Renesas 71V65603S100BQGI
- Part No.:
- 71V65603S100BQGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V65603S100BQGI.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V65603S100BQGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 150 MHz clock speed (3.8 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers, packet switching ASIC interfaces, and FPGA co-processor memory subsystems.
For engineers reviewing the 71V65603S100BQGI datasheet, 71V65603S100BQGI pinout, 71V65603S100BQGI application, or 71V65603S100BQGI equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter control via ADV/LD and LBO, and industrial-grade thermal performance.
Technical Context
The 71V65603S100BQGI implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. Its ZBT feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access - enabled by dual-phase control logic and an on-chip burst counter.
It features three chip enables (CE1, CE2 active-low; CE2 active-high), individual byte write controls (BW1–BW4), asynchronous OE and ZZ inputs, and pipelined output registers that deliver data two clock cycles after address/control registration. The ADV/LD pin governs both external address loading and internal burst counter advancement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9,437,184 bits); supports high-bandwidth parallel data paths for 36-bit wide systems. |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for sustained burst transfers in real-time packet processing. |
| Clock-to-Data Access | 3.8 ns typical; guarantees deterministic read latency critical for synchronous pipeline alignment. |
| Burst Capability | 4-word linear or interleaved burst; reduces address overhead and improves throughput in sequential access patterns. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupled power domains prevent noise coupling between logic and data buses. |
| Operating Temperature | –40°C to +85°C; qualified for industrial embedded applications including telecom infrastructure and industrial controllers. |
| ZBT Architecture | Zero Bus Turnaround; allows immediate read-after-write or write-after-read without bus idle cycles, increasing effective bandwidth by up to 30%. |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked via corner notch or dot; top-side marking includes "71V65603S100BQGI" and date code.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 low-active, CE2 high-active); enable depth expansion and hierarchical memory decoding. |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines whether next data cycle is read or write. |
| ADV/LD | Advance Burst / Load Address | Controls burst counter increment (HIGH) or new address load (LOW); central to ZBT burst sequencing. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence pattern; must remain stable during burst operation. |
| BW1–BW4 | Byte Write Enables | Four active-low signals enabling 9-bit byte writes; support partial-word updates without read-modify-write overhead. |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs and outputs referenced to rising edge. |
| OE | Asynchronous Output Enable | Tri-states outputs independently of clock; simplifies bus sharing and eliminates need for precise OE timing. |
| ZZ | Asynchronous Sleep Mode | Gates internal clock and reduces power to retention level; preserves data while minimizing standby current. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Pins | 36-bit bidirectional synchronous data bus; registered inputs/outputs ensure clean setup/hold margins at 150 MHz. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates inter-access dead cycles, enabling back-to-back read/write operations and improving sustained bandwidth in burst-intensive workloads. |
| Pipelined Output Registers | Two-stage register pipeline ensures deterministic 3.8 ns clock-to-data timing and relaxes PCB trace length matching constraints. |
| On-Chip Burst Counter | Hardware counter driven by ADV/LD and LBO; removes external burst address generation logic and reduces controller complexity. |
| Individual Byte Write Control | Four independent BWx pins allow selective 9-bit writes, avoiding full-word overwrites and reducing memory traffic in cache-coherent systems. |
| Three Chip Enables | Supports seamless depth expansion across multiple devices without additional decode logic or address aliasing. |
| Industrial Temperature Range | Validated operation from –40°C to +85°C ensures reliability in base station RF modules, motor drives, and factory automation hardware. |
Applications
| High-Speed Network Packet Buffer | FPGA-Based Protocol Accelerator |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly to MAC-layer logic; provides zero-wait-state ZBT reads/writes synchronized to 150 MHz system clock. Use Value: Eliminates bus turnaround gaps between header parse (read) and payload rewrite (write), sustaining >95% bus utilization under 10 Gbps traffic loads. |
Use Scenario: Offloading TCP/IP checksum, encryption, or packet classification tasks from host CPU using FPGA-accelerated datapath. IC Role / Device Role / Timing Role: Shared memory resource between FPGA fabric and external processor; supports simultaneous burst reads (FPGA fetch) and writes (CPU update) via ZBT arbitration. Use Value: Enables concurrent access without external bus arbiter, reducing latency by 2–3 clock cycles per transaction and simplifying RTL integration. |
| Industrial PLC Motion Control Buffer | Telecom Baseband Signal Processing |
