Renesas 71V65603S133BG8

Overview

71V65603S133BG8 from Renesas Electronics is a 3.3V, 9-Mbit synchronous ZBT™ SRAM with 256K × 36 organization, 133 MHz maximum clock frequency (7.5 ns clock-to-data access), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers, packet switching ASIC interfaces, and FPGA co-processor memory subsystems.

For engineers reviewing the 71V65603S133BG8 datasheet, 71V65603S133BG8 pinout, 71V65603S133BG8 application, or 71V65603S133BG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter control via ADV/LD and LBO, and support for individual byte write (BW1–BW4) in 36-bit data path systems.

Technical Context

The 71V65603S133BG8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data are registered on the rising edge of CLK. All operations-including load, burst, deselect, and suspend-are synchronized to CLK, with output data valid two cycles after address/control registration.

ZBT™ operation eliminates dead cycles between read/write transitions by enabling immediate bus turnaround via internal burst counter advancement (ADV/LD = HIGH) and deterministic pipelined output staging. The device integrates separate VDD (core) and VDDQ (I/O) supplies, asynchronous ZZ sleep mode, and static LBO pin selection for linear or interleaved burst order-no dynamic reconfiguration required during operation.

Key Specifications

Pinout & Package

71V65603S133BG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 is located at bottom-left corner when notch is oriented upward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V65603S133BG8 uniquely delivers ZBT™-enabled bus efficiency and integrated burst counter control in a standard synchronous SRAM interface-enabling direct replacement of legacy async SRAMs while preserving existing controller logic.

Availability

71V65603S133BG8 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based accelerators, and industrial real-time controllers requiring stable component supply, long-term lifecycle assurance, and industrial-temperature performance.

Supply support for 71V65603S133BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking, telecom, and real-time embedded systems where deterministic timing and bus efficiency are critical.

FAQ

What is the memory organization and total capacity of the 71V65603S133BG8?

The 71V65603S133BG8 is configured as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9 Megabits). This organization is fixed for this specific part number and differs from the 512K × 18 variant (71V65803). The 36-bit data bus supports byte-level writes via BW1–BW4 signals, making it suitable for applications requiring flexible word-length handling without external data masking.

Does the 71V65603S133BG8 support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S133BG8 supports 4-word burst reads and writes. Burst order is selected statically via the LBO pin: LOW configures linear burst (A0, A1, A2, A3), HIGH selects interleaved burst (A0, A2, A1, A3). The burst counter advances automatically on each CLK edge when ADV/LD is HIGH, eliminating need for external address generation logic during burst sequences.

What are the power supply requirements for the 71V65603S133BG8, and how is sleep mode activated?

The 71V65603S133BG8 requires two independent 3.3V supplies: VDD (core, 3.3V ±5%) and VDDQ (I/O, 3.3V ±5%). Sleep mode is activated asynchronously by driving the ZZ pin HIGH, which gates the internal clock and reduces power consumption to retention level while preserving data. No clock or other signals need to be held during sleep entry or exit.

How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the 71V65603S133BG8?

ZBTTM eliminates mandatory idle cycles between alternating read and write operations. In conventional SRAMs, bus direction change requires wait states; the 71V65603S133BG8 allows immediate transition-for example, a write burst can be followed directly by a read burst on the next clock cycle. This increases effective bus utilization by up to 30% in mixed-access workloads common in packet processing and DSP buffering.

Is the 71V65603S133BG8 pin-compatible with other members of the 71V65603/71V65803 family, such as the 71V65803S133BG8?

No, the 71V65603S133BG8 (256K × 36) and 71V65803S133BG8 (512K × 18) are not pin-compatible. Although both use the same 100-pin TQFP package, their address pin counts differ (A0–A17 vs. A0–A18), and data I/O pin assignments vary significantly-e.g., 71V65603 uses I/O0–I/O31 + I/OP1–I/OP4, while 71V65803 uses I/O0–I/O15 + I/OP1–I/OP2. PCB layout must be designed specifically for each variant.