Renesas 71V65603S133BGI

Overview

71V65603S133BGI from Renesas Electronics is a 256K × 36-bit (9.44 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 133 MHz clock speed (7.5 ns cycle time), pipelined outputs, and 4-word burst capability. It operates across industrial temperature (–40°C to +85°C), supports individual byte write control (BW1–BW4), and is used in high-speed packet buffering for network switches and routers.

For engineers reviewing the 71V65603S133BGI datasheet, 71V65603S133BGI pinout, 71V65603S133BGI application, or 71V65603S133BGI equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ) support, and burst-mode address sequencing via ADV/LD and LBO pins.

Technical Context

The 71V65603S133BGI implements a fully synchronous, positive-edge-triggered architecture with registered address, control, and data paths. Its ZBT™ feature eliminates dead cycles between read/write transitions by enabling immediate bus turnaround after each access, supported by an internal burst counter and dual-mode (linear/interleaved) burst sequencing controlled by the static LBO pin.

It uses three chip enables (CE1, CE2 low-active; CE2 high-active) for depth expansion, asynchronous OE for output control, and ZZ for sleep mode entry. All synchronous inputs-including R/W, ADV/LD, BWx, and CEN-are sampled on the rising CLK edge, with two-cycle latency between address/control registration and data transfer.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), the 71V65603S133BGI features 100 leads with 0.5 mm pitch, 14 mm × 20 mm body size, and exposed thermal pad (not electrically connected). Pin 1 is located at top-left corner per standard orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZI and AS7C3256A-133JCIN, the 71V65603S133BGI uniquely delivers true zero-turnaround burst operation with integrated counter and selectable sequencing-reducing controller complexity and maximizing bandwidth in pipeline-constrained systems.

Availability

71V65603S133BGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial PLC data logging requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for 71V65603S133BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BGI belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for deterministic, low-latency buffering in networking and communications equipment where bus turnaround overhead must be eliminated.

FAQ

What is the maximum operating frequency and corresponding cycle time for the 71V65603S133BGI?

The 71V65603S133BGI is rated for a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock cycle time (tCYC). This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% supply conditions, with timing validated using JEDEC-standard AC test loads.

Does the 71V65603S133BGI support both linear and interleaved burst modes, and how is the mode selected?

Yes, the 71V65603S133BGI supports both linear and interleaved 4-word burst sequences. The mode is selected statically via the LBO (Linear Burst Order) pin: LBO = LOW configures linear burst (A0, A1, A2, A3), while LBO = HIGH selects interleaved (A0, A1, A2+2, A3+2). LBO must remain stable during device operation.

How does the ZBTTM feature eliminate dead cycles between read and write operations in the 71V65603S133BGI?

The ZBTTM feature in the 71V65603S133BGI removes bus turnaround delays by allowing immediate transition from a read to a write (or vice versa) without inserting idle cycles. This is achieved through internal synchronization of OE and burst counter logic, ensuring the data bus is ready for the next access on the subsequent clock edge-verified in the synchronous truth table and functional timing diagrams.

What are the voltage requirements for VDD and VDDQ on the 71V65603S133BGI, and are they required to ramp simultaneously?

The 71V65603S133BGI requires VDD = 3.3 V ±5% for core logic and VDDQ = 3.3 V ±5% for I/O drivers. Power sequencing is not mandatory; however, no input or I/O pin voltage may exceed VDDQ during power-up ramp, and VDD must reach nominal value before applying signals. Both supplies may ramp independently within specification limits.

Can the 71V65603S133BGI be used in depth-expanded memory configurations, and how many chip enables does it provide?

Yes, the 71V65603S133BGI supports depth expansion using three dedicated chip enables: CE1 and CE2 (active-low), and CE2 (active-high). This configuration allows up to eight devices to be stacked without external decoding logic, with deselect occurring in two clock cycles and data bus tri-stating guaranteed per JEDEC timing specifications.