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Renesas 71V65603S100PFGI8

Name: 71V65603S100PFGI8
Brand: Renesas
SKU: 71V65603S100PFGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V65603S100PFGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V65603S100PFGI8.pdf

Description:: IC SRAM 9MBIT PAR 100TQFP

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Product details

Overview

71V65603S100PFGI8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), 150 MHz operation (3.8 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs - deployed in high-speed networking line cards, packet buffer subsystems, and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65603S100PFGI8 datasheet, 71V65603S100PFGI8 pinout, 71V65603S100PFGI8 application, or 71V65603S100PFGI8 equivalent, this page delivers verified timing behavior, burst mode control logic, industrial-grade thermal specs (–40°C to +85°C), JEDEC-standard TQFP-100 packaging, and byte-write enable mapping for deterministic system-level integration.

Technical Context

The 71V65603S100PFGI8 implements a fully synchronous, two-cycle latency pipeline: address/control registration on rising CLK edge, data transfer two cycles later. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-synchronized address loading.

It supports 4-word linear or interleaved bursts (selected by static LBO pin), individual byte write control (BW1–BW4), three chip enables (CE1/CE2/CE2) for depth expansion, and asynchronous sleep mode (ZZ) with guaranteed data retention - all operating under 3.3V ±5% core (VDD) and I/O (VDDQ) supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9.4 Mbit); fixed configuration for this variant - no 512K×18 mode supported
Max Clock Frequency	150 MHz; enables 6.67 ns cycle time for sustained burst throughput in pipelined systems
Clock-to-Data Access	3.8 ns typical; defines minimum latency from CLK edge to valid output data at I/O pins
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency
Operating Temperature	–40°C to +85°C industrial grade; validated for extended thermal cycling in telecom infrastructure
Supply Voltage	VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; separate core/I/O rails allow optimized power domain partitioning
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with standard reflow profiles

Pinout & Package

71V65603S100PFGI8 is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-140AC compliant, with 0.5 mm pitch and 14 mm × 20 mm body size. Pin 1 marked by corner notch; top-side marking includes "71V65603S100PFGI8" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Input	18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled
CLK	Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; OE is sole asynchronous signal
R/W	Read/Write Control	Synchronous command; determines load-cycle operation type (read = HIGH, write = LOW)
ADV/LD	Address Load / Burst Advance	LOW loads external address; HIGH increments internal burst counter - critical for burst sequencing
LBO	Burst Order Select	Static input: LOW = linear burst (0,1,2,3), HIGH = interleaved (0,2,1,3); must remain stable during operation
BW1–BW4	Byte Write Enables	Active-low synchronous controls for 9-bit bytes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4)
CE1, CE2, CE2	Chip Enable Inputs	Three-input enable logic: CE1=LOW, CE2=LOW, CE2=HIGH required for selection; enables depth expansion
OE	Output Enable	Asynchronous active-low; tri-states outputs when HIGH - may be tied LOW for simplified read-only use
ZZ	Sleep Mode Input	Asynchronous HIGH gates internal clock and reduces power; retains data without external refresh
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered input/output paths ensure timing predictability

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates idle cycles between consecutive reads/writes - enables continuous 150 MHz bus utilization without turnaround penalty
Pipelined Output Buffer	Internally synchronized OE elimination - removes need for external OE timing control in high-speed designs
4-Word Burst Counter	Reduces address bus activity by 75% per burst; LBO-selectable linear/interleaved order matches processor cache line patterns
Individual Byte Write	Granular 9-bit write control (BW1–BW4) allows partial-word updates without read-modify-write overhead
Three-Chip-Enable Architecture	Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic - no external decode logic needed

Applications

Network Packet Buffer	FPGA Co-Processor Cache
Use Scenario: High-throughput Ethernet switch ASIC requiring low-latency, burst-capable memory for ingress/egress packet buffering. IC Role / Device Role / Timing Role: Primary 9.4 Mbit packet buffer with ZBT™ zero-turnaround operation enabling back-to-back read/write at line rate. Use Value: 3.8 ns clock-to-data access and 150 MHz sustained burst throughput eliminate pipeline stalls in 10G+ switching fabric.	Use Scenario: Off-chip cache for Xilinx Kintex or Intel Stratix FPGA-based real-time signal processing engine. IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to FPGA's high-speed parallel I/O banks with pipelined register-to-register timing. Use Value: Fully registered address/data/control paths and deterministic 2-cycle latency simplify FPGA timing closure and reduce static timing analysis margin.
Telecom Line Card Memory	Industrial Motion Controller Buffer
Use Scenario: Memory subsystem in carrier-grade optical transport equipment (OTN/SDH) requiring industrial temperature reliability. IC Role / Device Role / Timing Role: Dual-port-equivalent buffer supporting simultaneous packet header lookup (read) and payload write operations. Use Value: –40°C to +85°C rating and ZZ sleep mode support unattended operation in outdoor cabinet environments with thermal cycling.	Use Scenario: Real-time motion profile buffer in CNC controller requiring deterministic access to trajectory data. IC Role / Device Role / Timing Role: Deterministic-access memory mapped into microcontroller's external bus interface for jitter-free position update streaming. Use Value: Synchronous 2-cycle latency and burst capability enable precise 1 µs servo loop timing without software wait-state insertion.

Network Packet Buffer

FPGA Co-Processor Cache

Use Scenario: High-throughput Ethernet switch ASIC requiring low-latency, burst-capable memory for ingress/egress packet buffering.

