Renesas 71V65603S133BQG

Overview

71V65603S133BQG from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit organization (9,437,184 bits), supporting 133 MHz operation (7.5 ns clock cycle), zero bus turnaround (ZBT) architecture, pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, single R/W pin, and industrial temperature range (–40°C to +85°C), deployed in high-speed networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71V65603S133BQG datasheet, 71V65603S133BQG pinout, 71V65603S133BQG application, or 71V65603S133BQG equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V I/O supply (VDDQ) decoupling requirements, burst order control via LBO, and chip enable logic using CE1/CE2/CE2 triple-enable scheme.

Technical Context

The 71V65603S133BQG implements a fully synchronous, clock-edge-triggered architecture where address, control, and data inputs are registered on the rising edge of CLK. All operations-including load, burst read/write, and deselect-are synchronized to CLK, with data output valid two cycles after address/control registration.

ZBT functionality eliminates dead cycles between consecutive reads and writes by enabling immediate bus direction reversal without OE control or external timing coordination. The internal burst counter, advanced via ADV/LD and configured for linear or interleaved sequence by LBO, supports deterministic 4-word access patterns critical for cache-line-aligned memory transfers.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout conforms to PKG100 configuration for 256K × 36-bit variant as documented in Renesas datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and AS7C3256P-133JCIN, the 71V65603S133BQG uniquely delivers ZBT timing, integrated burst counter, and triple chip enable-making it irreplaceable in existing ZBT-bus architectures without redesigning timing control logic or bus protocol.

Availability

71V65603S133BQG is available at Aetrix Electronics and suitable for high-speed packet processing, telecom line card memory, and baseband processing applications requiring stable component supply, long-term industrial-grade availability, and JEDEC-compliant TQFP packaging.

Supply support for 71V65603S133BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The 71V65603S133BQG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking and telecom infrastructure where deterministic bus turnaround and burst efficiency are critical.

FAQ

What is the memory organization and total capacity of the 71V65603S133BQG?

The 71V65603S133BQG is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit-wide data buses common in network processors and digital signal controllers, and is distinct from the 512K × 18 variant (71V65803) which shares the same pinout but different internal addressing.

Does the 71V65603S133BQG support burst read and write operations, and how is burst order controlled?

Yes, the 71V65603S133BQG supports 4-word synchronous burst operations in both read and write modes. Burst order is selected via the LBO pin: LBO = LOW configures linear addressing (A0, A1, A2, A3), while LBO = HIGH selects interleaved order (A0, A2, A1, A3). The burst counter advances automatically on each rising CLK edge when ADV/LD = HIGH.

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V65603S133BQG?

The 71V65603S133BQG uses CE1 (active low), CE2 (active low), and CE2 (active high) in combination: device selection requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH. Any deviation initiates a 2-cycle deselect, forcing the data bus into high-impedance state-enabling clean depth expansion across multiple SRAMs without bus contention.

How does the ZBTTM feature eliminate dead cycles in the 71V65603S133BQG?

ZBTTM (Zero Bus Turnaround) in the 71V65603S133BQG removes dead cycles by allowing immediate transition from write to read (or vice versa) without waiting for bus stabilization or asserting OE. The internally synchronized output buffer enables/disables based on internal state, so consecutive read/write commands execute back-to-back with no idle clock cycles.

What package type and pin count does the 71V65603S133BQG use, and is it RoHS compliant?

The 71V65603S133BQG is supplied in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-145AC, 14 mm × 20 mm body size, 0.5 mm lead pitch. Per Renesas documentation, this variant is RoHS-compliant and qualifies as a green part (lead-free, halogen-free), meeting JEDEC J-STD-020 moisture sensitivity level 3.