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Renesas 71V65603S133BGI8
- Part No.:
- 71V65603S133BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V65603S133BGI8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,091
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Product details
Overview
71V65603S133BGI8 from Renesas Electronics is a 256K × 36-bit (9.44 Mbit), 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 133 MHz clock operation (7.5 ns cycle time), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write enables (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). Used in high-speed networking packet buffers and telecom line-card data path memory.
For engineers reviewing the 71V65603S133BGI8 datasheet, 71V65603S133BGI8 pinout, 71V65603S133BGI8 application, or 71V65603S133BGI8 equivalent, key selection criteria include ZBT™ burst timing compatibility, TQFP-100 package footprint, 3.3V I/O and core supply requirements, and support for linear/interleaved burst ordering via LBO pin.
Technical Context
The 71V65603S133BGI8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data inputs are registered on the rising CLK edge. All operations-including load, burst, deselect, and suspend-are governed by ADV/LD, R/W, CEN, and chip enable logic with precise two-cycle latency between address load and data transfer.
ZBT™ operation eliminates dead cycles between read/write transitions using an internally synchronized output buffer enable and pipelined output register. Burst sequencing (linear or interleaved) is controlled statically by LBO, while depth expansion is enabled via three chip enables (CE1, CE2, CE2) supporting multi-SRAM configurations without external glue logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9.44 Mbit); supports high-bandwidth parallel data paths in telecom and packet processing systems |
| Max Clock Frequency | 133 MHz (7.5 ns cycle time); enables sustained 532 MB/s burst throughput with 4-word bursts |
| ZBT™ Latency | No dead cycles between read/write transitions; allows back-to-back memory accesses without bus turnaround penalty |
| Burst Capability | 4-word burst (linear or interleaved); reduces address overhead and improves effective bandwidth in sequential access patterns |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; requires separate core and I/O rail regulation for signal integrity |
| Operating Temperature | –40°C to +85°C (industrial grade); qualified for deployment in base station and industrial control environments |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT reflow and automated optical inspection |
Pinout & Package
71V65603S133BGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, with 0.5 mm pitch. Pin 1 is located at top-left corner per standard orientation marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADV/LD = LOW and chip enabled |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this signal (except OE and ZZ) |
| R/W | Read/Write Control | Synchronous command input determining cycle type; sampled with ADV/LD to initiate load read/write |
| ADV/LD | Burst Address Advance / Load | Controls burst counter increment (HIGH) or external address load (LOW); defines burst initiation and termination |
| LBO | Burst Order Selection | Static input selecting linear (LOW) or interleaved (HIGH) burst sequence; must remain stable during burst operation |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active LOW, CE2 active HIGH); enable depth expansion with no external decoding |
| BW1–BW4 | Byte Write Enables | Four active-LOW signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input and output paths ensure timing closure in high-speed designs |
| OE | Asynchronous Output Enable | Asynchronous control of output drivers; can be tied LOW permanently since internal synchronization eliminates need for OE timing management |
| ZZ | Asynchronous Sleep Mode | Gates internal clock and reduces power consumption; retains memory contents during low-power standby |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive reads and writes, enabling continuous data flow in packet buffering applications |
| Pipelined Outputs with Registered I/O | Two-cycle deterministic latency from address load to valid output data, simplifying timing analysis in high-speed synchronous systems |
| 4-Word Burst with Linear/Interleaved Modes | Reduces address bus traffic by 75% per burst; LBO pin allows runtime selection to match system bus protocol requirements |
| Individual Byte Write Control (BW1–BW4) | Enables partial-word updates without read-modify-write cycles, critical for efficient header manipulation in network processors |
| Three Chip Enables for Depth Expansion | Supports seamless memory capacity scaling (e.g., 256K×72, 256K×144) using identical parts without additional logic |
| Industrial Temperature Range (–40°C to +85°C) | Qualified for deployment in uncontrolled ambient environments such as outdoor wireless infrastructure and factory automation controllers |
Applications
| Packet Buffer Memory | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or SONET frames in network switches and routers before forwarding decisions. IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as first-level packet buffer with ZBT™ enabling immediate write-after-read for header inspection and rewrite. Use Value: 133 MHz operation and 4-word burst deliver 532 MB/s sustained bandwidth, reducing frame drop rates under bursty traffic loads. | Use Scenario: Serving as local cache for DSP-based voice processing or protocol translation in carrier-grade line cards. IC Role / Device Role / Timing Role: Synchronous memory interfacing directly with TI C6000 or Analog Devices SHARC processors via EMIF or custom bus logic. Use Value: Pipelined outputs and deterministic 2-cycle latency simplify timing closure at 133 MHz, eliminating complex clock domain crossing logic. |
