Renesas 71V65603S100PFG8

Overview

71V65603S100PFG8 from Renesas Electronics is a 256K × 36-bit (9-Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It supports interleaved or linear burst sequences via LBO control and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71V65603S100PFG8 datasheet, 71V65603S100PFG8 pinout, 71V65603S100PFG8 application, or 71V65603S100PFG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, and support for individual byte write (BW1–BW4) and burst counter functionality in fully pipelined systems.

Technical Context

The 71V65603S100PFG8 implements a synchronous dual-register architecture: address/control signals are latched on the rising edge of CLK with ADV/LD low, and data transfers occur two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by internally synchronizing output buffer enable-removing external OE timing constraints.

Burst operation is controlled by ADV/LD (load new address or increment internal counter) and LBO (linear vs. interleaved sequence), while three chip enables (CE1, CE2, CE2) support depth expansion. The device uses a high-performance CMOS process and features asynchronous ZZ sleep mode and OE, with all other inputs synchronous to CLK.

Key Specifications

Pinout & Package

71V65603S100PFG8 is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-140AC compliant, with 0.5 mm pitch and exposed thermal pad (PFG suffix). Pin functions are fully defined per Renesas IDT71V65603 datasheet Rev. 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33128PFS-15BIN, the 71V65603S100PFG8 uniquely delivers ZBT™ timing *plus* individual byte write control in a single industrial-grade TQFP package-enabling both maximum bus efficiency and fine-grained data update capability without design compromises.

Availability

71V65603S100PFG8 is available at Aetrix Electronics and suitable for high-speed networking packet buffers, telecom line-card memory subsystems, and industrial PLC data logging requiring stable component supply and long-term industrial temperature support.

Supply support for 71V65603S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100PFG8 belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in telecom infrastructure, network processors, and real-time control systems.

FAQ

What is the maximum operating frequency of the 71V65603S100PFG8?

The 71V65603S100PFG8 supports a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This rating is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, as specified in the Renesas IDT71V65603 datasheet Rev. 6.42. At this speed, the device achieves a 3.8 ns clock-to-data access time for read operations.

Does the 71V65603S100PFG8 support burst read and write operations?

Yes, the 71V65603S100PFG8 supports 4-word burst operations for both reads and writes. Burst sequencing is controlled by the ADV/LD pin (to load address or advance counter) and the LBO pin (to select linear or interleaved order). Burst cycles execute with zero bus turnaround-no dead cycles occur between successive bursts or between read/write transitions-making it ideal for high-throughput streaming applications.

What package type is used for the 71V65603S100PFG8?

The 71V65603S100PFG8 uses a 100-pin plastic thin quad flatpack (TQFP) package, JEDEC MO-140AC compliant, with dimensions of 14 mm × 20 mm and 0.5 mm lead pitch. The "PFG" suffix explicitly denotes this TQFP variant, and the device includes an exposed thermal pad for enhanced heat dissipation in high-frequency operation.

How does the ZBTTM feature improve system performance in the 71V65603S100PFG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100PFG8 eliminates dead cycles between consecutive read and write operations. Unlike conventional SRAMs that require bus idle time to change direction, the 71V65603S100PFG8 allows immediate transition-e.g., a write cycle can be followed directly by a read cycle on the next clock edge. This increases effective memory bandwidth by up to 25% in mixed-access workloads common in packet processing and real-time control.

Can the 71V65603S100PFG8 operate in low-power mode, and how is it controlled?

Yes, the 71V65603S100PFG8 supports low-power sleep mode via the asynchronous ZZ input. When ZZ is driven HIGH, the internal clock is gated and the device enters its lowest power-consumption state while maintaining full data retention. Power resumes automatically upon ZZ returning LOW, with no reset or initialization sequence required-enabling rapid wake-up in energy-sensitive applications like remote base stations or portable medical devices.