Renesas 71V65603S133BGG

Overview

71V65603S133BGG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9.44 Mbit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports interleaved/linear 4-word burst reads/writes and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC interfaces.

For engineers reviewing the 71V65603S133BGG datasheet, 71V65603S133BGG pinout, 71V65603S133BGG application, or 71V65603S133BGG equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O voltage tolerance, and support for individual byte write control (BW1–BW4) in burst-mode memory subsystems.

Technical Context

The 71V65603S133BGG implements a fully synchronous, clock-edge-triggered interface with address/control/data registers aligned to the rising edge of CLK. Its ZBT™ architecture eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.

It features three chip enables (CE1, CE2 active-low; CE2 active-high), asynchronous OE and ZZ inputs, and static LBO pin selecting linear or interleaved burst order. Output enable is internally synchronized, removing external timing constraints on OE control.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch. Pin 1 marked by corner notch or dot; top-side marking includes "71V65603S133BGG" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C33256P-133JCIN, the 71V65603S133BGG delivers deterministic zero-cycle turnaround and integrated burst sequencing - reducing controller logic, improving throughput in packet-forwarding and DSP buffering roles where back-to-back memory transactions dominate.

Availability

71V65603S133BGG is available at Aetrix Electronics and suitable for high-speed network buffers, telecom line cards, and radar signal processing systems requiring stable component supply, long-term industrial temperature support, and verified ZBT™ timing compliance.

Supply support for 71V65603S133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BGG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking, telecommunications, and real-time signal processing systems demanding deterministic burst and turnaround performance.

FAQ

What is the maximum operating frequency and corresponding cycle time for the 71V65603S133BGG?

The 71V65603S133BGG is rated for a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock cycle time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves this performance using a high-speed CMOS process and fully registered synchronous interface with pipelined outputs.

Does the 71V65603S133BGG support true zero bus turnaround (ZBT™) between read and write operations?

Yes, the 71V65603S133BGG implements Renesas' proprietary ZBTTM architecture, which guarantees zero dead cycles between consecutive read and write operations. This is achieved through internal synchronization of the output buffer enable and burst counter logic, allowing immediate bus direction reversal without wait states - a key requirement for high-efficiency packet buffering in networking ASICs.

What package type and pin count does the 71V65603S133BGG use, and is it RoHS-compliant?

The 71V65603S133BGG is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC standard outline, 14 mm × 20 mm body size. It is a green (RoHS-compliant, lead-free) part, as confirmed in the official Renesas ordering information and environmental compliance documentation. The "BGG" suffix explicitly denotes the RoHS-compliant TQFP variant.

How does the burst addressing function work on the 71V65603S133BGG, and what controls burst order?

The 71V65603S133BGG uses the ADV/LD pin to control burst operation: LOW loads a new external address, HIGH advances the internal 4-word burst counter. Burst order (linear vs. interleaved) is selected by the static LBO pin - LOW selects linear, HIGH selects interleaved. This allows flexible cache-line alignment without external address generation logic.

Can the 71V65603S133BGG operate with different supply voltages for core and I/O, and what are the tolerances?

Yes, the 71V65603S133BGG uses separate supplies: VDD (core logic) and VDDQ (I/O drivers), both specified at 3.3 V ±5% (3.135 V to 3.465 V). This dual-supply architecture isolates switching noise and supports mixed-voltage system integration. The absolute maximum ratings permit VDDQ up to VDDQ + 0.5 V, but operation outside the recommended range invalidates timing and DC specifications.