IC Role / Device Role / Timing Role: Primary 9.4 Mbit packet buffer with ZBT™ zero-turnaround operation enabling back-to-back read/write at line rate.

Use Value: 3.8 ns clock-to-data access and 150 MHz sustained burst throughput eliminate pipeline stalls in 10G+ switching fabric.

Use Scenario: Off-chip cache for Xilinx Kintex or Intel Stratix FPGA-based real-time signal processing engine.

IC Role / Device Role / Timing Role: Synchronous SRAM interfaced directly to FPGA's high-speed parallel I/O banks with pipelined register-to-register timing.

Use Value: Fully registered address/data/control paths and deterministic 2-cycle latency simplify FPGA timing closure and reduce static timing analysis margin.

Telecom Line Card Memory

Industrial Motion Controller Buffer

Use Scenario: Memory subsystem in carrier-grade optical transport equipment (OTN/SDH) requiring industrial temperature reliability.

IC Role / Device Role / Timing Role: Dual-port-equivalent buffer supporting simultaneous packet header lookup (read) and payload write operations.

Use Value: –40°C to +85°C rating and ZZ sleep mode support unattended operation in outdoor cabinet environments with thermal cycling.

Use Scenario: Real-time motion profile buffer in CNC controller requiring deterministic access to trajectory data.

IC Role / Device Role / Timing Role: Deterministic-access memory mapped into microcontroller's external bus interface for jitter-free position update streaming.

Use Value: Synchronous 2-cycle latency and burst capability enable precise 1 µs servo loop timing without software wait-state insertion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-133AXC	256K × 36-bit, 133 MHz max, 4.5 ns tCD; uses different burst control (MODE pin vs. LBO); no ZZ sleep mode	Lower speed grade; lacks industrial temp option and sleep mode - suitable only for commercial ambient environments	Select when 133 MHz suffices and sleep mode is unnecessary; verify burst sequence compatibility with existing ADV/LD logic
AS7C33256PFS-15BIN	256K × 36-bit, 150 MHz, 3.8 ns tCD; identical ZBT™ architecture but single CE pin and no BWx granularity	Reduced control flexibility: no individual byte write or 3-CE depth expansion - requires external logic for multi-device stacks	Choose for cost-sensitive designs where byte-level write control and multi-chip enable are not required

Compared with CY7C1362BV33-133AXC and AS7C33256PFS-15BIN, the 71V65603S100PFGI8 uniquely combines industrial temperature support, ZZ sleep mode, full 3-CE expandability, and granular BW1–BW4 control - making it the only option for thermally demanding, power-aware, and scalable high-speed buffer designs.

Availability

71V65603S100PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom line card memory applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.

Supply support for 71V65603S100PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S100PFGI8 belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for zero-turnaround, burst-capable memory subsystems in telecom, networking, and real-time embedded systems.

FAQ

What is the memory organization of the 71V65603S100PFGI8?

The 71V65603S100PFGI8 is configured exclusively as 256K × 36-bit (9,437,184 bits). Although the family includes 512K × 18 variants (e.g., 71V65803), the 71V65603S100PFGI8 die implements only the 256K × 36 organization - confirmed by pinout (A0–A17), data bus width (I/O0–I/O31 + I/OP1–I/OP4), and functional block diagrams.

Does the 71V65603S100PFGI8 support both linear and interleaved burst modes?

Yes, the 71V65603S100PFGI8 supports both burst orders via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence (0,1,2,3), while LBO = HIGH selects interleaved (0,2,1,3). This static input must remain stable during burst operation and is validated in the Interleaved and Linear Burst Sequence Tables.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S100PFGI8?

The 71V65603S100PFGI8 uses CE1 (active-low), CE2 (active-low), and CE2 (active-high) in combination: device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. This three-pin scheme enables flexible depth expansion without external decoding logic - for example, stacking multiple devices with shared CE1/CE2 and individual CE2 lines.

Can the 71V65603S100PFGI8 operate in low-power sleep mode?

Yes, the 71V65603S100PFGI8 supports asynchronous sleep mode via the ZZ pin: asserting ZZ = HIGH internally gates the clock and reduces power consumption to its minimum level while guaranteeing data retention. This is distinct from standby or power-down modes requiring clock suspension via CEN.

Is the 71V65603S100PFGI8 pin-compatible with other members of the 71V65603/71V65803 family?

No - the 71V65603S100PFGI8 is not pin-compatible with 71V65803 or other variants. While sharing the same 100-pin TQFP package footprint, pin functions differ significantly: 71V65603S100PFGI8 uses A0–A17 and 36-bit I/O, whereas 71V65803 uses A0–A18 and 18-bit I/O with different I/O pin assignments (e.g., NC vs. I/O locations). Pin Configuration diagrams confirm non-interchangeable layouts.

71V65603S100PFGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x20)

71V65603S100PFGI8 FAQ

1.How can I place an order for 71V65603S100PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V65603S100PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V65603S100PFGI8 reliable?

The price and inventory of 71V65603S100PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S100PFGI8 is usually 5 days.

3.What payment methods are accepted for 71V65603S100PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S100PFGI8 transactions.

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4.How is shipping managed for 71V65603S100PFGI8?

71V65603S100PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V65603S100PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V65603S100PFGI8?

For technical support, including 71V65603S100PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S100PFGI8 requirements.

6.How does Aetrix verify that 71V65603S100PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V65603S100PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S100PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V65603S100PFGI8?

All 71V65603S100PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S100PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V65603S100PFGI8 part is unused and in its original packaging.

Return procedure for 71V65603S100PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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