bit, 133 MHz max, 4.5 ns tCD; uses different burst control (MODE pin vs. LBO) and lacks ZZ sleep mode.	Lower speed margin and no deep-sleep capability limit use in high-throughput or power-constrained telecom designs.	Select when cost sensitivity outweighs need for 150 MHz performance or industrial sleep mode.
AS7C33256P-15JC	256K × 36-bit, 150 MHz, but asynchronous OE and no ZBT architecture; requires external OE timing control.	Cannot achieve true zero-turnaround operation-introduces 1–2 cycle gaps between read/write bursts.	Choose only if legacy system design mandates asynchronous OE control and burst gaps are acceptable.

Compared with CY7C1362BV33-133AXC and AS7C33256P-15JC, the 71V65603S100BQ delivers superior deterministic timing (3.8 ns tCD), integrated ZBT™ arbitration, and industrial-grade power management-making it optimal for next-generation packet-processing and real-time control systems where latency and reliability are non-negotiable.

Availability

71V65603S100BQ is available at Aetrix Electronics and suitable for network packet buffering, telecom line card cache, baseband processing memory, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V65603S100BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100BQ belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency buffering in communications equipment where deterministic burst pipelining and zero bus turnaround are essential.

FAQ

What memory configuration does the 71V65603S100BQ implement?

The 71V65603S100BQ implements a fixed 256K × 36-bit (9,437,184-bit) synchronous SRAM configuration. It is not configurable as 512K × 18-bit-the 71V65803 part number corresponds to that variant. This organization provides 36-bit-wide data paths ideal for parallel bus architectures in networking and DSP applications.

How does the ZBTTM feature improve system performance in the 71V65603S100BQ?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100BQ eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs requiring bus turnaround time, the 71V65603S100BQ allows immediate back-to-back access-enabling sustained 150 MHz burst throughput without inter-cycle gaps, which is critical for packet buffering in high-speed switches.

What is the function of the ADV/LD and LBO pins on the 71V65603S100BQ?

On the 71V65603S100BQ, ADV/LD controls whether the internal burst counter advances (HIGH) or loads a new external address (LOW), while LBO selects burst order: LOW = linear, HIGH = interleaved. Both are synchronous inputs sampled on CLK's rising edge, and LBO must remain static during burst operation to prevent sequence corruption.

Does the 71V65603S100BQ support industrial temperature operation?

Yes, the 71V65603S100BQ is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly confirmed in the datasheet's Recommended Operating Conditions table and Absolute Maximum Ratings section, making it suitable for deployment in base stations, factory automation, and outdoor telecom infrastructure.

What package type is used for the 71V65603S100BQ?

The 71V65603S100BQ uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body size and 0.5 mm lead pitch. This package is distinct from the BGA variants (BG119, BQ165) offered for the same family-only the TQFP version carries the "S100BQ" suffix.

71V65603S100BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V65603S100BQ FAQ

1.How can I place an order for 71V65603S100BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65603S100BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65603S100BQ reliable?

The price and inventory of 71V65603S100BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S100BQ is usually 5 days.

3.What payment methods are accepted for 71V65603S100BQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S100BQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V65603S100BQ?

71V65603S100BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65603S100BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65603S100BQ?

For technical support, including 71V65603S100BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S100BQ requirements.

6.How does Aetrix verify that 71V65603S100BQ is sourced from the original manufacturer or authorized distributors?

All 71V65603S100BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S100BQ meets industry standards.

7.What is the process for return or replacement of 71V65603S100BQ?

All 71V65603S100BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S100BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65603S100BQ part is unused and in its original packaging.

Return procedure for 71V65603S100BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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