Renesas 71V65603S100BQI

Overview

71V65603S100BQI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 150 MHz clock speed, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture. It supports pipelined burst reads/writes in linear or interleaved mode and operates across industrial temperature range (–40°C to +85°C), targeting high-speed packet buffering in network switches and telecom line cards.

For engineers reviewing the 71V65603S100BQI datasheet, 71V65603S100BQI pinout, 71V65603S100BQI application, or 71V65603S100BQI equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ) support, individual byte write control (BW1–BW4), and burst counter synchronization via ADV/LD and LBO inputs.

Technical Context

The 71V65603S100BQI implements a fully synchronous, pipelined interface where address/control registration occurs on the rising CLK edge, with data output valid two cycles later. Its ZBT architecture eliminates dead cycles between read/write transitions by internally managing bus direction without external OE control.

It integrates a 4-word burst counter synchronized to ADV/LD, with burst order selected statically by LBO (linear or interleaved). The device uses three chip enables (CE1, CE2, CE2) for depth expansion and supports asynchronous sleep mode via ZZ input and asynchronous output enable (OE).

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per Renesas document 5304 drw 02 (PKG100, 256K × 36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256B-15JC, the 71V65603S100BQI uniquely delivers ZBT timing with 150 MHz operation and integrated burst control-enabling higher sustained bandwidth in pipelined architectures without protocol translation or external logic.

Availability

71V65603S100BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-performance computing cache applications requiring stable component supply, long-term industrial temperature support, and verified ZBT timing compliance.

Supply support for 71V65603S100BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100BQI belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-throughput, low-latency data buffering in telecom, networking, and real-time embedded systems demanding deterministic bus turnaround behavior.

FAQ

What is the maximum operating frequency of the 71V65603S100BQI?

The 71V65603S100BQI supports a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This rating is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, enabling sustained burst throughput in time-critical applications like packet switching and real-time signal processing. The 71V65603S100BQI achieves this performance with a 3.8 ns clock-to-data access time.

Does the 71V65603S100BQI support both linear and interleaved burst modes?

Yes, the 71V65603S100BQI supports both linear and interleaved 4-word burst sequences, selected by the static LBO (Linear Burst Order) pin: LBO = LOW configures linear order (A0, A0+1, A0+2, A0+3), while LBO = HIGH selects interleaved order (A0, A0+2, A0+1, A0+3). This flexibility allows optimization for sequential streaming or cache-line-aligned access patterns. The 71V65603S100BQI implements the burst counter synchronously with ADV/LD and CLK, ensuring deterministic timing.

How does the ZBTTM feature eliminate dead cycles in the 71V65603S100BQI?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100BQI removes bus idle cycles between consecutive read and write operations by internally managing direction control-eliminating the need for external OE timing or bus turnaround delays. When transitioning from write to read (or vice versa), the 71V65603S100BQI asserts valid data or accepts input on the next clock edge without requiring a gap, enabling continuous 150 MHz throughput in pipelined systems.

What package type is used for the 71V65603S100BQI?

The 71V65603S100BQI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size with 0.5 mm lead pitch. This package is explicitly confirmed in Renesas documentation (5304 drw 02) for the 256K × 36 configuration. The "BQI" suffix in the part number denotes the TQFP-100 industrial-temperature variant, distinguishing it from BGA or fBGA versions.

Can the 71V65603S100BQI operate with independent core and I/O supplies?

Yes, the 71V65603S100BQI uses separate power domains: VDD (3.3 V ±5%) powers the core logic, while VDDQ (3.3 V ±5%) independently supplies the I/O buffers. This separation minimizes noise coupling between digital switching and data bus activity, improving signal integrity at 150 MHz. Both supplies must be within specification simultaneously for guaranteed operation, and the 71V65603S100BQI does not require specific power sequencing.