Renesas 71V65603S133BGGI8

Overview

71V65603S133BGGI8 from Renesas Electronics is a 256K × 36-bit (9 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 133 MHz operation (7.5 ns clock cycle), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write enables (BW1–BW4), and industrial temperature support (–40°C to +85°C). Used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces where dead-cycle elimination is critical.

For engineers reviewing the 71V65603S133BGGI8 datasheet, 71V65603S133BGGI8 pinout, 71V65603S133BGGI8 application, or 71V65603S133BGGI8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100/BGA-119/fBGA-165 package compatibility, 3.3V I/O and core supply tolerance, and industrial-grade thermal stability for telecom infrastructure designs.

Technical Context

The 71V65603S133BGGI8 implements a fully synchronous, clock-edge-triggered architecture with two-cycle data latency: address/control registration on one clock edge, data transfer two cycles later. Its ZBT™ feature eliminates bus turnaround delay by allowing immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a programmable burst counter (linear or interleaved via LBO pin), pipelined input/output registers, and three chip enables (CE1, CE2, CE2) supporting depth expansion. Output enable (OE) remains asynchronous but is internally synchronized in ZBT™ mode, removing external OE timing constraints.

Key Specifications

Pinout & Package

71V65603S133BGGI8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGGI8), with 1.0 mm pitch and 12 mm × 12 mm body size. Pinout conforms to BG119 configuration for 256K × 36-bit variant, including dedicated I/O banks, VDDQ/VDD separation, and static LBO/ZZ controls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256B-133JCIN, the 71V65603S133BGGI8 uniquely delivers ZBT™-enabled zero-turnaround operation in an industrial-grade 119-ball BGA, making it optimal for telecom and embedded control where deterministic burst latency and thermal robustness are mandatory.

Availability

71V65603S133BGGI8 is available at Aetrix Electronics and suitable for high-speed network buffers, packet processing ASIC interfaces, and FPGA-based protocol accelerators requiring stable component supply, long-term industrial qualification, and JEDEC-compliant BGA packaging.

Supply support for 71V65603S133BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S133BGGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency burst memory interfacing in telecom infrastructure, networking ASICs, and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V65603S133BGGI8?

The 71V65603S133BGGI8 is rated for 133 MHz operation, corresponding to a 7.5 ns clock cycle time. This frequency is validated across the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions. The device achieves this speed through fully pipelined synchronous registers and ZBT™ architecture, ensuring reliable timing closure in high-speed FPGA and ASIC designs without added wait states.

Does the 71V65603S133BGGI8 support both linear and interleaved burst modes?

Yes, the 71V65603S133BGGI8 supports both linear and interleaved 4-word burst sequences, selected by the static LBO (Linear/Interleaved Burst Order) pin. When LBO is driven low, the device executes linear bursts (A0, A1, A2, A3); when high, it uses interleaved order (A0, A2, A1, A3). This flexibility allows optimization for sequential data streams or cache-line-aligned access patterns in the 71V65603S133BGGI8's target applications.

How does the ZBTTM feature improve system performance in the 71V65603S133BGGI8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S133BGGI8 eliminates idle cycles between consecutive read and write operations. Unlike conventional SRAMs that require bus release/reacquisition, the 71V65603S133BGGI8 permits immediate transition - e.g., a write followed directly by a read - with no dead cycles. This increases effective bandwidth by up to 25% in burst-intensive traffic, directly benefiting the 71V65603S133BGGI8's use in packet buffering and real-time control loops.

What package type does the 71V65603S133BGGI8 use, and what are its key mechanical attributes?

The 71V65603S133BGGI8 uses a 119-ball fine-pitch BGA (BGGI8), conforming to JEDEC MO-244AB. It measures 12 mm × 12 mm with 0.8 mm ball pitch and 0.4 mm ball diameter. The package supports reflow soldering per J-STD-020, features separate VDD and VDDQ power balls for noise isolation, and is qualified for industrial thermal cycling. This BGA variant replaces legacy TQFP options while maintaining pin-compatible functionality for the 71V65603S133BGGI8.

Can the 71V65603S133BGGI8 operate with asynchronous output enable (OE) control?

Yes, the 71V65603S133BGGI8 retains OE as an asynchronous input, allowing immediate tri-state control of the I/O bus regardless of clock phase. However, its ZBTTM architecture internally synchronizes OE behavior, eliminating the need for precise OE timing relative to CLK. In most designs, OE can be tied low permanently - the 71V65603S133BGGI8's pipelined outputs and burst logic handle data validity automatically, reducing external timing constraints.