My Inquiry
My Account
Renesas 71V65603S100PFGI
- Part No.:
- 71V65603S100PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V65603S100PFGI.pdf
- Description:
- IC SRAM 9MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,668
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V65603S100PFGI from Renesas Electronics is a 3.3V, 9,437,184-bit (256K × 36) synchronous ZBT™ SRAM with zero bus turnaround, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It supports industrial temperature range (–40°C to +85°C) and is packaged in a 100-pin TQFP for high-speed memory buffering in network switches and telecom line cards.
For engineers reviewing the 71V65603S100PFGI datasheet, 71V65603S100PFGI pinout, 71V65603S100PFGI application, or 71V65603S100PFGI equivalent, key selection criteria include ZBT™ bus efficiency, synchronous burst control via ADV/LD and LBO, individual byte write (BW1–BW4), and JEDEC-standard 100-pin TQFP compatibility with 3.3V I/O and core supply.
Technical Context
The 71V65603S100PFGI implements a fully synchronous, pipelined architecture where address/control registration occurs on the rising CLK edge, and data transfer completes two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus direction reversal without OE control.
It integrates an on-chip burst counter with linear or interleaved sequencing selected by static LBO input, and supports depth expansion via three chip enables (CE1, CE2, CE2) with two-cycle deselect timing. Clock Enable (CEN) suspends all synchronous operation while preserving register state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 (9,437,184 bits); supports high-bandwidth parallel data paths in packet buffering applications |
| Max Clock Frequency | 150 MHz; enables 6.67 ns cycle time for real-time switching fabric memory access |
| Access Time | 3.8 ns clock-to-data; guarantees deterministic latency for pipelined read cycles |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; dual-rail I/O/core separation reduces noise coupling |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded networking equipment |
| Burst Mode | 4-word linear/interleaved burst; reduces address bus overhead in sequential memory accesses |
| Power-Down Control | Asynchronous ZZ input gates internal clock and reduces active power during idle periods |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm footprint, lead-free and RoHS-compliant (PFGI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock Input | Rising-edge-triggered master timing reference for all synchronous registers |
| A0–A17 | Address Inputs | 18-bit address bus supporting 256K depth; registered on CLK rise with ADV/LD low |
| R/W | Read/Write Control | Synchronous signal defining load-cycle operation type; determines data direction two cycles later |
| ADV/LD | Burst Address Control | Loads new external address (low) or advances internal burst counter (high); enables burst chaining |
| LBO | Burst Order Select | Static input selecting linear (LBO = low) or interleaved (LBO = high) 4-word burst sequence |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; allows partial-word writes without read-modify-write |
| CE1, CE2, CE2 | Chip Enables | Three enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and hierarchical decoding |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus with registered inputs/outputs; supports full-word or byte-aligned transfers |
| ZZ | Sleep Mode Input | Asynchronous entry to low-power sleep mode; retains data while gating internal clock |
| OE | Output Enable | Asynchronous control; tri-states outputs when high-optional in ZBT™ mode due to pipelined output enable |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between consecutive reads/writes, enabling continuous bus utilization in burst-intensive systems |
| Pipelined Output Buffer | Internally synchronized OE replacement-removes need for external OE timing control and simplifies system-level timing closure |
| 4-Word Burst Counter | Reduces address bus activity by 75% for sequential accesses; selectable linear/interleaved order via LBO pin |
| Individual Byte Write | Enables precise 9-bit sub-word updates without disturbing adjacent bytes-critical for header modification in packet processors |
| Three Chip Enables | Supports seamless depth expansion across multiple devices using standard logic decoding, minimizing glue logic |
Applications
| Network Switch Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding Ethernet frames in Layer 2/3 switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency packet buffer providing 256K × 36-bit storage with deterministic 3.8 ns read access and zero-turnaround burst writes. Use Value: Enables full-line-rate forwarding at 10 Gbps+ by eliminating bus idle cycles during back-to-back packet writes and reads. | Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring reliable, temperature-hardened memory. IC Role / Device Role / Timing Role: Industrial-temperature SRAM serving as shared memory between framer and processor subsystems with burst-aligned data transfers. Use Value: Guarantees data integrity from –40°C to +85°C while supporting 4-word bursts to match ATM cell or STS-1 payload alignment. |
| Baseband Processor Cache | Radar Signal Processing FIFO |
