Renesas 71V65603S100BQGI8

Overview

71V65603S100BQGI8 from Renesas Electronics is a 256K × 36-bit (9 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It features three chip enables, individual byte write controls (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking packet buffers and telecom line-card data path memory.

For engineers reviewing the 71V65603S100BQGI8 datasheet, 71V65603S100BQGI8 pinout, 71V65603S100BQGI8 application, or 71V65603S100BQGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst mode configuration via LBO/ADV/LD, and industrial-grade thermal performance.

Technical Context

The 71V65603S100BQGI8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data are registered on the rising CLK edge. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus direction reversal after each access.

It integrates an on-chip burst counter, linear/interleaved burst sequencing controlled by static LBO, and internally synchronized output buffer enable-removing external OE timing constraints. The device supports depth expansion via CE1/CE2/CE2 and uses ADV/LD to load new addresses or increment the burst counter.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT71V65603 PKG100 drawing (Rev. 6.42).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33128P-15TIN, the 71V65603S100BQGI8 delivers higher bandwidth (150 MHz vs. 133/67 MHz), deterministic ZBT™ timing, and configurable burst ordering-making it optimal for latency-critical telecom and networking systems requiring minimal controller overhead.

Availability

71V65603S100BQGI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply and long-term industrial temperature support.

Supply support for 71V65603S100BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100BQGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for low-latency, high-throughput data buffering in networking equipment, base stations, and real-time control systems.

FAQ

What is the maximum operating frequency of the 71V65603S100BQGI8?

The 71V65603S100BQGI8 supports a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This is validated under industrial temperature conditions (–40°C to +85°C) and 3.3 V ±5% supply. The 3.8 ns clock-to-data access time ensures deterministic read latency critical for real-time packet processing applications using the 71V65603S100BQGI8.

Does the 71V65603S100BQGI8 support both linear and interleaved burst modes?

Yes, the 71V65603S100BQGI8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected. This dual-mode capability is confirmed in the functional timing diagrams and burst sequence tables of the official Renesas datasheet for the 71V65603S100BQGI8.

What package type is used for the 71V65603S100BQGI8?

The 71V65603S100BQGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14 mm × 20 mm body size and 0.5 mm lead pitch. This package is explicitly designated as PKG100 in Renesas documentation and matches the pinout shown in Figure 5 (Pin Configuration – 256K x 36, PKG100) of the 71V65603S100BQGI8 datasheet.

How does the ZBTTM feature improve system performance in the 71V65603S100BQGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100BQGI8 eliminates idle cycles when switching between read and write operations. Unlike conventional SRAMs requiring bus stabilization time, the 71V65603S100BQGI8 allows immediate direction reversal-enabling back-to-back accesses at full clock rate. This directly increases effective memory bandwidth in burst-intensive applications like network packet buffering using the 71V65603S100BQGI8.

What are the voltage requirements for VDD and VDDQ on the 71V65603S100BQGI8?

The 71V65603S100BQGI8 requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. These supplies must be independently decoupled per the layout guidelines in the Renesas datasheet. Deviation beyond ±5% violates the recommended operating conditions and may cause timing violations or data corruption in the 71V65603S100BQGI8.