Renesas 71V65603S133BGGI

Overview

71V65603S133BGGI from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz maximum clock frequency, 3.8 ns clock-to-data access time, and zero bus turnaround (ZBT) architecture enabling immediate read-after-write transitions without dead cycles. It operates across industrial temperature range (–40°C to +85°C) and supports pipelined burst reads/writes in linear or interleaved sequences for high-throughput memory subsystems in network packet buffers and baseband processors.

For engineers reviewing the 71V65603S133BGGI datasheet, 71V65603S133BGGI pinout, 71V65603S133BGGI application, or 71V65603S133BGGI equivalent, key selection criteria include its 100-pin TQFP package, synchronous 3.3V I/O and core supply, four-word burst capability with LBO-controlled sequence, individual byte write enables (BW1–BW4), and support for depth expansion via three chip enables (CE1, CE2, CE2).

Technical Context

The 71V65603S133BGGI implements a fully pipelined synchronous interface where address, control, and data signals are registered on the rising edge of CLK. Its ZBT™ architecture eliminates bus turnaround latency by allowing consecutive read and write operations without idle cycles - critical for real-time packet processing and cache coherency protocols.

It integrates an on-chip 4-word burst counter, selectable via ADV/LD and LBO pins, supporting both linear and interleaved addressing. Output enable (OE) is asynchronous, while all other inputs - including R/W, CEN, BWx, and chip enables - are synchronous and sampled on the rising clock edge with setup/hold timing referenced to CLK.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, lead pitch 0.5 mm. Pinout validated per Renesas document 5304 drw 02 (PKG100, 256K × 36 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256P-133JCIN, the 71V65603S133BGGI uniquely delivers zero bus turnaround and hardware burst sequencing in a single 100-pin TQFP package - reducing controller complexity and improving real-time determinism without sacrificing pin count or thermal footprint.

Availability

71V65603S133BGGI is available at Aetrix Electronics and suitable for packet buffering, baseband processing, network switching, and industrial real-time control applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.

Supply support for 71V65603S133BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for automotive, industrial, and communications markets.

The 71V65603S133BGGI belongs to Renesas' ZBT™ synchronous SRAM product line, engineered specifically for high-speed, low-latency memory subsystems in networking, telecom, and real-time embedded systems where deterministic bus turnaround and burst efficiency are critical.

FAQ

What is the memory organization and total capacity of the 71V65603S133BGGI?

The 71V65603S133BGGI is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit wide data paths and is optimized for applications requiring high-bandwidth parallel access, such as packet buffering and DSP cache. The device does not support 512K × 18 mode - that variant is implemented in the 71V65803 family member.

Does the 71V65603S133BGGI support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S133BGGI supports 4-word burst operations in both read and write modes. Burst order is selected via the LBO (Linear/Interleaved Burst Order) pin: LBO = LOW enables linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The ADV/LD pin controls whether the internal burst counter advances (HIGH) or loads a new external address (LOW), enabling seamless burst chaining.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S133BGGI?

The 71V65603S133BGGI uses CE1 and CE2 as active-low enables and CE2 as an active-high enable. All three must be asserted simultaneously (CE1 = LOW, CE2 = LOW, CE2 = HIGH) to select the device. This triple-enable scheme allows hierarchical memory decoding and simple depth expansion - for example, using one CE pair per bank in multi-SRAM configurations without external logic.

How does the ZBT™ (Zero Bus Turnaround) feature improve system performance in the 71V65603S133BGGI?

The ZBT™ feature in the 71V65603S133BGGI eliminates mandatory idle cycles between alternating read and write operations. Unlike conventional SRAMs requiring bus turnaround time, the 71V65603S133BGGI permits immediate transition from write to read (or vice versa) within the same burst sequence - achieving 100% bus utilization and reducing effective latency in real-time packet processing and cache coherency protocols.

What package type and pin count does the 71V65603S133BGGI use, and is it RoHS-compliant?

The 71V65603S133BGGI is packaged in a 100-pin plastic thin quad flatpack (TQFP) per JEDEC MO-145, with 0.5 mm lead pitch and 14 mm × 20 mm body size. The "G" suffix in BGGI denotes green (lead-free, RoHS-compliant) packaging. This package is validated for industrial temperature operation and supports standard reflow soldering profiles.