Use Scenario: Real-time buffering of multi-axis position commands and sensor feedback in CNC motion controllers. IC Role / Device Role / Timing Role: Deterministic latency SRAM used for cyclic servo loop data exchange; accessed via FPGA or microcontroller with strict jitter tolerance. Use Value: 3.8 ns clock-to-data access and industrial temp rating ensure sub-microsecond timing consistency across thermal cycling in factory environments. |
Use Scenario: Storing FFT coefficients, filter taps, and intermediate results in 4G/5G baseband processing units. IC Role / Device Role / Timing Role: High-throughput memory for DSP co-processors requiring 4-word burst reads aligned to symbol boundaries. Use Value: Linear/interleaved burst modes match OFDM symbol structure; 150 MHz clock supports 600 MB/s peak bandwidth needed for 100-MHz channel bandwidth processing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133AXC | 256K × 36-bit, 133 MHz max, 4.5 ns tCD; uses QDR-II interface with separate read/write clocks. | Requires dual-clock domain design and lacks ZBT burst sequencing; better suited for asymmetric read-heavy workloads. | Select when system already uses QDR-II infrastructure and prioritizes read bandwidth over write turnaround efficiency. |
| AS7C3256A-15JIN | 256K × 36-bit, 15 ns async access; no burst, no ZBT, no pipelining; TTL-compatible 5V/3.3V I/O. | Designed for legacy control-plane memory where timing determinism is secondary to simplicity and voltage flexibility. | Choose only for cost-sensitive, non-real-time applications where 150 MHz performance and ZBT are unnecessary. |
Compared with CY7C1362BV33-133AXC and AS7C3256A-15JIN, the 71V65603S100BQGI uniquely delivers zero-bus-turnaround operation at 150 MHz in a single-clock, fully pipelined architecture - making it optimal for tightly coupled, latency-critical burst-access systems where deterministic timing and minimal bus idle cycles are mandatory.
Availability
71V65603S100BQGI is available at Aetrix Electronics and suitable for high-speed network packet buffering, FPGA-based protocol acceleration, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for 71V65603S100BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V65603S100BQGI belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking equipment, base stations, and real-time embedded controllers demanding deterministic burst access and zero bus turnaround.
FAQ
What is the maximum operating frequency of the 71V65603S100BQGI?
The 71V65603S100BQGI is rated for a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, with 3.8 ns typical clock-to-data access time supporting tight timing closure in high-speed designs.
Does the 71V65603S100BQGI support both linear and interleaved burst modes?
Yes, the 71V65603S100BQGI supports both linear and interleaved 4-word burst sequences, selected by the static LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing (A0, A1, A2, A3) is used; when LBO = HIGH, interleaved order (A0, A2, A1, A3) is applied - enabling optimization for different memory access patterns in DSP or packet processing applications.
How does the ZBT™ feature improve system-level bandwidth in the 71V65603S100BQGI?
The ZBT™ (Zero Bus Turnaround) feature in the 71V65603S100BQGI eliminates mandatory idle cycles between consecutive read and write operations. By overlapping bus direction control with internal memory access, it enables immediate back-to-back transactions - increasing effective bus utilization by up to 30% compared to standard synchronous SRAMs in burst-intensive applications like packet switching.
What package type is used for the 71V65603S100BQGI?
The 71V65603S100BQGI is supplied in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm with 0.5 mm lead pitch. This package is RoHS-compliant, green-qualified, and optimized for reflow soldering in high-volume manufacturing environments.
Can the 71V65603S100BQGI operate in low-power mode?
Yes, the 71V65603S100BQGI supports low-power sleep mode via the asynchronous ZZ pin. When ZZ is driven HIGH, the internal clock is gated and device power drops to retention level while preserving stored data - ideal for power-constrained industrial or portable infrastructure applications requiring rapid wake-up capability.
71V65603S100BQGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V65603S100BQGI FAQ
1.How can I place an order for 71V65603S100BQGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S100BQGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S100BQGI reliable?
The price and inventory of 71V65603S100BQGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S100BQGI is usually 5 days.
3.What payment methods are accepted for 71V65603S100BQGI?
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4.How is shipping managed for 71V65603S100BQGI?
71V65603S100BQGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S100BQGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S100BQGI?
For technical support, including 71V65603S100BQGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S100BQGI requirements.
6.How does Aetrix verify that 71V65603S100BQGI is sourced from the original manufacturer or authorized distributors?
All 71V65603S100BQGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S100BQGI meets industry standards.
7.What is the process for return or replacement of 71V65603S100BQGI?
All 71V65603S100BQGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S100BQGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S100BQGI part is unused and in its original packaging.
Return procedure for 71V65603S100BQGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S100BQGI Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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