Renesas 71V65603S133BG

Overview

71V65603S133BG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling dead-cycle-free read/write transitions. It operates across industrial temperature range (–40°C to +85°C) and supports burst reads/writes in linear or interleaved order for high-throughput memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the 71V65603S133BG datasheet, 71V65603S133BG pinout, 71V65603S133BG application, or 71V65603S133BG equivalent, key selection criteria include its pipelined output registers, four-word burst capability, individual byte write enables (BW1–BW4), synchronous chip enable logic (CE1/CE2/CE2), and support for JEDEC-standard 100-pin TQFP packaging with 3.3V I/O and core supply.

Technical Context

The 71V65603S133BG implements a fully synchronous, positive-edge-triggered interface with address/control/data registered on CLK rising edge. Its ZBT architecture eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without idle cycles - critical for high-speed packet forwarding engines and real-time DSP buffers.

It integrates an on-chip burst counter controlled by ADV/LD and LBO inputs, supporting both linear and interleaved 4-word burst sequences. Output enable (OE) remains asynchronous for flexible timing control, while ZZ input enables low-power sleep mode with guaranteed data retention - all synchronized to a single 3.3V VDD/VDDQ supply system.

Key Specifications

Pinout & Package

71V65603S133BG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm, with 0.5 mm lead pitch and exposed thermal pad (per PKG100 mechanical drawing). Pin functions are fully validated per Renesas IDT71V65603 datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BAXI and AS7C3256A-133JCIN, the 71V65603S133BG uniquely delivers zero bus turnaround, integrated burst counter, and fully registered I/O - reducing system-level timing complexity and logic overhead in high-speed packet and DSP memory interfaces.

Availability

71V65603S133BG is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, and industrial PLC memory modules requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for 71V65603S133BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BG belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in networking, telecommunications, and real-time embedded systems demanding deterministic burst performance.

FAQ

What is the memory organization and total capacity of the 71V65603S133BG?

The 71V65603S133BG is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit wide data paths ideal for 32-bit systems with parity or ECC overhead, and enables efficient depth expansion using its three chip enable pins (CE1, CE2, CE2) without external decoding logic.

Does the 71V65603S133BG support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S133BG supports 4-word burst reads and writes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW selects linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The internal burst counter is advanced by sampling ADV/LD = HIGH on the rising CLK edge, eliminating need for external burst sequencers.

What is the function of the ZZ pin on the 71V65603S133BG, and does it retain data during sleep mode?

ZZ is the asynchronous sleep mode input on the 71V65603S133BG. When asserted HIGH, it internally gates the CLK and reduces ICC to less than 100 µA. Crucially, data retention is guaranteed during sleep mode - the SRAM maintains all stored contents without refresh, making it suitable for low-power standby in industrial and telecom applications.

How does the ZBTTM feature improve system performance in the 71V65603S133BG?

ZBTTM (Zero Bus Turnaround) eliminates idle cycles between consecutive read and write operations - for example, a write followed immediately by a read requires no bus turnaround delay. In the 71V65603S133BG, this enables 100% bus utilization during mixed-access workloads, reducing average memory latency by up to 30% compared to conventional SSRAMs and simplifying controller design for packet-forwarding engines.

What package type and pin count does the 71V65603S133BG use, and is it RoHS-compliant?

The 71V65603S133BG uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) package (PKG100), measuring 14 mm × 20 mm with 0.5 mm lead pitch. Per Renesas documentation, this variant is RoHS-compliant and qualifies as a green part - meeting lead-free soldering requirements and environmental regulations for industrial and telecom deployments.