Use Scenario: Instruction/data cache for DSP-based wireless baseband controllers in 4G/LTE infrastructure. IC Role / Device Role / Timing Role: Low-jitter, pipelined SRAM interfacing directly to DSP EMIF with CEN-controlled clock gating during idle intervals. Use Value: Reduces average power via ZZ sleep mode and CEN suspension while maintaining 150 MHz throughput for bursty instruction fetch patterns. | Use Scenario: Real-time radar pulse sampling buffer requiring glitch-free, deterministic read/write handshaking. IC Role / Device Role / Timing Role: Synchronous FIFO element with ADV/LD-controlled burst loading and R/W-synchronized data staging. Use Value: Ensures no data loss during high-speed ADC sampling bursts by guaranteeing fixed 2-cycle pipeline latency and zero bus turnaround on ping-pong buffer swaps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133AXC | 256K × 36, 133 MHz max, 4.5 ns tCD, 100-pin TQFP, Cypress (now Infineon) | Lower speed grade; lacks ZBT™ architecture-requires explicit OE control and exhibits bus turnaround penalty | Select when cost sensitivity outweighs ZBT™ efficiency needs and system timing budget accommodates 0.7 ns longer access and turnaround overhead |
| AS7C33256PFSIG | 256K × 36, 150 MHz, 3.8 ns tCD, 100-pin TQFP, Alliance Memory | Pin-compatible ZBT™ SRAM with identical timing and pinout; no LBO pin-fixed linear burst only | Drop-in replacement if linear burst suffices and LBO functionality is unused; verify industrial temp qualification per batch |
Compared with CY7C1362BV33-133AXC and AS7C33256PFSIG, the 71V65603S100PFGI uniquely delivers ZBT™-enabled zero-turnaround operation with configurable burst ordering (LBO), making it optimal for latency-critical telecom and networking buffers where bus efficiency directly impacts throughput.
Availability
71V65603S100PFGI is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, baseband processor cache, and radar signal processing FIFO applications requiring stable component supply and industrial-temperature reliability.
Supply support for 71V65603S100PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65603S100PFGI belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency memory interfacing in high-speed packet processing, switching, and real-time signal buffering systems.
FAQ
What is the memory organization and total capacity of the 71V65603S100PFGI?
The 71V65603S100PFGI is organized as 256K × 36, delivering a total capacity of 9,437,184 bits (9 Megabits). This configuration provides a 36-bit-wide data bus optimized for high-throughput applications such as packet buffering and telecom frame storage, and is distinct from the 512K × 18 variant in the same family.
Does the 71V65603S100PFGI support burst mode, and how is burst order controlled?
Yes, the 71V65603S100PFGI supports 4-word burst mode with selectable linear or interleaved sequencing. Burst order is controlled by the static LBO (Linear Burst Order) input: LBO = low selects linear order, and LBO = high selects interleaved order. The burst counter advances automatically on each CLK rise when ADV/LD is high.
What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S100PFGI?
The 71V65603S100PFGI features three chip enables: CE1 and CE2 are active-low, while CE2 is active-high. All three must be asserted (CE1 = L, CE2 = L, CE2 = H) to select the device. This arrangement enables flexible depth expansion and hierarchical memory decoding without additional logic gates.
How does the ZBTTM feature eliminate dead cycles in the 71V65603S100PFGI?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S100PFGI allows immediate transition between read and write operations without bus idle cycles. It achieves this through internally synchronized output buffering and elimination of external OE control, enabling back-to-back burst transfers with no turnaround penalty.
What package type and environmental rating does the 71V65603S100PFGI use?
The 71V65603S100PFGI uses a 100-pin plastic thin quad flatpack (TQFP) package (PKG100), JEDEC-standard 14 mm × 20 mm footprint. It is rated for industrial temperature operation (–40°C to +85°C) and carries the "PFGI" suffix indicating lead-free, RoHS-compliant construction.
71V65603S100PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
71V65603S100PFGI FAQ
1.How can I place an order for 71V65603S100PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S100PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S100PFGI reliable?
The price and inventory of 71V65603S100PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S100PFGI is usually 5 days.
3.What payment methods are accepted for 71V65603S100PFGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S100PFGI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V65603S100PFGI?
71V65603S100PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S100PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S100PFGI?
For technical support, including 71V65603S100PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S100PFGI requirements.
6.How does Aetrix verify that 71V65603S100PFGI is sourced from the original manufacturer or authorized distributors?
All 71V65603S100PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S100PFGI meets industry standards.
7.What is the process for return or replacement of 71V65603S100PFGI?
All 71V65603S100PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S100PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S100PFGI part is unused and in its original packaging.
Return procedure for 71V65603S100PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S100PFGI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