| Baseband Processing Buffer | Industrial PLC Data Log |
Use Scenario: Temporary storage of IQ samples between ADC capture and FFT processing in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Dual-port-like behavior achieved via ZBT™ and burst mode, allowing concurrent sample ingestion and algorithm fetch. Use Value: Linear burst mode aligns with FFT memory access patterns, improving cache hit rate and reducing external memory bandwidth demand. | Use Scenario: Logging sensor timestamps and analog measurements in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding critical operational data during brownouts or firmware updates. Use Value: Industrial temperature rating and ZZ sleep mode enable reliable data retention with <100 µA standby current, extending backup battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18-133BZI | 512K × 18 organization (same density), 133 MHz, but uses different burst control (BWS# instead of ADV/LD) and lacks ZBT™ zero-turnaround guarantee | Requires modified controller logic for burst sequencing; not drop-in for ZBT™-optimized designs | Select only if migrating legacy Cypress-based designs where ADV/LD interface is not used |
| AS7C3256B-133JCIN | 256K × 32 organization, 133 MHz, asynchronous OE, no burst counter or ZBT™ feature; simpler timing but lower effective bandwidth | Suitable for non-bursting control-plane memory; cannot replace 71V65603S133BGI8 in data-path burst applications | Choose for cost-sensitive, lower-bandwidth applications where pipelined burst is unnecessary |
Compared with CY7C1362BV18-133BZI and AS7C3256B-133JCIN, the 71V65603S133BGI8 uniquely delivers guaranteed zero bus turnaround and integrated burst counter logic-critical for maintaining full 532 MB/s throughput in real-time packet and sample buffering without controller overhead.
Availability
71V65603S133BGI8 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure hardware, and industrial embedded controllers requiring stable component supply and long-term lifecycle support.
Supply support for 71V65603S133BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V65603S133BGI8 belongs to Renesas' high-performance ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in packet-switched networks and real-time digital signal processing platforms.
FAQ
What is the memory organization and total capacity of the 71V65603S133BGI8?
The 71V65603S133BGI8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.44 Mbit). This configuration supports 36-bit parallel data paths ideal for high-throughput applications like network packet buffering and DSP data memory. The part does not support 512K × 18 mode - that is exclusive to the 71V65803 variant.
Does the 71V65603S133BGI8 support both linear and interleaved burst modes?
Yes, the 71V65603S133BGI8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: LBO = LOW enables linear burst (A0, A1, A2, A3), while LBO = HIGH enables interleaved burst (A0, A1, A2, A3 in bit-reversed order). This selection is static and must remain stable during burst operation.
How does the ZBTTM feature eliminate dead cycles in the 71V65603S133BGI8?
The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S133BGI8 eliminates dead cycles by internally synchronizing the output buffer enable and using pipelined registers for address, control, and data. This allows immediate transition from a read to a write (or vice versa) without bus idle time - a critical advantage in high-speed packet buffering where back-to-back memory accesses are common.
What are the power supply requirements for the 71V65603S133BGI8?
The 71V65603S133BGI8 requires two 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). Both rails must be independently decoupled. The device draws up to 2.0 W maximum power (PT) and supports industrial temperature operation from –40°C to +85°C, with data retention maintained in ZZ sleep mode.
Can the 71V65603S133BGI8 be used with a 100-pin TQFP footprint?
Yes, the 71V65603S133BGI8 is explicitly packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 0.5 mm pitch and 14 mm × 20 mm body size. Pinout matches the PKG100 configuration shown in the Renesas datasheet, including dedicated VDD/VSS/VDDQ distribution and NC/DNU pin assignments.
71V65603S133BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V65603S133BGI8 FAQ
1.How can I place an order for 71V65603S133BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V65603S133BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V65603S133BGI8 reliable?
The price and inventory of 71V65603S133BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V65603S133BGI8 is usually 5 days.
3.What payment methods are accepted for 71V65603S133BGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V65603S133BGI8 transactions.
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4.How is shipping managed for 71V65603S133BGI8?
71V65603S133BGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V65603S133BGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V65603S133BGI8?
For technical support, including 71V65603S133BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V65603S133BGI8 requirements.
6.How does Aetrix verify that 71V65603S133BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V65603S133BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V65603S133BGI8 meets industry standards.
7.What is the process for return or replacement of 71V65603S133BGI8?
All 71V65603S133BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V65603S133BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V65603S133BGI8 part is unused and in its original packaging.
Return procedure for 71V65603S133BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V65603S133BGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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