Renesas 71V65603S133BQG8

Overview

71V65603S133BQG8 from Renesas Electronics is a 3.3V synchronous ZBT™ SRAM with 256K × 36-bit (9,437,184-bit) organization, 133 MHz clock speed (7.5 ns cycle time), zero bus turnaround architecture, and pipelined outputs. It supports 4-word burst (linear or interleaved), individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). It is used in high-speed networking packet buffers and FPGA co-processor memory interfaces.

For engineers reviewing the 71V65603S133BQG8 datasheet, 71V65603S133BQG8 pinout, 71V65603S133BQG8 application, or 71V65603S133BQG8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V I/O and core supply requirements, burst counter behavior under ADV/LD control, and industrial-grade thermal performance.

Technical Context

The 71V65603S133BQG8 implements a fully synchronous, clock-edge-triggered architecture where address, control, and data registers are sampled on the rising edge of CLK. All operations-including load, burst advance, and deselect-are synchronized to CLK, with two-cycle latency between address/control assertion and data transfer.

ZBT™ operation eliminates dead cycles between read/write transitions via internal burst counter management and pipelined output registers. The ADV/LD pin controls whether an external address is loaded (ADV/LD = LOW) or the internal counter is advanced (ADV/LD = HIGH), while LBO selects linear vs. interleaved burst order-both static inputs with no runtime reconfiguration.

Key Specifications

Pinout & Package

71V65603S133BQG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 is located at top-left corner (A1) when marking side faces up and notch oriented left.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133BZXI and IS61WV25636BLL-133TQLI, the 71V65603S133BQG8 uniquely delivers zero bus turnaround, integrated burst counter, and pipelined outputs in a single TQFP-100 package-reducing controller logic, improving bus utilization, and simplifying timing closure in high-speed embedded systems.

Availability

71V65603S133BQG8 is available at Aetrix Electronics and suitable for industrial PLC data logging, automotive ADAS sensor fusion buffers, and high-speed networking packet buffers requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V65603S133BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V65603S133BQG8 belongs to Renesas' ZBT™ SRAM product line, designed specifically for high-performance, low-latency memory subsystems in networking, test equipment, and real-time embedded systems demanding deterministic bus turnaround and burst efficiency.

FAQ

What is the memory organization and total capacity of the 71V65603S133BQG8?

The 71V65603S133BQG8 is organized as 256K × 36 bits, delivering a total capacity of 9,437,184 bits (9.4 Mbit). This configuration supports 36-bit parallel data paths ideal for applications requiring wide bus interfaces such as FPGA co-processors and packet classification engines. The part does not support 512K × 18 mode-only the 256K × 36 configuration is implemented in this specific variant.

Does the 71V65603S133BQG8 support both linear and interleaved burst modes?

Yes, the 71V65603S133BQG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear bursts (A0, A1, A2, A3); when driven HIGH, it performs interleaved bursts (A0, A2, A1, A3). LBO is a static input and must remain stable during burst operation-its state is sampled at initialization and cannot be changed mid-burst.

How does the ZBTTM feature eliminate dead cycles in the 71V65603S133BQG8?

The ZBTTM (Zero Bus Turnaround) feature in the 71V65603S133BQG8 eliminates dead cycles by allowing immediate transition from a write to a read (or vice versa) without bus idle time. This is achieved through internal synchronization of the output buffer enable and pipelined register stages, ensuring that the bus remains active across consecutive accesses. Unlike conventional SRAMs, no wait states or turnaround cycles are inserted-enabling sustained peak bandwidth in burst-intensive applications.

What are the power supply requirements for the 71V65603S133BQG8?

The 71V65603S133BQG8 requires two independent 3.3 V supplies: VDD (core logic, 3.3 V ±5%) and VDDQ (I/O drivers, 3.3 V ±5%). Both supplies must be within specification across the full industrial temperature range (–40°C to +85°C). VSS is the common ground reference. The ZZ pin enables asynchronous sleep mode, reducing active current while maintaining data retention-critical for power-sensitive industrial and automotive deployments.

Can the 71V65603S133BQG8 be used in depth-expanded memory configurations?

Yes, the 71V65603S133BQG8 supports depth expansion using its three chip enable inputs: CE1 and CE2 (active-low) and CE2 (active-high). By combining these enables with address decoding logic, multiple 71V65603S133BQG8 devices can be stacked to create larger memory spaces-for example, two devices yield 512K × 36. The device's synchronous enable architecture ensures clean, glitch-free deselection with guaranteed two-cycle bus tri-state timing upon disable.