Renesas 71V65603S100BQG8

Overview

71V65603S100BQG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking packet buffers and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65603S100BQG8 datasheet, 71V65603S100BQG8 pinout, 71V65603S100BQG8 application, or 71V65603S100BQG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ) decoupling requirements, and burst counter control via ADV/LD and LBO pins.

Technical Context

The 71V65603S100BQG8 implements a fully synchronous, clock-edge-triggered architecture with input/output registers on all address, control, and data lines. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus direction reversal after completion of the current cycle.

It integrates a 4-word burst counter with selectable linear or interleaved sequence (LBO pin), individual byte write enables (BW1–BW4), and three chip enables (CE1, CE2, CE2) for depth expansion. Clock Enable (CEN) suspends internal operation without affecting output state, while ZZ enables low-power sleep mode with guaranteed data retention.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner notch; top-side marking includes "71V65603S100BQG8".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33128PFS-15BIN, the 71V65603S100BQG8 uniquely combines ZBT™ timing, TQFP-100 packaging, and industrial temperature support - making it optimal for cost-sensitive, thermally demanding, and layout-constrained embedded designs requiring zero-turnaround performance.

Availability

71V65603S100BQG8 is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA co-processor memory, and telecom line card applications requiring stable component supply, long-term industrial-grade availability, and RoHS-compliant green packaging.

Supply support for 71V65603S100BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100BQG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking, telecommunications, and real-time embedded systems where deterministic bus turnaround is critical.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V65603S100BQG8?

The 71V65603S100BQG8 operates at up to 150 MHz with a typical clock-to-data access time (tCD) of 3.8 ns. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The 3.8 ns value defines the delay from CLK rising edge to valid data appearing on Q outputs during read cycles - a key parameter for timing-critical FPGA or ASIC interfaces.

How does the ZBTTM feature improve system-level performance compared to standard synchronous SRAMs?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100BQG8 eliminates mandatory idle cycles between consecutive read and write operations. Unlike conventional SRAMs that require bus stabilization time, the 71V65603S100BQG8 allows immediate direction reversal - enabling back-to-back reads and writes with no dead cycles. This increases effective bus bandwidth by up to 30% in burst-intensive applications like packet buffering.

What are the voltage requirements for VDD and VDDQ, and can they be supplied from the same regulator?

The 71V65603S100BQG8 requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. While both rails share the same nominal voltage, Renesas specifies separate decoupling and recommends independent regulation or tightly coupled low-noise LDOs. Sharing a single regulator risks I/O noise coupling into core logic, potentially violating setup/hold margins at 150 MHz operation.

Can the 71V65603S100BQG8 be used in linear burst mode, and how is it configured?

Yes, the 71V65603S100BQG8 supports linear burst mode when the LBO pin is held LOW (VSS). In this configuration, a 4-word burst accesses sequential addresses: A0, A0+1, A0+2, A0+3. The burst sequence is initiated by sampling ADV/LD = LOW to load the starting address, then ADV/LD = HIGH for subsequent increments. Linear mode is ideal for streaming applications like video frame buffering where memory access follows natural address order.

What is the function of the three chip enable pins (CE1, CE2, CE2), and how do they differ?

The 71V65603S100BQG8 features three chip enables: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted simultaneously (CE1 = L, CE2 = L, CE2 = H) to select the device. This asymmetric polarity allows flexible depth expansion - for example, using CE2 as a bank-select signal while CE1/CE2 serve as group enables - without external inverters or logic gates.